BF988
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 08-Jul-99
1 (8)
Document Number 85007
NChannel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF- and UHF- tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High gain
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
1
4
3
2
94 9307
96 12647
BF988 Marking: BF988
Plastic case (TO 50)
1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V
DS
12
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
BF988
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 08-Jul-99
2 (8)
Document Number 85007
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Drain - source
breakdown voltage
I
D
= 10
m
A,
V
G1S
= V
G2S
= 4 V
V
(BR)DS
12
V
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA,
V
G2S
= V
DS
= 0
V
(BR)G1SS
7
14
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA,
V
G1S
= V
DS
= 0
V
(BR)G2SS
7
14
V
Gate 1 - source
leakage current
V
G1S
= 5 V,
V
G2S
= V
DS
= 0
I
G1SS
50
nA
Gate 2 - source
leakage current
V
G2S
= 5 V,
V
G1S
= V
DS
= 0
I
G2SS
50
nA
Drain current
V
DS
= 15 V, V
G1S
= 0,
BF988
I
DSS
4
18
mA
DS
G1S
V
G2S
= 4 V
BF988A
I
DSS
4
10.5
mA
BF988B
I
DSS
9.5
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V,
I
D
= 20
m
A
V
G1S(OFF)
2.5
V
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G1S
= 0,
I
D
= 20
m
A
V
G2S(OFF)
2.0
V
Electrical AC Characteristics
V
DS
= 8 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
21
24
mS
Gate 1 input capacitance
C
issg1
2.1
2.5
pF
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
C
issg2
1.2
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
1.05
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
G
ps
28
dB
G
S
= 3,3 mS, G
L
= 1 mS,
f = 800 MHz
G
ps
16.5
20
dB
AGC range
V
G2S
= 4 to 2 V,
f = 800 MHz
D
G
ps
40
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
F
1
dB
G
S
= 3,3 mS, G
L
= 1 mS,
f = 800 MHz
F
1.5
dB
BF988
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 08-Jul-99
3 (8)
Document Number 85007
Common Source SParameters
V
DS
, = 8 V , V
G2S
= 4 V , Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
S21
S12
S22
I
D
/mA
f/MHz
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
LOG
MAG
ANG
dB
deg
dB
deg
dB
deg
dB
deg
100
0.02
7.8
6.01
168.4
56.27
83.0
0.02
3.6
200
0.10
15.3
5.87
156.3
50.61
76.6
0.06
7.3
300
0.31
22.8
5.69
144.2
47.70
70.9
0.13
10.6
400
0.56
30.2
5.42
132.9
46.19
65.6
0.20
14.2
500
0.87
37.3
5.17
121.5
45.46
60.6
0.28
17.5
600
1.26
44.3
4.85
110.6
45.84
55.4
0.36
20.5
5
700
1.59
50.9
4.54
100.4
47.31
58.6
0.43
23.8
800
2.04
58.0
4.25
90.2
48.19
63.3
0.49
26.8
900
2.42
64.4
4.02
80.6
50.37
81.5
0.52
30.2
1000
2.88
71.4
3.78
70.8
49.48
115.6
0.54
33.4
1100
3.39
78.3
3.42
60.5
47.92
131.7
0.66
36.8
1200
3.94
85.2
3.21
51.6
44.65
153.0
0.66
40.1
1300
4.46
91.8
3.01
42.0
41.76
159.8
0.66
43.9
100
0.02
8.3
7.84
168.5
55.67
83.0
0.04
3.7
200
0.11
16.1
7.70
156.6
50.01
76.4
0.09
7.4
300
0.35
24.0
7.49
144.8
47.20
70.3
0.16
10.8
400
0.62
31.6
7.21
133.6
45.60
65.1
0.23
14.3
500
0.97
39.2
6.93
122.5
44.88
60.0
0.31
17.9
600
1.39
46.4
6.59
111.9
45.25
54.5
0.42
20.9
10
700
1.76
53.2
6.27
101.9
46.51
57.4
0.48
24.1
800
2.25
60.3
5.97
92.1
47.19
61.4
0.55
27.3
900
2.67
67.1
5.71
82.8
49.28
76.0
0.58
30.6
1000
3.16
74.1
5.46
73.3
48.99
107.1
0.60
33.8
