VISHAY
SFH628A / SFH6286
Document Number 83722
Rev. 1.4, 26-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179080
1
1
E
C
A/C
C/A
1
2
4
3
Optocoupler, Phototransistor Output, AC Input, Low Input
Current
Features
High Common-mode Interference Immunity
Isolation Test Voltage, 5300 V
RMS
Low Coupling Capacitance
Good CTR Linearity Depending on
Forward Current
Low CTR Degradation
High Collector-emitter Voltage, V
CEO
= 55 V
Agency Approvals
UL - File No. E52744 System Code J
DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
Telecom
Industrial Controls
Battery Powered Equipment
Office Machines
Description
The SFH628A (DIP) and SFH6286 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared emitting diode, which is optically cou-
pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
to an operation voltage of 400 V
RMS
or DC.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
SFH628A-2
CTR 63 - 200 %, DIP-4
SFH628A-3
CTR 100 - 320 %, DIP-4
SFH628A-4
CTR 160 - 500 %, DIP-4
SFH6286-2
CTR 63 - 200 %, SMD-4
SFH6286-3
CTR 100 - 320 %, SMD-4
SFH6286-4
CTR 160 - 500 %, SMD-4
SFH628A-2-X006
CTR 63 - 200 %, DIP-4 400 mil (option 6)
SFH628A-3-X006
CTR 100 - 320 %, DIP-4 400 mil (option 6)
SFH628A-3-X007
CTR 100 - 320 %, SMD-4 (option 7)
SFH628A-4-X006
CTR 160 - 500 %, DIP-4 400 mil (option 6)
Parameter
Test condition
Symbol
Value
Unit
DC Forward current
I
F
50
mA
Surge forward current
t
10 s
I
FSM
2.5
A
www.vishay.com
2
Document Number 83722
Rev. 1.4, 26-Apr-04
VISHAY
SFH628A / SFH6286
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
V
CE
55
V
Emitter-collector voltage
V
EC
7.0
V
Collector current
I
C
50
mA
t
p
1.0 ms
I
C
100
mA
Power dissipation
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage between
emitter and detector, refer to
Climate DIN 40046, part2,
Nov.74
V
ISO
5300
V
RMS
Creepage distance
7.0
mm
Clearance
7.0
mm
Insulation thickness between
emitter and detector
0.4
mm
Comparative tracking index per
DIN IEC 112/VDEO 303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature range
T
stg
- 55 to +150
C
Ambient temperature range
T
amb
- 55 to +100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s. Dip Soldering
distance to seating plane
1.5 mm
T
sld
260
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 5.0 mA
V
F
1.1
1.5
V
Capacitance
V
R
= 0 V, f = 1.0 MHz
C
O
45
pF
Thermal resistance
R
thja
1070
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter leakage
current
V
CE
= 10 V
I
CEO
10
200
nA
Collector-emitter capacitance
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
7
pF
Thermal resistance
R
thja
500
K/W
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4
Document Number 83722
Rev. 1.4, 26-Apr-04
VISHAY
SFH628A / SFH6286
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Fig. 3 Current Transfer Ratio (typ.)
Fig. 4 Current Transfer Ratio (typ.)
Fig. 5 Diode Forward Voltage (typ.)
isfh618a_01
VCE = 0.5 V, CTR = f (TA)
isfh618a_01
VCE = 0.5 V, CTR = f (TA)
isfh618a_02
isfh618a_03
TA = 25C, VF = f (IF)
Fig. 6 Diode Forward Voltage (typ.)
Fig. 7 Transistor Capacitance
Fig. 8 Output Characteristics
isfh618a_04
IF = 1.0 mA, VF = f (TA)
isfh618a_05
TA = 25C, f = 1.0 MHz,
CEE = f (VCE)
TA = 25C,
CE = f
(VCE, IF)
isfh618a_06
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