FEATURES
D 100% R
g
Tested
Si2308DS
Vishay Siliconix
Document Number: 70797
S-31725--Rev. B, 18-Aug-03
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
60
0.16 @ V
GS
= 10 V
2.0
60
0.22 @ V
GS
= 4.5 V
1.7
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2308DS (A8)*
*Marking Code
Ordering Information: Si2308DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 25_C
I
D
2.0
Continuous Drain Current
(T
J
= 150_C)
a
T
A
= 70_C
I
D
1.6
A
Pulsed Drain Current
b
I
DM
10
A
Continuous Source Current (Diode Conduction)
a
I
S
1.0
Maximum Power Dissipation
a
T
A
= 25_C
P
D
1.25
W
Maximum Power Dissipation
a
T
A
= 70_C
P
D
0.80
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Ambient
a
R
100
_C/W
Maximum Junction-to-Ambient
c
R
thJA
166
_C/W
Notes
a.
Surface Mounted on FR4 Board, t = v5 sec.
b.
Pulse width limited by maximum junction temperature.
c.
Surface Mounted on FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si2308DS
Vishay Siliconix
www.vishay.com
2
Document Number: 70797
S-31725--Rev. B, 18-Aug-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
0.5
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C
10
mA
On State Drain Current
a
I
D( )
V
DS
w 4.5 V, V
GS
= 10 V
6
A
On-State Drain Current
a
I
D(on)
V
DS
w 4.5 V, V
GS
= 4.5 V
4
A
Drain Source On State Resistance
a
r
V
GS
= 10 V, I
D
= 2.0 A
0.125
0.16
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
1.7 A
0.155
0.22
W
Forward Transconductance
a
g
fs
V
DS
= 4.5 V, I
D
= 2.0 A
4.6
S
Diode Forward Voltage
a
V
SD
I
S
= 1 A, V
GS
= 0 V
0.77
1.2
V
Dynamic
Total Gate Charge
Q
g
4.8
10
Gate-Source Charge
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 2.0 A
0.8
nC
Gate-Drain Charge
Q
gd
1.0
Gate Resistance
R
g
0.5
3.3
W
Input Capacitance
C
iss
240
Output Capacitance
C
oss
V
DS
= 25 V,
V
GS
= 0 V, f = 1 MHz
50
pF
Reverse Transfer Capacitance
C
rss
DS
,
GS
,
15
p
Switching
Turn-On Delay Time
t
d(on)
7
15
Rise Time
t
r
V
DD
= 30 V, R
L
= 30 W
10
20
ns
Turn-Off Delay Time
t
d(off)
V
DD
= 30 V, R
L
= 30 W
I
D
^ 1 A, V
GEN
= 4.5 V, R
G
= 6 W
17
35
ns
Fall Time
t
f
6
15
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Si2308DS
Vishay Siliconix
Document Number: 70797
S-31725--Rev. B, 18-Aug-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3
6
9
12
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
0
3
6
9
12
0
3
6
9
12
0
2
4
6
8
10
0
2
4
6
8
10
0
1
2
3
4
5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
0
6
12
18
24
30
V
GS
= 10 thru 5 V
25_C
T
C
= 125_C
C
rss
C
oss
C
iss
V
DS
= 30 V
I
D
= 2.0 A
V
GS
= 10 V
I
D
= 2.0 A
V
GS
= 4.5 V
V
GS
= 10 V
4 V
3 V
-55_C
1, 2 V
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
Si2308DS
Vishay Siliconix
www.vishay.com
4
Document Number: 70797
S-31725--Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
500
1
10
I
D
= 2.0 A
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
0
1
9
12
3
6
100
0.1
0.00
0.2
0.4
0.6
0.8
T
J
= 25_C
T
J
= 150_C
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (_C)
Power (W)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
Time (sec)
10
100
PDF 
ZIP