BFR90
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
1 (9)
Document Number 85028
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
94 9308
1
3
2
BFR90 Marking: BFR90
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
13623
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
15
V
Emitter-base voltage
V
EBO
2
V
Collector current
I
C
30
mA
Total power dissipation
T
amb
60
C
P
tot
300
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
R
thJA
300
K/W
BFR90
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
2 (9)
Document Number 85028
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector cut-off current
V
CE
= 20 V, V
BE
= 0
I
CES
100
m
A
Collector-base cut-off current
V
CB
= 20 V, I
E
= 0
I
CBO
100
nA
Emitter-base cut-off current
V
EB
= 2 V, I
C
= 0
I
EBO
10
m
A
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
V
(BR)CEO
15
V
DC forward current transfer ratio
V
CE
= 10 V, I
C
= 14 mA
h
FE
25
50
150
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
V
CE
= 10 V, I
C
= 14 mA, f = 500 MHz
f
T
5
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
0.35
pF
Collector-emitter
capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
0.3
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
1.3
pF
Noise figure
V
CE
= 10 V, I
C
= 2 mA, f = 500 MHz,
Z
S
= 50
W
F
2.2
dB
Power gain
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
,
f = 500 MHz
G
pe
19.5
dB
V
CE
= 10 V, I
C
= 14 mA, Z
L
= Z
Lopt
,
f = 800 MHz
G
pe
14
dB
Linear output voltage two
tone intermodulation test
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
W
V
1
= V
2
100
mV
Third order intercept point
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
IP
3
23
dBm
BFR90
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (9)
Document Number 85028
Common Emitter SParameters
Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
S21
S12
S22
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
deg
deg
deg
deg
100
0.82
27.8
6.31
155.8
0.03
73.8
0.95
10.2
300
0.59
72.7
4.66
121.6
0.06
54.0
0.80
22.1
500
0.41
107.7
3.49
99.9
0.08
46.7
0.70
27.0
800
0.30
154.9
2.474
78.0
0.10
44.9
0.63
32.3
2
1000
0.29
176.7
2.08
66.9
0.11
46.2
0.60
36.3
1200
0.30
153.2
1.80
56.4
0.12
47.6
0.57
40.6
1500
0.35
126.8
1.50
43.1
0.15
48.9
0.54
47.6
1800
0.41
108.7
1.32
31.2
0.18
49.2
0.50
55.5
2000
0.45
99.1
1.22
24.4
0.20
48.0
0.48
61.1
100
0.65
39.9
12.44
145.2
0.02
70.3
0.88
16.2
300
0.35
91.8
7.26
108.3
0.05
58.7
0.65
25.4
500
0.22
130.4
4.85
90.2
0.07
58.5
0.57
26.9
800
0.16
177.4
3.22
72.6
0.10
58.2
0.52
30.6
5
5
1000
0.18
150.9
2.66
63.4
0.12
57.3
0.50
34.5
1200
0.21
131.6
2.28
54.4
0.14
55.5
0.47
38.6
1500
0.27
112.7
1.89
42.8
0.18
51.9
0.44
45.2
1800
0.33
100.1
1.65
31.8
0.21
48.2
0.40
52.1
2000
0.37
92.8
1.53
25.2
0.24
45.0
0.38
56.9
100
0.45
54.6
18.55
133.7
0.02
70.4
0.79
21.5
300
0.19
112.5
8.73
99.4
0.04
66.6
0.55
24.7
500
0.12
156.4
5.54
84.5
0.07
66.8
0.49
24.9
800
0.12
148.7
3.60
69.5
0.11
64.0
0.46
28.7
10
1000
0.15
129.3
2.96
61.3
0.13
61.4
0.44
32.8
1200
0.18
117.0
2.51
53.0
0.16
58.0
0.42
37.1
1500
0.24
104.4
2.08
42.1
0.19
52.8
0.38
43.5
1800
0.30
94.9
1.82
31.8
0.23
47.7
0.35
49.9
2000
0.34
89.5
1.67
25.4
0.25
43.7
0.32
54.5
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