VISHAY
S330D
Document Number 86053
Rev. 1.5, 11-Aug-04
Vishay Semiconductors
www.vishay.com
1
949539
Standard Avalanche Sinterglass Diode
Features
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
Hermetically sealed package
Applications
High voltage
Power supplies
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Part
Type differentiation
Package
S330D
V
R
= 1000 V; I
FAV
= 2 A
SOD-57
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
V
R
= V
RRM
1000
V
Peak forward surge current
t
p
= 10 ms, half-sinewave
I
FSM
50
A
Average forward current
T
amb
= 50 C, l = 10 mm
I
FAV
2.0
A
Max. pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R
= 1 A, inductive load
E
R
20
mJ
Junction and storage
temperature range
T
j
= T
stg
- 55 to + 175
C
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
Lead length l = 10 mm,
T
L
= constant
R
thJA
45
K/W
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2
Document Number 86053
Rev. 1.5, 11-Aug-04
VISHAY
S330D
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 1 A
V
F
1
V
I
F
= 10 A
V
F
1.65
V
Reverse current
V
R
= V
RRM
I
R
5
A
V
R
= V
RRM
, T
j
= 100 C
I
R
50
A
Reverse breakdown voltage
I
R
= 100
A
V
(BR)R
1300
V
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
t
rr
4
s
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Max. Average Forward Current vs. Ambient Temperature
0
0
20
40
60
80
120
R
Therm.Resist.
Junction
/
Ambient
(
K/W
)
thJA
l Lead Length ( mm )
94 9090
5
10
15
25
30
20
100
l
l
T
L
=constant
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80 100 120 140 160 180
T
amb
Ambient Temperature(C )
I
A
verage
Forward
Current
(
A
)
FA
V
R
thJA
=45K/W
l=10mm
17212
Figure 3. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
(
A)
25
50
75
100
125
150
1
10
100
1000
10000
175
17213
I
R
T (C)
J
(V)
C
(
pF)
0.1
1
10
100
10
5
15
20
25
30
35
0
40
D
V
R
17214
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4
Document Number 86053
Rev. 1.5, 11-Aug-04
VISHAY
S330D
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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