BYT108/200/400
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (5)
Document Number 86019
Ultra Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
Epitaxial planar
D
Ultra fast forward recovery time
D
Ultra fast reverse recovery time
D
Low reverse current
D
Very good reverse current stability at high tem-
perature
D
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
14282
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYT108/200
V
R
=V
RRM
200
V
g
=Repetitive peak reverse voltage
BYT108/400
V
R
=V
RRM
400
V
Peak forward surge current
t
p
=10ms,
half sinewave
I
FSM
100
A
Repetitive peak forward current
I
FRM
40
A
Average forward current
I
FAV
8
A
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
2.4
K/W
Junction ambient
R
thJA
85
K/W
BYT108/200/400
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (5)
Document Number 86019
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=8A
V
F
1.3
V
g
I
F
=8A, T
j
=100
C
V
F
1.2
V
Reverse current
V
R
=V
RRM
I
R
5
m
A
V
R
=V
RRM
, T
j
=150
C
I
R
1
mA
Forward recovery time
I
F
=8A, di
F
/dt
x
50A/
m
s
t
fr
350
ns
Turn on transient peak
voltage
F
,
F
m
V
FP
4
V
Reverse recovery
I
F
=8A, di
F
/dt
x
50A/
m
s,
I
RM
5
A
y
characteristics
F
,
F
m
,
V
Batt
=200V
t
IRM
100
ns
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
BYT108/200
t
rr
35
ns
y
F
R
R
BYT108/400
t
rr
50
ns
Reverse recovery current
I
F
=1A, di
F
/dt
x
50A/
m
s,
V
Batt
=200V
I
RM
1.9
A
Reverse recovery time
I
F
=1A, di
F
/dt
x
50A/
m
s,
V
Batt
=200V,i
R
=0.25xI
RM
t
rr
58
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
m
0
40
80
120
160
0.01
0.1
1
10
1000
I Reverse Current (
A
)
R
T
j
Junction Temperature (
C )
200
94 9502
100
V
R
=V
RRM
Figure 1. Typ. Reverse Current vs. Junction Temperature
0
0
2
4
6
8
10
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9501
40
80
120
160
200
R
thJA
=10K/W
R
thJA
=5K/W
R
thJA
=85K/W
R
thJC
=2.4K/W
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
BYT108/200/400
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
3 (5)
Document Number 86019
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
3.0
94 9507
Figure 3. Typ. Forward Current vs. Forward Voltage
0
50
100
200
300
0
40
80
120
160
t Reverse Recovery
T
ime for I ( ns )
IRM
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
94 9506
250
150
RM
I
F
= 8A
T
C
=100
C
Figure 4. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
0
I Reverse Recovery Current (
A
)
RM
94 9504
5
10
15
20
0
50
100
200
300
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
250
150
I
F
= 8A
T
C
=100
C
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
0
50
100
150
200
250
94 9505
0
50
100
200
300
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
250
150
t Reverse Recovery
T
ime ( ns )
rr
I
F
= 8A
T
C
=100
C
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
0
100
150
200
300
0
200
400
600
800
350
94 9503
Q Reverse Recovery Char
ge ( nC )
rr
dI
F
/dt Forward Current Rate of Change ( A/
ms )
50
250
I
F
= 8A
T
C
=100
C
Figure 7. Reverse Recovery Charge vs.
Forward Current Rate of Change
BYT108/200/400
Vishay Telefunken
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FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
5 (5)
Document Number 86019
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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