Top View
S
2
V+
NC
S
3
IN
3
D
3
D
4
IN
4
IN
2
D
2
D
1
IN
1
S
1
V-
GND
S
4
1
2
3
4
5
6
8
7
16 15 14 13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
IN
1
IN
2
D
1
D
2
S
1
S
2
V-
V+
GND
NC
S
4
S
3
D
4
D
3
IN
4
IN
3
Dual-In-Line and SOIC
DG441B
DG441B
QFN16 (4x4 mm)
DG441B/442B
Vishay Siliconix
New Product
Document Number: 72625
S-32553--Rev. A, 15-Dec-03
www.vishay.com
1
Improved Quad SPST CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 45 W
D Low Power Consumption: 1.0 mW
D Fast Switching Action--t
ON
: 120 ns
D Low Charge Injection--Q: -1 pC
D TTL/CMOS-Compatible Logic
D Single Supply Capability
D Less Signal Errors and Distortion
D Reduced Power Supply Requirements
D Faster Throughput
D Reduced Pedestal Errors
D Simple Interfacing
D Audio Switching
D Data Acquisition
D Sample-and-Hold Circuits
D Communication Systems
D Automatic Test Equipment
D Medical Instruments
DESCRIPTION
The DG441B/442B are monolithic quad analog switches
designed to provide high speed, low error switching of analog
and audio signals. The DG441B/442B are upgrades to the
original DG441/442.
Combing low on-resistance (45 W, typ.) with high speed
(t
ON
120 ns, typ.), the DG441B/442B are ideally suited for
Data Acquisition, Communication Systems, Automatic Test
Equipment, or Medical Instrumentation. Charge injection has
been minimized on the drain for use in sample-and-hold
circuits.
The DG441B/442B are built using Vishay Siliconix's
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both directions
and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
DG441B
DG442B
0
ON
OFF
1
OFF
ON
Logic "0" v 0.8 V
Logic "1" w 2.4 V
ORDERING INFORMATION
Temp Range
Package
Part Number
16 Pin Plastic DIP
DG441BDJ
16-Pin Plastic DIP
DG442BDJ
40 to 85_C
16 Pin Narrow SOIC
DG441BDY
-40 to 85_C
16-Pin Narrow SOIC
DG442BDY
16 Pin QFN 4x4 mm
DG441BDN
16-Pin QFN 4x4 mm
DG442BDN
DG441B/442B
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72625
S-32553--Rev. A, 15-Dec-03
ABSOLUTE MAXIMUM RATINGS
V+ to V-
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V-
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
(V-) -2 V to (V+) +2 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current, S or D (Pulsed 1 ms, 10% duty cycle)
100 mA
. . . . . . . . . . . . . . . . . .
Storage Temperature
-65 to 125_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIP
c
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow Body SOIC
d
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
QFN-16
d
850 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6 mW/_C above 75_C
d.
Derate 12 mW/_C above 25_C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 15 V, V- = -15 V, V
L
= 5 V. V
IN
= 2.4 V,
0.8 V
f
Temp
b
Min
d
Typ
c
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
-15
15
V
Drain-Source
On-Resistance
r
DS(on)
I
S
= 1 mA, V
D
= #10 V
Room
Full
45
80
95
W
On-Resistance Match Between
Channels
e
Dr
DS(on)
I
S
= 1 mA, V
D
= "10 V
Room
Full
2
4
5
W
Switch Off
I
S(off)
V
D
= "14 V V
S
= #14 V
Room
Full
-0.5
-5
"0.01
0.5
5
Switch Off
Leakage Current
I
D(off)
V
D
= "14 V, V
S
= #14 V
Room
Full
-0.5
-5
"0.01
0.5
5
nA
Channel On
Leakage Current
I
D(on)
V
S
= V
D
=
"14 V
Room
Full
-0.5
-10
#0.02
0.5
10
Digital Control
Input Voltage Low
V
INL
Full
0.8
V
Input Voltage High
V
INH
Full
2.4
V
Input Current V
IN
Low
I
INL
V
IN
under test = 0.8 V, All Other = 2.4 V
Full
-1
-0.01
1
mA
Input Current V
IN
High
I
INH
V
IN
under test = 2.4 V, All Other = 0.8 V
Full
-1
0.01
1
mA
Dynamic Characteristics
Turn-On Time
t
ON
R
L
= 1 kW
, C
L
= 35 pF
Room
120
220
Turn-Off Time
t
OFF
R
L
= 1 kW
, C
L
= 35 pF
V
S
= 10 V, See Figure 2
Room
65
120
ns
