VN2010L/BS107
Vishay Siliconix
Document Number: 70215
S-04279--Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
VN2010L
10 @ V
GS
= 4.5 V
0.8 to 1.8
0.19
BS107
200
28 @ V
GS
= 2.8 V
0.8 to 3
0.12
D
Low On-Resistance: 6
W
D
Secondary Breakdown Free: 220 V
D
Low Power/Voltage Driven
D
Low Input and Output Leakage
D
Excellent Thermal Stability
D
Low Offset Voltage
D
Full-Voltage Operation
D
Easily Driven Without Buffer
D
Low Error Voltage
D
No High-Temperature
"Run-Away"
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
VN2010L
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
BS107
Device Marking
Front View
"S" VN
2010L
xxyy
"S" = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
"S" BS
107
xxyy
"S" = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VN2010L
BS107
Unit
Drain-Source Voltage
V
DS
200
200
Gate-Source Voltage
V
GS
"
30
"
25
V
_
T
A
= 25
_
C
0.19
0.12
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
0.12
A
Pulsed Drain Current
a
I
DM
0.8
T
A
= 25
_
C
0.8
0.5
Power Dissipation
T
A
= 100
_
C
P
D
0.32
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
250
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
VN2010L/BS107
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70215
S-04279--Rev. C, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VN2010L
BS107
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100
m
A
220
200
200
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.2
0.8
1.8
0.8
3
V
V
DS
= 0 V, V
GS
=
"
20 V
"
10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
15 V
"
10
nA
Drain Leakage Current
I
DSV
V
DS
= 70 V, V
GS
= 0.2 V
1
V
DS
= 130 V, V
GS
= 0 V
0.03
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
1
m
A
T
J
= 125
_
C
100
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
0.7
0.1
A
V
GS
= 2.8 V, I
D
= 0.02 A
6
28
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.05 A
6
10
W
T
J
= 125
_
C
11
20
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 0.1 A
180
125
Common Source
Output Conductance
b
g
os
V
DS
= 15 V, I
D
= 0.05 A
0.15
mS
Dynamic
Input Capacitance
C
iss
35
60
Output Capacitance
C
oss
V
DS
=25 V, V
GS
= 0 V, f = 1 MHz
9
30
pF
Reverse Transfer Capacitance
C
rss
1
15
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 250
W
^
5
20
Turn-Off Time
t
OFF
I
D
^
0.1 A, V
GEN
= 10 V
R
G
= 25
W
21
30
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDQ20
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
VN2010L/BS107
Vishay Siliconix
Document Number: 70215
S-04279--Rev. C, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
28
0
4
8
12
16
20
24
20
16
0
12
8
4
I
D
= 500 mA
50 mA
250 mA
12.5
10.0
7.5
0
0
0.2
1.0
5.0
2.5
0.4
0.6
0.8
V
GS
= 10 V
0.5
0
1
2
3
4
5
0.4
0.3
0.2
0.1
0
V
GS
= 10 V
5 V
4 V
3 V
2 V
6 V
50
0
0.4
40
30
20
10
0
0.8
1.2
1.6
2.0
V
GS
= 2.2 V
2.0 V
1.8 V
1.6 V
1.4 V
0.6 V
1.2 V
1.0 V
500
400
300
0
5
200
100
0
1
2
3
4
25
_
C
125
_
C
V
DS
= 15 V
T
J
= 55
_
C
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 4.5 V
10 mA
I
D
Drain Current (A)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
I
D
= 50 mA
VN2010L/BS107
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70215
S-04279--Rev. C, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
10
1
0.01
0
0.4
0.1
0.8
1.2
1.6
2.0
V
DS
= 5 V
T
J
= 150
_
C
55
_
C
25
_
C
60
50
40
0
0
10
50
30
20
20
30
40
10
C
oss
C
iss
C
rss
V
GS
= 0 V
f
= 1 MHz
15.0
12.5
10.0
0
0
250
1250
7.5
5.0
500
750
1000
2.5
I
D
= 0.1 A
160 V
V
DS
= 100 V
0.01
0.1
1.0
100
10
1
50
20
5
2
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
t
d(off)
t
d(on)
t
r
t
f
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
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