K3010P(G) Series
Vishay Telefunken
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Document Number 83504
Rev. A4, 13Sep99
1 (9)
Optocoupler with Phototriac Output
Description
The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emit-
ting diode in a 6-lead plastic dual inline package. The
elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance be-
tween input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced
isolation):
D
For appl. class I IV at mains voltage
300 V
D
For appl. class I III at mains voltage
600 V
according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid
state relays, microwaves.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14827
6
5
4
2
3
1
A (+)
C ()
nc
95 10812
~
~
Note: Pin 5 must not be connected
Order Instruction
Ordering Code
CTR Ranking
Remarks
K3010P/ K3010PG
1)
< 15 mA
K3011P/ K3011PG
1)
< 10 mA
K3012P/ K3012PG
1)
< 5 mA
1)
G = Leadform 10.16 mm; G is not marked on the body
K3010P(G) Series
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2 (9)
Document Number 83504
Rev. A4, 13Sep99
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12398
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
D
Isolation test voltage (partial discharge test
voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D
Thickness through insulation
0.75 mm
General features:
D
Isolation materials according to UL 94-VO
D
Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
I
FT
offered in 3 groups
D
Coupling System C
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
80
mA
Forward surge current
t
p
10
m
s
I
FSM
3
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
100
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Off state output terminal voltage
V
DRM
250
V
On state RMS current
I
TRMS
100
mA
Peak surge current, non-repetitive t
p
10 ms
I
TMS
1.5
A
Power dissipation
T
amb
25
C
P
V
300
mW
Junction temperature
T
j
100
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
V
IO
1)
3.75
kV
Total power dissipation
T
amb
25
C
P
tot
350
mW
Ambient temperature range
T
amb
40 to +85
C
Storage temperature range
T
stg
55 to +100
C
Soldering temperature
2 mm from case, t
10 s
T
sd
260
C
1)
Related to standard climate 23/50 DIN 50014
K3010P(G) Series
Vishay Telefunken
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FaxBack +1-408-970-5600
Document Number 83504
Rev. A4, 13Sep99
3 (9)
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward peak off-state
voltage (repetitive)
I
DRM
= 100 nA
V
DRM
1)
250
V
Peak on-state voltage
I
TM
= 100 mA
V
TM
1.5
3
V
Critical rate of rise of
I
FT
= 0, I
FT
= 30 mA
(dv/dt)
cr
10
V/
m
s
off-state voltage
FT
FT
(dv/dt)
crq
0.1
0.2
V/
m
s
1)
Test voltage must be applied within dv/dt ratings
Coupler
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
Emitting diode trigger
V
S
= 3 V, R
L
= 150
W
K3010P(G)
I
FT
8
15
mA
g
gg
current
S
L
K3011P(G)
I
FT
5
10
mA
K3012P(G)
I
FT
2
5
mA
Holding current
I
F
= 10 mA, V
S
3 V
I
H
100
m
A
Note: I
FT
is defined as a minimum trigger current
V~
R
S
95 10813
Test condition:
dv/dt
cr
V
S
= 2/3 V
DRM
(Sine wave)
R
L
= 33 k
dv/dt
crq
V
eff
= 30 V
(Sine wave)
R
L
= 2 k
I
FT
R
L
Figure 1. Test circuit for dv/dt
cr
and dv/dt
crp
K3010P(G) Series
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4 (9)
Document Number 83504
Rev. A4, 13Sep99
I
F
y
I
FT
95 10814
dv/dt
cr
Highest value of the "rate of rise of off-state voltage" which does not cause any switching from the
off-state to the on-state
dv/dt
crq
Highest value of the "rate of rise of communicating voltage" which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from I
FT
to zero
I
F
= 0
dv / dt
crq
dv / dt
cr
Figure 2.
M
95 10815
270
TTL
+5 V
0.1
F
VAC ~
Galvanical separation
Figure 3. Motor control circuit
K3010P(G) Series
Vishay Telefunken
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FaxBack +1-408-970-5600
Document Number 83504
Rev. A4, 13Sep99
5 (9)
Maximum Safety Ratings
(according to VDE 0884) see figure 4
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I
si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T
amb
25
C
P
si
600
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V
IOTM
6
kV
Safety temperature
T
si
150
C
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage
100%, t
test
= 1 s
V
pd
1.6
kV
g
g
Routine test
test
V
IOTM
6
kV
Partial discharge test voltage
Lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 5)
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100
C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 150
C
(construction test only)
R
IO
10
9
W
0
75
150
225
300
375
450
525
600
675
0
25
50
75
100
125
150
T
amb
(
C )
95 10925
P
si
(mW)
I
si
(mA)
Figure 4. Derating diagram
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
Figure 5. Test pulse diagram for sample test according to
DIN VDE 0884