BYT86
Vishay Telefunken
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Rev. 2, 24-Jun-98
1 (4)
Document Number 86036
Ultra Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
High voltage
D
High current
D
Ultra fast forward recovery time
D
Ultra fast reverse recovery time
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber
diode in motor control circuits
14282
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYT86600
V
R
=V
RRM
600
V
g
=Repetitive peak reverse voltage
BYT86800
V
R
=V
RRM
800
V
BYT861000 V
R
=V
RRM
1000
V
Peak forward surge current
t
p
= 10ms
half sinewave
I
FSM
90
A
Repetitive peak forward current
I
FRM
25
A
Average forward current
I
FAV
8
A
Junction and storage temperature range
T
j
=T
stg
55...+150
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
2.4
K/W
BYT86
Vishay Telefunken
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Rev. 2, 24-Jun-98
2 (4)
Document Number 86036
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol Min
Typ
Max Unit
Forward voltage
I
F
=8A
V
F
1.8
V
g
I
F
=8A, T
j
=100
C
V
F
1.8
V
Reverse current
V
R
=V
RRM
I
R
10
m
A
V
R
=V
RRM
, T
j
=100
C
I
R
0.2
mA
Forward recovery time
I
F
=8A, di
F
/dt
x
50A/
m
s
t
fr
350
ns
Turn on transient
peak voltage
F
,
F
m
V
FP
7
V
Reverse recovery
I
F
=8A, di
F
/dt =100A/
m
s, V
Batt
=200V
I
RM
12
A
y
characteristics
F
F
m
Batt
t
IRM
110
ns
Reverse recovery time
I
F
=8A, di
F
/dt =100A/
m
s, V
Batt
=200V
t
rr
150
ns
y
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
80
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
40
80
120
160
0.1
1
10
100
1000
T
j
Junction Temperature (
C )
200
94 9483
m
I Reverse Current (
A
)
R
V
R
= V
R RM
Figure 1. Typ. Reverse Current vs. Junction Temperature
0
0
2
4
6
8
10
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9481
40
80
120
160
200
R
thJA
=10K/W
R
thJA
=5K/W
R
thJA
=85K/W
R
thJC
=2.4K/W
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
3.0
94 9482
T
Case
= 25
C
Figure 3. Typ. Forward Current vs. Forward Voltage
0
50
100
150
0
30
60
90
120
150
200
94 9484
t Reverse Recovery
T
ime for I ( ns )
IRM
dI
F
/dt Forward Current Rate of Change ( A/
ms )
RM
I
F
= 8A
T
C
=25
C
V
Batt
=200V
Figure 4. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
BYT86
Vishay Telefunken
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Rev. 2, 24-Jun-98
3 (4)
Document Number 86036
0
50
100
150
0
3
6
9
12
15
200
94 9485
I Reverse Recovery Current (
A
)
RM
dI
F
/dt Forward Current Rate of Change ( A/
ms )
I
F
= 8A
T
C
=25
C
V
Batt
=200V
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
0
50
100
150
0
50
100
150
200
250
200
94 9486
dI
F
/dt Forward Current Rate of Change ( A/
ms )
t Reverse Recovery
T
ime ( ns )
rr
I
F
= 8A
T
C
=25
C
V
Batt
=200V
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
Dimensions in mm
14276
BYT86
Vishay Telefunken
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Rev. 2, 24-Jun-98
4 (4)
Document Number 86036
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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