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Электронный компонент: LS4448

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LS4148.LS4448
Vishay Telefunken
Rev. 3, 01-Apr-99
1 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85561
Silicon Epitaxial Planar Diodes
Features
D
Electrical data identical with the devices 1N4148
and 1N4448 respectively
D
Quadro Melf package
Applications
Extreme fast switches
96 12009
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
100
V
Reverse voltage
V
R
75
V
Peak forward surge current
t
p
=1
m
s
I
FSM
2
A
Repetitive peak forward current
I
FRM
500
mA
Forward current
I
F
300
mA
Average forward current
V
R
=0
I
FAV
150
mA
Power dissipation
P
V
500
mW
Junction temperature
T
j
175
C
Storage temperature range
T
stg
65...+175
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm
R
thJA
500
K/W
LS4148.LS4448
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85561
Electrical Characteristics
T
j
= 25
_
C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
I
F
=5mA
LS4448
V
F
0.62
0.72
V
g
I
F
=50mA
LS4148
V
F
0.86
1
V
I
F
=100mA
LS4448
V
F
0.93
1
V
Reverse current
V
R
=20V
I
R
25
nA
V
R
=20V, T
j
=150
C
I
R
50
m
A
V
R
=75V
I
R
5
m
A
Breakdown voltage
I
R
=100
m
A, t
p
/T=0.01,
t
p
=0.3ms
V
(BR)
100
V
Diode capacitance
V
R
=0, f=1MHz, V
HF
=50mV
C
D
4
pF
Rectification efficiency
V
HF
=2V, f=100MHz
h
r
45
%
Reverse recovery time
I
F
=I
R
=10mA, i
R
=1mA
t
rr
8
ns
y
I
F
=10mA, V
R
=6V, i
R
=0.1xI
R
,
R
L
=100
W
t
rr
4
ns
Characteristics (T
j
= 25
_
C unless otherwise specified)
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I Forward Current ( mA
)
F
V
F
Forward Voltage ( V )
2.0
94 9096
LL 4148
Scattering Limit
T
j
= 25
C
Figure 1. Forward Current vs. Forward Voltage
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I Forward Current ( mA
)
F
V
F
Forward Voltage ( V )
2.0
94 9097
LL 4448
Scattering Limit
T
j
= 25
C
Figure 2. Forward Current vs. Forward Voltage
LS4148.LS4448
Vishay Telefunken
Rev. 3, 01-Apr-99
3 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85561
1
10
1
10
100
1000
I Reverse Current ( nA
)
R
V
R
Reverse Voltage ( V )
100
94 9098
Scattering Limit
T
j
= 25
C
Figure 3. Reverse Current vs. Reverse Voltage
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 9099
2.5
f = 1 MHz
T
j
= 25
C
Figure 4. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
96 12071
LS4148.LS4448
Vishay Telefunken
Rev. 3, 01-Apr-99
4 (4)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85561
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423