1100
3.72
81.1
5.07
63.3
48.03
123.3
0.73
37.2
1200
4.30
88.0
4.85
54.6
45.15
147.6
0.73
40.6
1300
4.87
94.4
4.63
45.4
42.46
157.0
0.73
44.3
100
0.01
8.4
8.62
168.6
55.26
83.0
0.07
3.7
200
0.13
16.4
8.46
156.8
49.61
76.3
0.12
7.5
3000
0.37
24.5
8.26
145.2
46.70
70.3
0.20
11.0
400
0.66
32.3
7.96
134.0
45.10
64.9
0.27
14.4
500
1.02
39.8
7.66
122.9
44.38
59.7
0.36
18.0
600
1.47
47.0
7.33
112.3
44.65
54.3
0.47
20.9
15
700
1.85
54.1
6.98
102.6
45.72
57.0
0.53
24.2
800
2.36
61.3
6.68
92.8
46.29
60.0
0.61
27.4
900
2.80
67.9
6.42
83.7
48.18
71.9
0.64
30.6
1000
3.30
75.0
6.15
74.3
48.49
98.7
0.66
33.9
1100
3.89
82.0
5.75
64.6
47.93
114.8
0.77
37.3
1200
4.49
88.8
5.52
56.0
45.75
141.2
0.79
40.8
1300
5.06
95.2
5.30
46.9
43.05
153.4
0.79
44.5
BF988
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 08-Jul-99
4 (8)
Document Number 85007
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
C )
96 12159
P
T
otal Power Dissipation ( mW
)
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
Drain Source Voltage ( V )
12812
I Drain Current ( mA
)
D
V
G1S
= 0.6V
0.4V
0
0.4V
0.2V
V
G2S
= 4V
0.2V
Figure 2. Drain Current vs.
Drain Source Voltage
0
4
8
12
16
20
0.8
0.4
0.0
0.4
0.8
1.2
V
G1S
Gate 1 Source Voltage ( V )
12816
I Drain Current ( mA
)
D
6V
5V
4V
0
2V
1V
3V
V
DS
= 8V
V
G2S
=1V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
4
8
12
16
20
0.6
0.2
0.2
0.6
1.0
1.4
V
G2S
Gate 2 Source Voltage ( V )
12817
I Drain Current ( mA
)
D
0
2V
1V
3V
V
DS
= 8V
5V
V
G1S
= 1V
4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
2
1.5
1.0
0.5
0.0
0.5
1.0
1.5
V
G1S
Gate 1 Source Voltage ( V )
12813
C Gate 1 Input Capacitance ( pF )
issg1
V
DS
=8V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1
0
1
2
3
4
5
V
G2S
Gate 2 Source Voltage ( V )
12814
C Gate 2 Input Capacitance ( pF )
issg2
V
DS
=8V
V
G1S
=0
f=1MHz
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
BF988
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 4, 08-Jul-99
5 (8)
Document Number 85007
0
0.8
1.6
2.4
3.2
4.0
2
4
6
8
10
12
V
DS
Drain Source Voltage ( V )
12815
C Output Capacitance ( pF )
oss
V
G2S
=4V
V
G1S
=0
f=1MHz
Figure 7. Output Capacitance vs. Drain Source Voltage
50
40
30
20
10
0
10
1
0.5
0.0
0.5
1.0
1.5
V
G1S
Gate 1 Source Voltage ( V )
12818
S
T
ransducer
Gain
(
dB
)
2
21
4V
0
2V
1V
3V
f= 800MHz
0.2V
V
G2S
=0.8V
0.4V
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
I
D
Drain Current ( mA )
12819
V
DS
=8V
f=1MHz
V
G2S
=4V
2V
1V
0
3V
y Forward
T
ransadmittance ( mS )
21s
Figure 9. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
Re (y
11
) ( mS )
12820
Im ( y ) ( mS )
11
V
DS
=8V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
700MHz
400MHz
1000MHz
100MHz
Figure 10. Short Circuit Input Admittance
40
35
30
25
20
15
10
5
0
5
0
4
8
12
16
20
24
28
32
Re (y
21
) ( mS )
12821
Im ( y ) ( mS )
21
V
DS
=8V
V
G2S
=4V
f=100...1300MHz
f=100MHz
1300MHz
1000MHz
400MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 11. Short Circuit Forward Transfer Admittance
0
1
2
3
4
5
6
7
8
9
0
0.25
0.50
0.75
1.00
1.25
1.50
Re (y
22
) ( mS )
12822
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=100...1300MHz
f=1300MHz
1000MHz
400MHz
100MHz
700MHz
Figure 12. Short Circuit Output Admittance
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