ChipFind - документация

Электронный компонент: BFP193TRW

Скачать:  PDF   ZIP
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
1 (6)
Document Number 85015
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain applications such as power
amplifiers up to 2 GHz and for linear broadband ampli-
fiers.
Features
D
Low noise figure
D
High transition frequency f
T
= 8 GHz
D
Excellent large signal behaviour
2
1
3
13 653
4
13 566
BFP193TW Marking: W19
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13 566
13 654
BFP193TRW Marking: W91
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 579
2
1
4
3
94 9279
BFP193T Marking: 193
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
2 (6)
Document Number 85015
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
12
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
80
mA
Total power dissipation
T
amb
45
C
P
tot
420
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thJA
250
K/W
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
3 (6)
Document Number 85015
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector cut-off current
V
CE
= 20 V, V
BE
= 0
I
CES
100
m
A
Collector-base cut-off current
V
CB
= 10 V, I
E
= 0
I
CBO
100
nA
Emitter-base cut-off current
V
EB
= 1 V, I
C
= 0
I
EBO
1
m
A
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
V
(BR)CEO
12
V
Collector-emitter saturation voltage
I
C
= 50 mA, I
B
=5 mA
V
CEsat
0.1
0.5
V
DC forward current transfer ratio
V
CE
= 8 V, I
C
= 30 mA
h
FE
50
100
150
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
V
CE
= 8 V, I
C
= 50 mA, f = 1 GHz
f
T
6
8
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
0.5
0.9
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
0.25
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
1.6
pF
Noise figure
V
CE
= 8 V, I
C
= 10 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
, f = 900 MHz
F
1.2
dB
V
CE
= 8 V, I
C
= 10 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
, f = 2 GHz
F
2.1
dB
Power gain
V
CE
= 8 V, I
C
= 30 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
, f = 900 MHz
G
pe
18
dB
V
CE
= 8 V, I
C
= 30 mA, Z
S
= Z
Sopt
,
Z
L
= 50
W
, f = 2 GHz
G
pe
12
dB
Transducer gain
V
CE
= 8 V, I
C
= 30 mA, Z
0
= 50
W
,
f = 900 MHz
S
21e
2
15
dB
V
CE
= 8 V, I
C
= 30 mA, Z
0
= 50
W
,
f = 2 GHz
S
21e
2
9
dB
Third order intercept point at
output
V
CE
= 8 V, I
C
= 50 mA, f = 900 MHz
IP
3
33
dBm
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
4 (6)
Document Number 85015
Dimensions of BFP193TW in mm
96 12237
Dimensions of BFP193TRW in mm
96 12238
BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 1, 20-Jan-99
5 (6)
Document Number 85015
Dimensions of BFP193T in mm
96 12240