S186P
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81536
Silicon PIN Photodiode
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
GaAs or GaAs on GaAlAs IR emitters (
l
p
y
900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle
Features
D
Fast response times
D
Small junction capacitance
D
High radiant sensitivity
D
Large radiant sensitive area A=7.5 mm
2
D
Wide angle of half sensitivity
=
65
D
Plastic case with IR filter (950 mm)
D
Suitable for near infrared radiation
94 8490
Applications
High speed photo detector
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
60
V
Power Dissipation
T
amb
x
25
C
P
V
215
mW
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x
5 s
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
S186P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81536
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
I
R
= 100
m
A, E = 0
V
(BR)
60
V
Reverse Dark Current
V
R
= 10 V, E = 0
I
ro
2
30
nA
Diode Capacitance
V
R
= 0 V, f = 1 MHz, E = 0
C
D
70
pF
V
R
= 3 V, f = 1 MHz, E = 0
C
D
25
40
pF
Open Circuit Voltage
E
e
= 1 mW/cm
2
,
l
= 950 nm
V
o
350
mV
Short Circuit Current
E
e
= 1 mW/cm
2
,
l
= 950 nm
I
k
38
m
A
Reverse Light Current
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
I
ra
43
45
m
A
Angle of Half Sensitivity
65
deg
Wavelength of Peak Sensitivity
l
p
950
nm
Range of Spectral Bandwidth
l
0.5
870...1050
nm
Noise Equivalent Power
V
R
= 20 V,
l
= 950 nm
NEP
4x10
14
W/
Hz
Rise Time
V
R
= 10 V, R
L
= 1 k
W
,
l
= 820 nm
t
r
100
ns
Fall Time
V
R
= 10 V, R
L
= 1 k
W
,
l
= 820 nm
t
f
100
ns
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
20
40
60
80
1
10
100
1000
I Reverse Dark Current ( nA
)
ro
T
amb
Ambient Temperature (
C )
100
94 8403
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
40
60
80
0.6
0.8
1.0
1.2
1.4
I Relative Reverse Light Current
ra rel
T
amb
Ambient Temperature (
C )
100
94 8409
V
R
=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
S186P
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81536
0.01
0.1
1
0.1
1
10
100
1000
I Reverse Light Current (
A
)
ra
E
e
Irradiance ( mW / cm
2
)
10
94 8414
m
V
R
=5V
l=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
1
10
100
V
R
Reverse Voltage ( V )
100
94 8415
I Reverse Light Current (
A
)
ra
m
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
l=950nm
Figure 4. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C Diode Capacitance ( pF )
D
V
R
Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 5. Diode Capacitance vs. Reverse Voltage
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) Relative Spectral Sensitivity
rel
l Wavelength ( nm )
1150
94 8408
1.0
l
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S Relative Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
S186P
Vishay Telefunken
5 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81536
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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