S350P
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead centertocenter spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
l
p
> 850nm.
Features
D
High radiant sensitivity
D
Miniature T
flat plastic package with IR filter
D
Very wide angle of half sensitivity
=
40
D
Suitable for near infrared radiation
D
Suitable for 0.1" (2.54 mm) centertocenter
spacing
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
32
V
Emitter Collector Voltage
V
ECO
5
V
Collector Current
I
C
50
mA
Peak Collector Current
t
p
/T = 0.5, t
p
x
10 ms
I
CM
100
mA
Total Power Dissipation
T
amb
x
55
C
P
tot
100
mW
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x
3 s
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
450
K/W
S350P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
Basic Characteristics
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector Emitter Breakdown
Voltage
I
C
= 1 mA
V
(BR)CE
O
32
V
Collector Dark Current
V
CE
= 20 V, E = 0
I
CEO
2
200
nA
Collector Emitter Capacitance
V
CE
= 5 V, f = 1 MHz, E=0
C
CEO
6
pF
Collector Light Current
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
CE
= 5 V
I
ca
0.2
1
mA
Angle of Half Sensitivity
40
deg
Wavelength of Peak Sensitivity
l
p
925
nm
Range of Spectral Bandwidth
l
0.5
860...990
nm
Collector Emitter Saturation
Voltage
E
e
= 1 mW/cm
2
,
l
= 950 nm, I
C
= 0.1 mA
V
CEsat
0.3
V
TurnOn Time
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
W
t
on
6
m
s
TurnOff Time
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
W
t
off
5
m
s
CutOff Frequency
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
W
f
c
110
kHz
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
20
40
60
80
0
25
50
75
100
125
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
100
94 8308
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8260
20
I Collector Dark Current ( nA
)
CEO
100
40
60
80
T
amb
Ambient Temperature (
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
S350P
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
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FaxBack +1-408-970-5600
Document Number 81543
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I Relative Collector Current
ca rel
20
40
60
80
T
amb
Ambient Temperature (
C )
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
l=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.001
0.01
0.1
1
10
I Collector Light Current ( mA
)
ca
E
e
Irradiance ( mW / cm
2
)
10
94 8255
V
CE
=5V
l=950nm
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.01
0.1
1
10
I Collector Light Current ( mA
)
ca
V
CE
Collector Emitter Voltage ( V )
100
94 8256
l=950nm
E
e
=1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
4
8
12
16
20
C Collector Emitter Capacitance ( pF )
CEO
V
CE
Collector Emitter Voltage ( V )
100
94 8247
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
4
8
12
16
94 8253
0
2
4
6
8
12
t / t
T
urn on /
T
urn
of
f
T
ime ( s )
of
f
I
C
Collector Current ( mA )
10
m
on
V
CE
=5V
R
L
=100
W
l=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
700
800
900
1000
1100
94 8261
0
0.2
0.4
0.6
0.8
1.0
S ( ) Relative Spectral Sensitivity
rel
l Wavelength ( nm )
l
Figure 8. Relative Spectral Sensitivity vs. Wavelength
S350P
Vishay Telefunken
4 (5)
Rev. 2, 20-May-99
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Document Number 81543
0.4
0.2
0
0.2
0.4
S Relative Sensitivity
rel
0.6
94 8257
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 9. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
96 12188
S350P
Vishay Telefunken
5 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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