BYW82...BYW86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
1 (4)
Document Number 86051
Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Controlled avalanche characteristics
D
Low reverse current
D
High surge current loading
D
Electrically equivalent diodes:
BYW82 1N5624 BYW83 1N5625
BYW84 1N5626 BYW85 1N5627
Applications
Rectifier, general purpose
94 9588
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Reverse voltage
BYW82
V
R
=V
RRM
200
V
g
=Repetitive peak reverse voltage
BYW83
V
R
=V
RRM
400
V
BYW84
V
R
=V
RRM
600
V
BYW85
V
R
=V
RRM
800
V
BYW86
V
R
=V
RRM
1000
V
Peak forward surge current
t
p
=10ms, half sinewave
I
FSM
100
A
Repetitive peak forward current
I
FRM
18
A
Average forward current
T
amb
x
65
C
I
FAV
3
A
Pulse avalanche peak power
t
p
=20
m
s, half sinewave,
T
j
=175
C
P
R
1000
W
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
I
(BR)R
=1A, T
j
=175
C
E
R
20
mJ
i
2
*trating
i
2
*t
40
A
2
*s
Junction and storage
temperature range
T
j
=T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=10mm, T
L
=constant
R
thJA
25
K/W
on PC board with spacing 37.5mm
R
thJA
70
K/W
BYW82...BYW86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
2 (4)
Document Number 86051
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=3A
V
F
1.0
V
Reverse current
V
R
=V
RRM
I
R
0.1
1
m
A
V
R
=V
RRM
, T
j
=100
C
I
R
5
10
m
A
Breakdown voltage
I
R
=100
m
A, t
p
/T=0.01, t
p
=0.3ms
V
(BR)
1600
V
Diode capacitance
V
R
=0, f=0.47MHz
C
D
65
100
pF
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
t
rr
2
4
m
s
y
I
F
=1A, d
i
/d
t
=5A/
m
s, V
R
=50V
t
rr
3
6
m
s
Reverse recovery charge
I
F
=1A, d
i
/d
t
=5A/
m
s
Q
rr
6
10
m
C
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
5
10
15
25
0
10
20
30
40
R
Therm. Resist. Junction /
Ambient ( K/W
)
thJA
l Lead Length ( mm )
30
94 9563
20
l
l
T
L
=constant
Figure 1. Max. Thermal Resistance vs. Lead Length
0
0
0.4
0.8
1.2
1.6
2.0
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9565
40
80
120
160
200
V
R
= V
R RM
f=1kHz
R
thJA
=70K/W
PCB
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0
0
1
2
3
4
I
A
verage
Forward
Current
(
A
)
FA
V
T
amb
Ambient Temperature (
C )
94 9564
40
80
120
160
200
V
R
= V
R RM
f=1kHz
R
thJA
=25K/W
L=10mm
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
0
40
80
120
160
0.1
1
10
100
1000
T
j
Junction Temperature (
C )
200
94 9566
m
I Reverse Current (
A
)
R
Scattering Limit
V
R
= V
R RM
Figure 4. Reverse Current vs. Junction Temperature
BYW82...BYW86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
3 (4)
Document Number 86051
0
0.6
1.2
1.8
2.4
0.01
0.1
1
10
100
I Forward Current (
A
)
F
V
F
Forward Voltage ( V )
3.0
94 9567
T
amb
= 25
C
T
amb
= 175
C
Scattering Limit
Figure 5. Max. Forward Current vs. Forward Voltage
0
20
40
60
80
0.1
1
10
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 9569
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
Z
Thermal Resistance for Pulse Cond. (K/W)
thp
t
p
Pulse Length ( s )
94 9568
I
FRM
Repetitive Peak
Forward Current ( A )
10
4
10
3
10
2
10
1
10
0
10
1
10
1
10
0
10
1
t
p
/T=0.05
V
R RM
=1000V
R
thJA
=70K/W
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.01
T
amb
= 25
C
45
C
70
C
100
C
60
C
t
p
/T=0.02
Figure 7. Thermal Response
Dimensions in mm
Cathode Identification
4.3 max.
1.35 max.
4.2 max.
Sintered Glass Case
SOD 64
Weight max. 1.0 g
technical drawings
according to DIN
specifications
94 9587
26 min.
26 min.
BYW82...BYW86
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 24-Jun-98
4 (4)
Document Number 86051
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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