Si2328DS
Vishay Siliconix
New Product
Document Number: 71796
S-05372--Rev. A, 25-Dec-01
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
100
0.250 @ V
GS
= 10 V
1.5
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2328DS (D8)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
100
Gate-Source Voltage
V
GS
"
20
V
_
T
A
= 25
_
C
1.5
1.15
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
1.2
0.92
Pulsed Drain Current
b
I
DM
6
A
Avalanche Current
b
I
AS
6
Single Avalanche Energy
L = 0.1 mH
E
AS
1.8
mJ
Continuous Source Current (Diode Conduction)
a
I
S
0.6
A
T
A
= 25
_
C
1.25
0.73
Power Dissipation
a
T
A
= 70
_
C
P
D
0.80
0.47
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
5 sec
80
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130
170
_
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
45
55
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
b.
Pulse width limited by maximum junction temperature
Si2328DS
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71796
S-05372--Rev. A, 25-Dec-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(
BR)DSS
V
GS
= 0 V, I
D
= 1 mA
100
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 80 V, V
GS
= 0 V
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V, T
J
= 70
_
C
75
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
15 V, V
GS
= 10 V
6
A
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 1.5 A
0.195
0.250
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 1.5 A
4
S
Diode Forward Voltage
V
SD
I
S
= 1.0 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
3.3
4.0
Gate-Source Charge
Q
gs
V
DS
= 50 V, V
GS
= 10 V, I
D
= 1.5 A
0.47
nC
Gate-Drain Charge
Q
gd
1.45
Switching
Turn-On Delay Time
t
d(on)
7
11
Rise Time
t
r
V
DD
= 50 V, R
L
= 33
W
11
17
Turn-Off Delay Time
t
d(off)
V
DD
= 50 V, R
L
= 33
W
I
D
^
0.2 A, V
GEN
= 10 V, R
G
= 6
W
9
15
ns
Fall-Time
t
f
10
15
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.5 A, di/dt = 100 A/
m
s
50
100
ns
Notes
a.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3
6
9
12
0
2
4
6
8
0
3
6
9
12
0
2
4
6
8
10
V
GS
= 10, 9, 8 V
T
C
= 125
_
C
55
_
C
6 V
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
5 V
4 V
7 V
3, 2, 1 V
Si2328DS
Vishay Siliconix
New Product
Document Number: 71796
S-05372--Rev. A, 25-Dec-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance (
r
DS(on)
W
)
0
50
100
150
200
250
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
50
25
0
25
50
75
100
125
150
0
4
8
12
16
20
0
1
2
3
4
5
6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
3
6
9
12
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 1.5 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
= 1.5 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
C
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
2
4
6
8
10
I
D
= 1.5 A
10
1
0.01
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
0.1
T
J
= 150
_
C
T
J
= 25
_
C
Si2328DS
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71796
S-05372--Rev. A, 25-Dec-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
3
10
2
1
10
600
10
1
10
4
100
0.01
0
1
10
12
4
6
100
600
0.1
Single Pulse Power
Time (sec)
2
8
Power (W)
1.2
0.9
0.6
0.3
0.0
0.3
0.6
50
25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 176
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
T
A
= 25
_
C
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