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Электронный компонент: H11C6

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H11C4/ H11C5/ H11C6
Document Number 83610
Rev. 1.6, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
1
2
3
6
5
4
G
A
C
A
C
NC
i179006
Pb
Pb-free
e3
Optocoupler, PhotoSCR Output, 400 V V
RM
, 5 A surge current
Features
Turn on current (I
FT
), 5.0 mA typical
Gate trigger current (I
GT
), 20 mA typical
Surge anode current, 5.0 A
Blocking voltage, 400 V gate trigger voltage (V
GT
),
0.6 V typical
Isolation test voltage 5300 V
RMS
Solid State reliability
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
Description
The H11C4/ H11C5/ H11C6 are optically coupled
SCRs with a gallium arsenide infrared emitter and a
silicon photo SCR sensor. Switching can be achieved
while maintaining a high degree of isolation between
triggering and load circuits. These optocouplers can
be used in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
The H11C4 and H11C5 are identical and have a max-
imum turn-on-current of 11 mA. The H11C6 has a
maximum of 14 mA.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
H11C4
I
FT
11 mA, DIP-6
H11C5
I
FT
11 mA, DIP-6
H11C6
I
FT
14 mA, DIP-6
H11C4-X006
I
FT
11 mA, DIP-6 400 mil (option 6)
H11C6-X009
I
FT
14 mA, SMD-6 (option 9)
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
V
RM
6.0
V
Forward continuous current
I
F
60
mA
Peak forward current
1.0 ms, 1 % Duty Cycle
I
FM
3.0
A
Power dissipation
P
diss
100
mW
Derate linearly from 25 C
1.33
mW/C
www.vishay.com
2
Document Number 83610
Rev. 1.6, 26-Oct-04
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Reverse gate voltage
V
RG
6.0
V
Anode voltage
DC or AC peak
V
A
400
V
RMS forward current
I
FRMS
300
mA
Surge anode current
10 ms duration
I
AS
5.0
A
Peak forward current
100
s, 1% Duty Cycle
I
FM
10
A
Surge gate current
5.0 ms duration
I
GS
200
mA
Power dissipation
P
diss
1000
mW
Derate linearly from 25C
13.3
mW/C
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage (between
emitter and detector referred to
standard climate 23 C/ 50 %
RH, DIN 50014)
V
ISO
5300
V
RMS
Creepage
7.0
mm
Clearance
7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Total package dissipation
P
tot
400
mW
Derate linearly from 25 C
5.5
mW/C
Operating temperature range
T
amb
- 55 to + 100
C
Storage temperature range
T
stg
- 55 to + 150
C
Lead soldering time at 260 C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 10 mA
V
F
1.2
1.5
V
Reverse current
V
R
= 3.0 V
I
R
10
A
Capacitance
V
R
= 0, f = 1.0 MHz
C
O
50
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward blocking voltage
R
GK
= 10 K
, T
A
= 100 C,
I
d
= 150
A
V
DM
400
V
Reverse blocking voltage
R
GK
= 10 K
, T
A
= 100 C,
I
d
= 150
A
V
DM
400
V
On-state voltage
I
T
= 300 mA
V
t
1.1
1.3
V
Holding current
R
GK
= 27 K
, V
FX
= 50 V
I
H
500
A
H11C4/ H11C5/ H11C6
Document Number 83610
Rev. 1.6, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Coupler
Package Dimensions in Inches (mm)
Gate trigger voltage
V
FX
= 100 V, R
GK
= 27 k
,
R
L
=10 K
V
GT
0.6
1.0
V
Forward leakage current
R
GK
= 10 K
, V
RX
= 400 V,
I
F
= 0, T
A
= 100 C
I
R
150
A
Reverse leakage current
R
GK
= 10 K
, V
RX
= 400 V,
I
F
= 0, T
A
=100 C
I
R
150
A
Gate trigger current
V
FX
= 100 V, R
RG
= 27 K
,
R
L
= 10 K
I
GT
20
50
A
Capacitance, Anode to gate
V = 0, f = 1.0 MHz
20
pF
Capacitance, Gate to cathode
V = 0, f = 1.0 MHz
350
pF
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Turn-on current
V
DM
= 50 V, R
GK
= 10 K
H11C4
I
FT
20
mA
H11C5
I
FT
20
mA
H11C6
I
FT
30
mA
V
DM
= 100 V, R
GK
= 27 K
H11C4
I
FT
5.0
11
mA
H11C5
I
FT
5.0
11
mA
H11C6
I
FT
7.0
14
mA
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
i178004
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
39
.300.347
(7.628.81)
4
typ.
ISO Method A
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4
Document Number 83610
Rev. 1.6, 26-Oct-04
H11C4/ H11C5/ H11C6
Vishay Semiconductors
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
.307 (7.8)
.291 (7.4)
.407 (10.36)
.391 (9.96)
Option 6
18493
min.
.315 (8.00)
.020 (.51)
.040 (1.02)
.300 (7.62)
ref.
.375 (9.53)
.395 (10.03)
.012 (.30) typ.
.0040 (.102)
.0098 (.249)
15 max.
Option 9
H11C4/ H11C5/ H11C6
Document Number 83610
Rev. 1.6, 26-Oct-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423