FGP30B thru FGP30D
Document Number 88878
10-Aug-05
Vishay Semiconductors
www.vishay.com
1
Pat
ente
d*
DO-204AC (DO-15)
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
N
ew P
ro
duct
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
3.0 A
V
RRM
100 V to 200 V
I
FSM
125 A
t
rr
35 ns
V
F
0.95 V
I
R
5.0 A
T
j
max.
175 C
Features
Cavity-free glass-passivated junction
Ideal for automated placement
Ultrafast reverse recovery time
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: GP20, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
T
A
= 25 C unless otherwise specified
Parameter
Symbol
FGP30B
FGP30C
FGP30D
Unit
Maximum repetitive peak reverse voltage
V
RRM
100
150
200
V
Maximum RMS voltage
V
RMS
70
105
140
V
Maximum DC blocking voltage
V
DC
100
150
200
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 25 C
I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125 A
Operating junction and storage temperature range
T
J
, T
STG
- 65 to + 175
C
www.vishay.com
2
Document Number 88878
10-Aug-05
FGP30B thru FGP30D
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
T
A
= 25 C unless otherwise specified
Notes:
(1) Thermal resistance from juction to ambient at 0.375" (9.5 mm) lead length and mounted
on P.C.B. with 1.1 x 1.1 (30 x 30 mm) copper pads.
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks.
Ratings and Characteristics Curves
(T
A
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
FGP30B
FGP30C
FGP30D
Unit
Maximum instantaneous
forward voltage
at 3.0 A
(1)
V
F
0.95 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 C
T
A
= 100 C
I
R
5.0
50
A
Maximum reverse recovery
time
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 ns
Typical junction capacitance
at 4.0 V, 1 MHz
C
J
70 pF
Parameter
Symbol
FGP30B
FGP30C
FGP30D
Unit
Typical thermal resistance
(1,2)
R
JA
R
JL
55
20
C/W
Figure 1. Maximum Forward Current Derating Curve
3,5
3
2,5
2
1,5
1
0,5
0
0
25
50
75
100
125
150
175
A
v
er
age F
o
r
w
ard Rectified C
u
rrent (A)
Ambient Temperature (C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 H
Z
1
10
100
25
50
75
100
125
150
0
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
FGP30B thru FGP30D
Document Number 88878
10-Aug-05
Vishay Semiconductors
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
j
= 175 C
T
j
= 25 C
T
j
= 150 C
T
j
= 125 C
0,2
0,4
0,8
1
1,2
0,6
100
10
1
0,1
0,01
Instantaneo
u
s F
o
r
w
ard C
u
rrent (A)
Instantaneous Forward Voltage (V)
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage C
u
rrent (
A)
T
j
= 175 C
T
j
= 150 C
T
j
= 25 C
100
10
1
0,1
0,01
0,001
T
j
= 125 C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
J
u
nction Capacitance (pF)
1000
100
10
1
0,1
1
10
100
1
10
100
tp-Pulse Duration (sec)
T
r
ansient
Ther
mal Impedance (C/
W
)
0,01
0,1
1
10
100
0.034 (0.86)
0.028 (0.71)
Dia.
0.140 (3.6)
0.104 (2.6)
Dia.
0.230 (5.8)
0.300 (7.6)
1.0 (25.4)
min.
1.0 (25.4)
min.
DO-204AC (DO-15)
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