BYT115/200/400
Vishay Telefunken
Rev. A2, 24-Jun-98
1 (5)
Ultra Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
Epitaxial planar
D
Ultra fast forward recovery time
D
Ultra fast reverse recovery time
D
Low reverse current
D
Very good reverse current stability at high tem-
perature
D
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
14282
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYT115/200
V
R
=V
RRM
200
V
g
=Repetitive peak reverse voltage
BYT115/400
V
R
=V
RRM
400
V
Peak forward surge current
t
p
=10ms
I
FSM
100
A
Repetitive peak forward current
I
FRM
30
A
Average forward current
I
FAV
15
A
Junction and storage
temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
1.75
K/W
Junction ambient
R
thJA
85
K/W
BYT115/200/400
Vishay Telefunken
Rev. A2, 24-Jun-98
2 (5)
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol Min
Typ
Max
Unit
Forward voltage
I
F
=15A
V
F
1.3
V
g
I
F
=15A, T
j
=100
C
V
F
1.2
V
Reverse current
V
R
=V
RRM
I
R
2
m
A
V
R
=V
RRM
; T
j
=100
C
I
R
0.2
mA
Forward recovery time
I
F
=15A, di
F
/dt
x
50A/
m
s
t
fr
350
ns
Turn on transient peak
voltage
V
FP
4
V
Reverse recovery
I
F
=15A, di
F
/dt
x
150A/
m
s,
I
RM
12
A
y
characteristics
F
F
m
V
Batt
=200V
t
IRM
75
ns
Reverse recovery time
I
F
=15A, di
F
/dt
x
150A/
m
s,
V
Batt
=200V
t
rr
140
ns
I
F
=0.5A, I
R
=1A, i
R
=0.25A
BYT115/200
t
rr
35
ns
F
R
R
BYT115/400
t
rr
50
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
40
80
120
160
0.1
1
10
100
1000
T
j
Junction Temperature (
C )
200
94 9510
m
I Reverse Current (
A
)
R
V
R
= 200/400 V
Figure 1. Typ. Reverse Current vs. Junction Temperature
0
0
4
8
12
16
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9508
40
80
120
160
200
R
thJA
=10K/W
R
thJA
=5K/W
R
thJA
=85K/W
R
thJC
=1.75K/W
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
BYT115/200/400
Vishay Telefunken
Rev. A2, 24-Jun-98
3 (5)
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
3.0
94 9509
Figure 3. Typ. Forward Current vs. Forward Voltage
0
0
200
400
600
800
1000
94 9515
3
6
12
18
21
15
9
I
F
Forward Current ( A )
Q Reverse Recovery Char
ge ( nC )
rr
dI
F
/dt=150A/
ms
Figure 4. Reverse Recovery Charge vs.
Forward Current
0
50
100
200
300
0
40
80
120
160
t Reverse Recovery
T
ime for I ( ns )
IRM
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
94 9514
250
150
RM
Figure 5. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
0
I Reverse Recovery Current (
A
)
RM
94 9513
5
10
15
20
0
50
100
200
300
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
250
150
Figure 6. Reverse Recovery Current vs.
Forward Current Rate of Change
0
50
100
150
200
250
94 9512
0
50
100
200
300
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
250
150
t Reverse Recovery
T
ime ( ns )
rr
Figure 7. Reverse Recovery Time vs.
Forward Current Rate of Change
0
200
400
600
800
1200
Q Reverse Recovery Char
ge ( nC )
rr
94 9511
1000
0
50
100
200
300
dI
F
/dt Forward Current Rate of Change ( A/
ms )
350
250
150
Figure 8. Reverse Recovery Charge vs.
Forward Current Rate of Change
BYT115/200/400
Vishay Telefunken
Rev. A2, 24-Jun-98
5 (5)
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systems
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the environment.
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as ozone depleting substances ( ODSs ).
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of ODSs listed in the following documents.
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substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
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unauthorized use.
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