Vishay General Semiconductor
S1A thru S1M
Document Number 88711
30-Jun-06
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 C
Solder Dip 260 C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of
power supplies, inverters, converters and free-
wheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V to 1000 V
I
FSM
40 A, 30 A
E
AS
5 mJ
I
R
1.0 A, 5.0 A
V
F
1.1 V
T
j
max.
150 C
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (see Fig.1)
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 C, I
AS
= 1 A, L = 10 mH
E
AS
5
mJ
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150
C
www.vishay.com
2
Document Number 88711
30-Jun-06
Vishay General Semiconductor
S1A thru S1M
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
at 1.0 A
V
F
1.1 V
Maximum DC reverse current
at Rated DC blocking voltage
T
A
= 25 C
T
A
= 125 C
I
R
1.0 5.0
A
50
Typical reverse recovery time
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
1.8 s
Typical junction capacitance
at 4.0 V, 1 MHz
C
J
12 pF
THERMAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Typical thermal resistance
(1)
R
JA
R
JL
75
27
85
30
C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-E3/61T
0.064
61T
1800
7" Diameter Plastic Tape & Reel
S1J-E3/5AT
0.064
5AT
7500
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0
0.6
0.8
1.2
1.0
0
20
40
60
80
100
120
140
160
A
v
er
age
F
or
w
ard
C
u
rrent
(A)
Lead Temperature (C)
0.4
0.2
Resistive or Inductive Load
S1(K,M)
S1(A-J)
0.2 x 0.2" (5.0 x 5.0 mm)
Thick Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
100
1
100
10
S1(K,M)
S1(A-J)
T
L
= 110 C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
eak F
o
r
w
ard S
u
rge C
u
rrent (A)
Document Number 88711
30-Jun-06
www.vishay.com
3
S1A thru S1M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.4
0.8
1.2
1.6
2.0
0.01
0.1
10
1
80
Instantaneo
u
sF
o
r
w
ard
C
u
rrent
(A)
Instantaneous Forward Voltage (V)
T
j
= 25 C
Pulse Width = 300 s
1 % Duty Cycle
0
20
60
40
100
80
0.01
0.001
0.1
10
1
T
j
= 125 C
T
j
= 25 C
T
j
= 75 C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Re ve rse Vo ltage (V)
J
u
nction Capacitance (pF)
0.1
0.01 1
1
0 100
100
10
1
T
j
= 25 C
f = 1.0 MHz
V
sig
= 50 mVp-p
t, Pulse Duration (sec.)
T
r
ansient
T
her
mal
Impedance
(
C
/
W
)
0.1
0.01
1
10
100
100
1000
10
1
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
S1(K,M)
S1(A-J)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
0.074 MAX.
(1.88 MAX.)
0.208
(5.28) REF
0.066 MIN.
(1.68 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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