Charge Injection
e
Q
C
L
= 1 nF, V
S
= 0 V, V
gen
= 0 V, R
gen
= 0 W
Room
-1
pC
Off Isolation
e
OIRR
R
L
= 50 W
, C
L
= 15 pF, V
S
= 1 V
RMS
Room
90
dB
Crosstalke (Channel-to-Channel)
X
TALK
R
L
= 50 W
, C
L
= 15 pF, V
S
= 1 V
RMS
f = 100 kHz
Room
95
dB
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room
4
Drain Off Capacitance
e
C
D(off)
f = 1 MHz
Room
4
pF
Channel On Capacitance
e
C
D(on)
V
S
= V
D
= 0 V, f = 1 MHz
Room
16
p
Power Supplies
Positive Supply Current
I+
V+ = 16.5 V, V- = -16.5 V
Room
Full
1
5
mA
Negative Supply Current
I-
V+ = 16.5 V, V- = -16.5 V
V
IN
= 0 or 5 V
Room
Full
-1
-5
mA
DG441B/442B
Vishay Siliconix
New Product
Document Number: 72625
S-32553--Rev. A, 15-Dec-03
www.vishay.com
3
SPECIFICATIONS
a
FOR SINGLE SUPPLY
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Parameter
Symbol
V+ = 12 V, V- = 0 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Min
d
Typ
c
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
0
12
V
Drain-Source
On-Resistance
r
DS(on)
I
S
= 1 mA, V
D
= 3 V, 8 V
Room
Full
90
160
200
W
Dynamic Characteristics
Turn-On Time
t
ON
R
L
= 1 kW
, C
L
= 35 pF
Room
120
300
ns
Turn-Off Time
t
OFF
R
L
= 1 kW
, C
L
= 35 pF
V
S
= 8 V, See Figure 2
Room
60
200
ns
Charge Injection
Q
C
L
= 1 nF V
gen
= 6 V, R
gen
= 0 W
Room
4
pC
Power Supplies
Positive Supply Current
I+
V
IN
= 0 or 5 V
Room
Full
1
5
mA
Negative Supply Current
I-
V
IN
= 0 or 5 V
Room
Full
-1
-5
mA
Notes:
a.
Refer to PROCESS OPTION FLOWCHART.
b.
Room = 25_C, Full = as determined by the operating temperature suffix.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.
Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
IN
X
5 V Reg
Level
Shift/
Drive
V+
GND
V-
V-
V+
DG441B/442B
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72625
S-32553--Rev. A, 15-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-20 -16 -12 -8
-4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
150
175
200
225
0
0.5
1
1.5
2
2.5
r DS(on)
()
W
"5 V
r
DS(on)
vs. V
D
and Power Supply Voltages
V
D
- Drain Voltage (V)
"10 V
"15 V
"20 V
r DS(on)
()
W
r
DS(on)
vs. V
D
and Temperature
V
D
- Drain Voltage (V)
125_C
85_C
25_C
-55_C
V+ = 15 V
V- = -15 V
r DS(on)
()
W
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V
D
- Drain Voltage (V)
V
TH
()
V
Input Switching Threshold vs. Supply Voltage
4
6
8
10
12
14
16
18
20
V+ = 5 V
7 V
10 V
12 V
15 V
30
20
10
60
70
80
90
100
250
I
S(off)
, I
D(off)
I
D(on)
-20
-15
-10
-5
0
5
10
15
20
80
60
40
20
0
-20
-40
-60
-80
Temperature (_C)
Leakage Currents vs. Analog Voltage
I S,
I D
-
Current (pA)
-55
25
45
5
-15
65
1 nA
100 pA
10 pA
-35
1 pA
85
105 125
V+ = 15 V
V- = -15 V
V
S,
V
D
= "14 V
I
S(off)
, I
D(off)
Temperature (_C)
Leakage Currents vs. Temperature
-
Current
I
, I
SD
V+ Positive Supply (V)
V+ = 22 V
V- = -22 V
T
A
= 25_C
DG441B/442B
Vishay Siliconix
New Product
Document Number: 72625
S-32553--Rev. A, 15-Dec-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
12
14
16
18
20
100
200
300
400
500
V- = 0 V
t
on
t
off
Switching T
ime
(ns)
Switching Time vs. Single Supply Voltage
0
100
200
300
400
t
on
t
off
Switching T
ime
(ns)
Switching Time vs. Power Supply Voltage
0
"4
"8
"12
"16
"20
-15
-10
-5
0
5
10
15
30
20
10
0
-10
-20
-30
V+ = 15 V
V- = -15 V
V+ = 12 V
V- = 0 V
Q
-
Charge (pC)
Q
S,
Q
D
- Charge Injection vs. Analog Voltage
10 k
100 k
1 M
10 M
40
50
60
70
80
90
100
110
120
Off Isolation vs. Frequency
OIRR (dB)
V+ = 15 V
V- = -15 V
R
L
= 50 W
1 k
10 k
100 k
1 M
4
3
2
1
0
I+
-
Supply Current (mA)
Supply Current vs. Switching Frequency
V+ - Positive Supply (V)
V+, V- Positive and Negative Supplies (V)
V
ANALOG
- Analog Voltage (V)
f - Frequency (Hz)
f - Frequency (Hz)
PDF 
ZIP