VISHAY
BYM36
Document Number 86012
Rev. 1.6, 12-Aug-04
Vishay Semiconductors
www.vishay.com
1
949588
Fast Avalanche Sinterglass Diode
Features
Glass passivated
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Applications
Switched mode power supplies
High-frequency inverter circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Part
Type differentiation
Package
BYM36A
V
R
= 200 V; I
FAV
= 3 A
SOD-64
BYM36B
V
R
= 400 V; I
FAV
= 3 A
SOD-64
BYM36C
V
R
= 600 V; I
FAV
= 3 A
SOD-64
BYM36D
V
R
= 800 V; I
FAV
= 2.9 A
SOD-64
BYM36E
V
R
= 1000 V; I
FAV
= 2.9 A
SOD-64
Parameter
Test condition
Part
Symbol
Value
Unit
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
BYM36A
V
R
= V
RRM
200
V
BYM36B
V
R
= V
RRM
400
V
BYM36C
V
R
= V
RRM
600
V
BYM36D
V
R
= V
RRM
800
V
BYM36E
V
R
= V
RRM
1000
V
Peak forward surge current
t
p
= 10 ms, half sinewave
I
FSM
65
A
Average forward current
BYM36A-BYM36C
I
FAV
3
A
BYM36D-BYM36E
I
FAV
2.9
A
Non repetitive reverse
avalanche energy
I
(BR)R
= 1 A, inductive load
E
R
20
mJ
Junction and storage
temperature range
T
j
= T
stg
- 55 to + 175
C
www.vishay.com
2
Document Number 86012
Rev. 1.6, 12-Aug-04
VISHAY
BYM36
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
l = 10 mm, T
L
= constant
R
thJA
25
K/W
on PC Board with spacing
\re\n25 mm
R
thJA
70
K/W
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 3 A
BYM36A-
BYM36C
V
F
1.6
V
BYM36D-
BYM36E
V
F
1.78
V
I
F
= 3 A, T
j
= 175 C
BYM36A-
BYM36C
V
F
1.22
V
BYM36D-
BYM36E
V
F
1.28
V
Reverse current
V
R
= V
RRM
I
R
5
A
V
R
= V
RRM
, T
j
= 150 C
I
R
100
A
Reverse breakdown voltage
I
R
= 100
A
BYM36A
V
(BR)R
300
V
BYM36B
V
(BR)R
500
V
BYM36C
V
(BR)R
700
V
BYM36D
V
(BR)R
900
V
BYM36E
V
(BR)R
1100
V
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYM36A-
BYM36C
t
rr
100
ns
BYM36D-
BYM36E
t
rr
150
ns
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
0
40
80
120
160
0
100
200
300
400
600
P
-
Maximum
Reverse
Power
Dissipation
(mW
R
T
j
Junction Temperature (C )
200
95 9705
500 R
thJA
= 25 K/W
R
thJA
= 70 K/W
200V
400V
600V
800V
1000V
Figure 2. Max. Average Forward Current vs. Ambient Temperature
0
0
1
2
3
4
I
-
Average
Forward
Curren
t(A)
FAV
T
amb
- Ambient Temperature (
C )
95 9706
40
80
120
160
200
R
thJA
= 25 K/W
R
thJA
=70 K/W
V
R
= V
RRM
Half Sinewave
BYM36A, BYM36B, BYM36C
VISHAY
BYM36
Document Number 86012
Rev. 1.6, 12-Aug-04
Vishay Semiconductors
www.vishay.com
3
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Max. Reverse Current vs. Junction Temperature
Figure 5. Max. Forward Current vs. Forward Voltage
0
0
1
2
3
4
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
95 9707
40
80
120
160
200
R
thJA
= 25 K/W
R
thJA
= 70 K/W
V
R
=V
RRM
Half Sinewave
BYM36D, BYM36E
0
40
80
120
160
0.1
1
10
100
1000
200
95 9704
V
R
= V
RRM
T
j
- Junction T emperature (C )
I
-
Reverse
Current
(
A)
R
0
1
2
3
0.001
0.01
0.1
1
10
100
4
95 9708
I
Forward
Curren
t(A)
F
V
F
Forward Voltage ( V )
BYM36A, BYM36B, BYM36C
T
j
= 25
C
T
j
= 175
C
Figure 6. Max. Forward Current vs. Forward Voltage
Figure 7. Diode Capacitance vs. Reverse Voltage
0
1
2
3
0.001
0.01
0.1
1
10
100
4
95 9709
I
Forward
Curren
t(A)
F
V
F
Forward Voltage ( V )
BYM36D, BYM36E
T
j
= 25
C
T
j
= 175
C
0
10
20
30
40
50
60
70
80
90
0.1
1
10
100
V
R
Reverse Voltage ( V )
16302
C
Diode
Capacitance
(
p
F
)
D
f =1 MHz
VISHAY
BYM36
Document Number 86012
Rev. 1.6, 12-Aug-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
PDF 
ZIP