FEATURES
D
TrenchFET
r
Power MOSFET
D
PWM Optimized for (Lowest Q
g
and Low R
G
)
APPLICATIONS
D
Primary Side Switch
Si4464DY
Vishay Siliconix
New Product
Document Number: 72051
S-22099--Rev. A, 02-Dec-02
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.240 @ V
GS
= 10 V
2.2
200
0.260 @ V
GS
= 6.0 V
2.1
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
Gate-Source Voltage
V
GS
"
20
V
_
T
A
= 25
_
C
2.2
1.7
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
1.7
1.3
Pulsed Drain Current
I
DM
8
A
Single Avalanch Current
I
AS
3
Single Avalanch Energy
L = 0.1 mH
E
AS
0.45
mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.2
A
T
A
= 25
_
C
2.5
1.5
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.6
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
37
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
68
85
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
21
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4464DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72051
S-22099--Rev. A, 02-Dec-02
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
2.0
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 160 V, V
GS
= 0 V
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 55
_
C
5
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10
V
8
A
V
GS
= 10
V, I
D
= 2.2 A
0.195
0.240
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 6.0
V, I
D
= 2.1 A
0.210
0.260
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 2.2 A
8.0
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
12
18
Gate-Source Charge
Q
gs
V
DS
= 100 V,
V
GS
= 10 V, I
D
= 2.2 A
2.5
nC
Gate-Drain Charge
Q
gd
3.8
Gate Resistance
R
G
2.5
W
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
DD
= 100 V, R
L
= 100
W
12
20
Turn-Off Delay Time
t
d(off)
V
DD
= 100 V, R
L
= 100
W
I
D
^
1.0 A, V
GEN
= 10 V, R
G
= 6
W
15
25
ns
Fall Time
t
f
15
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/
m
s
60
90
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
0
1
2
3
4
5
6
0
2
4
6
8
0
2
4
6
8
V
GS
= 10 thru 5 V
T
C
= 125
_
C
-55
_
C
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
4 V
3 V
Si4464DY
Vishay Siliconix
New Product
Document Number: 72051
S-22099--Rev. A, 02-Dec-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
- On-Resistance (
r
DS(on)
W
)
0
200
400
600
800
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
3
6
9
12
0.0
0.1
0.2
0.3
0.4
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 100 V
I
D
= 2.2 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 2.2 A
Gate Charge
On-Resistance vs. Drain Current
- Gate-to-Source V
oltage
(V)
Q
g
- Total Gate Charge (nC)
C - Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
- On-Resistance (
r
DS(on)
W
)
0.0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
I
D
= 2.2 A
On-Resistance vs. Gate-to-Source Voltage
- On-Resistance (
r
DS(on)
W
)
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 6 V
V
GS
= 10 V
T
J
= 150
_
C
T
J
= 25
_
C
10
0.1
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
1
Si4464DY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72051
S-22099--Rev. A, 02-Dec-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-1.2
-0.8
-0.4
0.0
0.4
0.8
-50
-25
0
25
50
75
100
125
150
10
- 3
10
- 2
1
10
600
10
- 1
10
- 4
100
I
D
= 250
m
A
2
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0
30
50
10
20
Power (W)
Single Pulse Power
Time (sec)
1
600
10
40
0.1
0.001
100
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
10
0.1
0.1
1
10
1000
0.001
1
T
A
= 25
_
C
Single Pulse
- Drain Current (A)
I
D
P(t) = 10
dc
0.01
I
D(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
1
r
DS(on)
Limited
I
DM
Limited
0.01
100
Si4464DY
Vishay Siliconix
New Product
Document Number: 72051
S-22099--Rev. A, 02-Dec-02
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
- 3
10
- 2
10
10
- 1
10
- 4
2
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1
1
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