S525T
Vishay Telefunken
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Rev. 3, 20-Jan-99
1 (7)
Document Number 85045
NChannel MOS-Fieldeffect Triode, Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
High frequency stages up to 300 MHz.
Features
D
Integrated gate protection diodes
D
Low feedback capacitance
D
Low noise figure
13 581
2
3
1
94 9280
S525T Marking: LB
Plastic case (SOT 23)
1=Source, 2=Gate , 3=Drain
D
S
12624
G
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Drain - source voltage
V
DS
20
V
Drain current
I
D
30
mA
Gate-source peak current
I
GSM
10
mA
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
S525T
Vishay Telefunken
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Rev. 3, 20-Jan-99
2 (7)
Document Number 85045
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Drain - source breakdown voltage
I
D
= 10
m
A, V
GS
= 4 V
V
(BR)DS
20
V
Gate - source breakdown voltage
I
GS
= 10 mA, V
DS
= 0
V
(BR)GSS
7.5
12
V
Gate - source leakage current
V
GS
= 6 V, V
DS
= 0
I
GSS
50
nA
Drain current
V
DS
= 10 V, V
GS
= 0
I
DSS
5
14
mA
Gate - source cut-off voltage
V
DS
= 10 V, I
D
= 20
m
A
V
GS(OFF)
2.5
V
Electrical AC Characteristics
V
DS
= 10 V, I
D
= 10 mA, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
14
16
mS
Gate input capacitance
C
issg1
2.7
pF
Feedback capacitance
C
rss
25
fF
Output capacitance
C
oss
1.0
pF
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1.0
dB
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
25
dB
S525T
Vishay Telefunken
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Rev. 3, 20-Jan-99
3 (7)
Document Number 85045
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
50
100
150
200
250
300
0
20
40
60
80
100 120 140 160
T
amb
Ambient Temperature (
C )
96 12159
P
T
otal Power Dissipation ( mW
)
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
4
8
12
16
20
0
2
4
6
8
10
V
DS
Drain Source Voltage ( V )
13612
I Drain Current ( mA
)
D
V
GS
= 0.6V
0.2V
0.4V
0
0.4V
0.6V
0.2V
Figure 2. Drain Current vs. Drain Source Voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.0
1.5
1.0
0.5
0.0
0.5
1.0
V
GS
Gate Source Voltage ( V )
13613
C Gate Input Capacitance ( pF )
issg
V
DS
=10V
f=1MHz
Figure 3. Gate Input Capacitance vs.
Gate Source Voltage
0
0.5
1.0
1.5
2.0
0
3
6
9
12
V
DS
Drain Source Voltage ( V )
13614
C Output Capacitance ( pF )
oss
V
GS
=0
I
D
=10mA
f=1MHz
Figure 4. Output Capacitance vs. Drain Source Voltage
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
Re (y
11
) ( mS )
13615
Im ( y ) ( mS )
11
V
DS
=10V
I
D
=10mA
f=50...300MHz
f=300MHz
150MHz
50MHz
200MHz
100MHz
250MHz
Figure 5. Short Circuit Input Admittance
0.05
0.04
0.03
0.02
0.01
0.00
0.01
0.008
0.006
0.004
0.002
0.000
Re (y
12
) ( mS )
13616
Im ( y ) ( mS )
12
V
DS
=10V
I
D
=10mA
f=50...300MHz
f=300MHz
150MHz
50MHz
200MHz
100MHz
250MHz
Figure 6. Short Circuit Reverse Transfer Admittance
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Rev. 3, 20-Jan-99
7 (7)
Document Number 85045
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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