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Электронный компонент: BF994

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BF994S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (7)
Document Number 85008
NChannel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
13 579
2
1
4
3
94 9279
BF994 Marking: MG
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
G
2
G
1
D
S
12623
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
BF994S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (7)
Document Number 85008
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Drain - source
breakdown voltage
I
D
= 10
m
A, V
G1S
= V
G2S
= 4 V
V
(BR)DS
20
V
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
6
20
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
20
V
Gate 1 - source
leakage current
V
G1S
= 5 V, V
G2S
= V
DS
= 0
I
G1SS
50
nA
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
50
nA
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V
BF994S
I
DSS
4
18
mA
DS
G1S
G2S
BF994SA
I
DSS
4
10.5
mA
BF994SB
I
DSS
9.5
18
mA
Gate 1 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20
m
A
V
G1S(OFF)
2.5
V
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
m
A
V
G2S(OFF)
2.0
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
15
18.5
mS
Gate 1 input capacitance
C
issg1
2.5
3.0
pF
Gate 2 input capacitance
V
G1S
= 0, V
G2S
= 4 V
C
issg2
1.2
pF
Feedback capacitance
C
rss
25
35
fF
Output capacitance
C
oss
1.0
1.3
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
25
dB
AGC range
V
G2S
= 4 to 2 V, f = 200 MHz
D
G
ps
50
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1.0
dB
BF994S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (7)
Document Number 85008
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
C )
96 12159
P
T
otal Power Dissipation ( mW
)
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
14
16
V
DS
Drain Source Voltage ( V )
12849
I Drain Current ( mA
)
D
V
G1S
= 1V
1V
0
2V
0.5V
V
G2S
= 4V
P
tot
=200mW
0.5V
1.5V
Figure 2. Drain Current vs. Drain Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
1
0.5
0.0
0.5
1.0
1.5
V
G1S
Gate 1 Source Voltage ( V )
12851
I Drain Current ( mA
)
D
V
G2S
= 1V
5V 4V
0
2V
1V
3V
V
DS
= 15V
6V
0.5V
Figure 3. Drain Current vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
1
0.5
0.0
0.5
1.0
1.5
V
G2S
Gate 2 Source Voltage ( V )
12852
I Drain Current ( mA
)
D
V
G1S
= 1V
0
2V
1V
3V
V
DS
= 15V
5V
4V
Figure 4. Drain Current vs. Gate 2 Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
0.5
0.0
0.5
1.0
1.5
I
D
Drain Current ( mA )
12853
C Gate 1 Input Capacitance ( pF )
issg1
V
DS
=15V
V
G2S
=4V
f=1MHz
Figure 5. Gate 1 Input Capacitance vs. Drain Current
0
0.5
1.0
1.5
2.0
2.5
3.0
2
1
0
1
2
3
4
5
V
G2S
Gate 2 Source Voltage ( V )
12854
C Gate 2 Input Capacitance ( pF )
issg2
V
DS
=15V
V
G1S
=0
f=1MHz
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
BF994S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
4 (7)
Document Number 85008
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10 12 14 16 18 20
V
DS
Drain Source Voltage ( V )
12856
C Output Capacitance ( pF )
oss
V
G2S
=4V
f=1MHz
Figure 7. Output Capacitance vs. Drain Source Voltage
60
50
40
30
20
10
0
10
2.0 1.5 1.0 0.5 0.0
0.5
1.0
1.5
2.0
V
G1S
Gate 1 Source Voltage ( V )
12855
S
T
ransducer
Gain
(
dB
)
2
21
4V
0
2V
1V
3V
f= 200MHz
0.2V
V
G2S
=1V
0.8V
0.6V
0.4V
Figure 8. Transducer Gain vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
I
D
Drain Current ( mA )
12850
V
DS
=15V
f=1MHz
4V
2V
3V
1V
0.5V
V
G2S
=0
y Forward
T
ransadmittance ( mS )
21s
Figure 9. Forward Transadmittance vs. Drain Current
0
2
4
6
8
10
12
0
0.5
1.0
1.5
2.0
2.5
3.0
Re (y
11
) ( mS )
12860
Im ( y ) ( mS )
11
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=50...700MHz
f=700MHz
600MHz
500MHz
400MHz
300MHz
200MHz
50MHz
Figure 10. Short Circuit Input Admittance
20
16
12
8
4
0
0
2
4
6
8
10 12 14 16 18 20 22
Re (y
21
) ( mS )
12861
Im ( y ) ( mS )
21
V
DS
=15V
V
G2S
=4V
f=50...700MHz
f=50MHz
500MHz
300MHz
150MHz
700MHz
I
D
=5mA
10mA
20mA
Figure 11. Short Circuit Forward Transfer Admittance
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.4
0.8
1.2
1.6
2.0
Re (y
22
) ( mS )
12862
Im ( y ) ( mS )
22
V
DS
=15V
V
G2S
=4V
I
D
=10mA
f=50...700MHz
f=700MHz
600MHz
500MHz
400MHz
300MHz
200MHz
50MHz
Figure 12. Short Circuit Output Admittance
BF994S
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
5 (7)
Document Number 85008
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V , Z
0
= 50
W
S
11
12 964
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
0.2
0.5
1
2
5
50
700MHz
200
450
Figure 13. Input reflection coefficient
S
21
12 966
0
90
180
90
1
2
150
120
60
30
120
150
60
30
50
700MHz
200
450
Figure 14. Forward transmission coefficient
S
12
12 965
0
90
180
90
0.08
0.16
150
120
60
30
120
150
60
30
50
700MHz
200
Figure 15. Reverse transmission coefficient
S
22
12 967
j0.2
j0.5
j
j2
j5
0
j0.2
j0.5
j
j2
j5
1
0.2
0.5
1
2
5
50
700MHz
Figure 16. Output reflection coefficient