VISHAY
SFH6916
Document Number 83687
Rev. 1.4, 20-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179076
1
2
E
C
A
C
15
16
3
4
E
C
A
C
13
14
5
6
E
C
A
C
11
12
7
8
E
C
A
C
9
10
Optocoupler, Phototransistor Output, Quad Channel, SOP-16,
Half Pitch Mini-Flat Package
Features
SOP (Small Outline Package)
Isolation Test Voltage, 3750 V
RMS
(1.0 s)
High Collector-Emitter Voltage,
V
CEO
= 70 V
Low Saturation Voltage
Fast Switching Times
Temperature Stable
Low Coupling Capacitance
End-Stackable, 0.050 " (1.27 mm) Spacing
Agency Approvals
UL File #E52744 System Code U
Description
The SFH6916 has a GaAs infrared emitter, which is
optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 16-pin 50 mil lead
pitch miniflat package. It features a high current trans-
fer ratio, low coupling capacitance, and high isolation
voltage.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
SFH6916
CTR 50 - 300 %, SMD-16
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6.0
V
DC Forward current
I
F
50
mA
Surge forward current
t
p
10 s
I
FSM
2.5
A
Total power dissipation
P
diss
80
mW
www.vishay.com
2
Document Number 83687
Rev. 1.4, 20-Apr-04
VISHAY
SFH6916
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
T
amb
= 25 C (except where noted)
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter voltage
V
CE
70
V
Emitter-collector voltage
V
EC
7.0
V
Collector current
I
C
50
mA
t
p
1.0 ms
I
C
100
mA
Total power dissipation per
channel
P
diss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Isolation test voltage between
emitter and detector (1.0 s)
V
ISO
3750
V
RMS
Creepage
5.33
mm
Clearance
5.08
mm
Comparative tracking index per
DIN IEC 112/VDEo 303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 C
R
IO
10
12
V
IO
= 500 V, T
amb
= 100 C
R
IO
10
11
Storage temperature range
T
stg
- 55 to + 125
C
Ambient temperature range
T
amb
- 55 to +100
C
Junction temperature
T
j
100
C
Soldering temperature
max. 10 s dip soldering distance
to seating plane
1.5 mm
260
C
Total power dissipation
P
tot
70
mW
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 5 mA
V
F
1.15
1.4
V
Reverse current
V
R
= 6.0 V
I
R
0.01
10
A
Capacitance
C
O
C
O
14
pF
Thermal resistance
R
thja
1000
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter leakage
current
V
CE
= 20 V
I
CEO
100
nA
Collector-emitter capacitance
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
2.8
pF
Thermal resistance
R
thja
500
K/W
VISHAY
SFH6916
Document Number 83687
Rev. 1.4, 20-Apr-04
Vishay Semiconductors
www.vishay.com
3
Coupler
Current Transfer Ratio
Switching Characteristics
Switching Operation (without saturation)
Switching Operation (with saturation)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter saturation
voltage
I
F
= 20 mA, I
C
= 1.0 mA
V
CESAT
0.1
0.4
V
Coupling capacitance
f = 1.0 MHz
C
C
1.0
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Current Transfer Ratio
I
F
= 5.0 mA, V
CC
= 5.0 V
CTR
50
300
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rise time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
t
r
4.0
s
Fall time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
t
f
3.0
s
Turn on time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
t
on
5.0
s
Turn off time
I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
t
off
4.0
s
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Rise time
I
F
= 16.0 mA, V
CC
= 5.0 V,
R
L
= 1.9 k
t
r
15
s
Fall time
I
F
= 16.0 mA, V
CC
= 5.0 V,
R
L
= 1.9 k
t
f
0.5
s
Turn on time
I
F
= 16.0 mA, V
CC
= 5.0 V,
R
L
= 1.9 k
t
on
1.0
s
Turn off time
I
F
= 16.0 mA, V
CC
= 5.0 V,
R
L
= 1.9 k
t
off
30
s
Fig. 1 Switching Operation (without Saturation)
isfh6916_01
R
L
=100
V
CC
= 10 V
I
C
50
I
F
Fig. 2 Switching Operation (with Saturation)
isfh6916_02
R
L
=1.9 k
V
CC
= 5 V
I
C
50
I
F
www.vishay.com
4
Document Number 83687
Rev. 1.4, 20-Apr-04
VISHAY
SFH6916
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
C unless otherwise specified)
Fig. 3 Diode Forward Voltage vs. Forward Current
Fig. 4 Collector Current vs. Collector Emitter Voltage
Fig. 5 Collector to Emitter Dark Current vs. Ambient Temperature
isfh6916_03
Forward
Voltage,
V
F
(V)
Forward Current, IF (mA)
0.01
0.10
1.00
10.00
100.00
1.6
1.4
1.1
0.9
0.6
T = 25C
T = 25C
T = 0C
T = 100C
T = 75C
T = 50C
T = 25C
isfh6916_04
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
IF = 30 mA
Collector
Current,
I C
(mA)
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
isfh6916_05
Collector
to
Emitter
D
ark
C
urrent,
I CEO
(nA)
Ambient Temperature, TA (C)
1000.0
100.0
10.0
1.0
60
40
20
0
20
40
60
80
100
12 V
24 V
40 V
Fig. 6 Collector Current vs. Collector-Emitter Saturation Voltage
Fig. 7 Normalized Output Current vs. Ambient Temperature
Fig. 8 Normalized Output Current vs. Ambient Temperature
isfh6916_06
Collector
Current
(
mA)
Collector-emitter Saturation Voltage, VCE (sat) (V)
100.000
10.000
1.000
0.100
0.010
0.001
0.0
0.2
0.4
0.6
0.8
1.0
IF = 25 mA
IF = 10 mA
IF = 5.0 mA
IF = 2.0 mA
IF = 1.0 mA
isfh6916_07
Normalized
Output
Current,
CTR
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Ambient Temperature, TA (C)
60
40
20
0
20
40
60
80
100
Normalized to 1.0 at TA = 25 C
IF = 1.0 mA, VCE = 5.0 V
isfh6916_08
Ambient Temperature, TA (C)
Normalized
Output
Current,
CTR
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
40
20
0
20
40
60
80
100
Normalized to 1.0 at TA = 25 C
IF = 1.0 mA, VCE = 5.0 V
VISHAY
SFH6916
Document Number 83687
Rev. 1.4, 20-Apr-04
Vishay Semiconductors
www.vishay.com
5
Fig. 9 Current Transfer Ratio vs. Forward Current
Fig. 10 Switching Time vs. Load Resistance
Fig. 11 Switching Time vs. Load Resistance
isfh6916_09
Current
Transfer
Ratio,
CTR
(%)
Forward Current, IF (mA)
300
250
200
150
100
50
0
0.1
1.0
10.0
50 100.0
VCE = 5.0 V
Typical for
CTR=250%
Typical for
CTR=150%
isfh6916_10
Switching
Time,
(
s)
VCC = 5.0 V
IC = 2.0 mA
Load Resistance, RL (ohm)
100.0
10.0
1.0
0.1
0
500
1000
1500
2000
ton
toff
td
ts
isfh6916_11
Switching
Time,
(
s)
Load Resistance, RL ()
1000
100
10
1
0
100
1000
10000
100000
IF = 5.0 mA
VCC = 5.0 V
TA = 25 C
CTR = 150%
t r
td
t s
tf
Fig. 12 Switching Time Measurement
isfh6916_12
toff
tr
tpdon
ton
td
tf
10%
50%
90%
Output
Input
10%
50%
90%
ts
tpdoff
PDF 
ZIP