Si4501DY
Vishay Siliconix
New Product
Document Number: 70934
S-61812--Rev. B, 19-Jul-99
www.vishay.com
2-1
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
N Channel
30
0.018 @ V
GS
= 10 V
"
9
N-Channel
30
0.027 @ V
GS
= 4.5 V
"
7.4
P Channel
8
0.042 @ V
GS
= -4.5 V
"
6.2
P-Channel
-8
0.060 @ V
GS
= -2.5 V
"
5.2
S
1
D
G
1
D
S
2
D
G
2
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
30
-8
V
Gate-Source Voltage
V
GS
"
20
"
8
V
Continuous Drain Current
(T
J
= 150
_
C)
a, b
T
A
= 25
_
C
I
D
"
9
"
6.2
Continuous Drain Current
(T
J
= 150
_
C)
a, b
T
A
= 70
_
C
I
D
"
7.4
"
5.0
A
Pulsed Drain Current
I
DM
"
30
"
20
A
Continuous Source Current (Diode Conduction)
a, b
I
S
1.7
-1.7
Maximum Power Dissipation
a, b
T
A
= 25
_
C
P
D
2.5
W
Maximum Power Dissipation
a, b
T
A
= 70
_
C
P
D
1.6
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
38
50
40
50
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
73
95
73
95
_
C/W
Maximum Junction-to-Foot
Steady-State
R
thJC
17
22
20
26
C/W
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v
10 sec
Si4501DY
Vishay Siliconix
New Product
www.vishay.com
2-2
Document Number: 70934
S-61812--Rev. B, 19-Jul-99
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS( h)
V
DS
= V
GS
, I
D
= 250
m
A
N-Ch
0.8
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
N Ch
P-Ch
-0.45
V
Gate Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
N-Ch
"
100
nA
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
8 V
N Ch
P-Ch
"
100
nA
V
DS
= 24 V, V
GS
= 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -6.4 V, V
GS
= 0 V
N Ch
P-Ch
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
_
C
N-Ch
5
m
A
V
DS
= -6.4 V, V
GS
= 0 V, T
J
= 55
_
C
N Ch
P-Ch
-5
On State Drain Current
b
I
D( )
V
DS
= 5 V, V
GS
= 10 V
N-Ch
30
A
On-State Drain Current
b
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
N Ch
P-Ch
-20
A
V
GS
= 10 V, I
D
= 9 A
N-Ch
0.015
0.018
Drain Source On State Resistance
b
r
DS( )
V
GS
= -4.5 V, I
D
= -6.2 A
N Ch
P-Ch
0.034
0.042
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 7.4 A
N-Ch
0.022
0.027
W
V
GS
= -2.5 V, I
D
= -5.2 A
N Ch
P-Ch
0.048
0.060
Forward Transconductance
b
g
f
V
DS
= 15 V, I
D
= 9 A
N-Ch
20
S
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -6.2 A
N Ch
P-Ch
14
S
Diode Forward Voltage
b
V
SD
I
S
= 1.7 A, V
GS
= 0 V
N-Ch
0.71
1.1
V
Diode Forward Voltage
b
V
SD
I
S
= -1.7 A, V
GS
= 0 V
N Ch
P-Ch
-0.70
-1.1
V
Dynamic
a
Total Gate Charge
Q
N-Ch
4.5
20
Total Gate Charge
Q
g
N-Channel
N Ch
P-Ch
15
25
Gate Source Charge
Q
N-Channel
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 9 A
N-Ch
3.3
nC
Gate-Source Charge
Q
gs
P-Channel
V
V V V I 6 2 A
N Ch
P-Ch
3.0
nC
Gate Drain Charge
Q
d
P Channel
V
DS
= -4 V,
V
GS
= -5 V, I
D
= -6.2 A
N-Ch
6.6
Gate-Drain Charge
Q
gd
N Ch
P-Ch
2.0
Turn On Delay Time
t
d( )
N-Ch
13
20
Turn-On Delay Time
t
d(on)
N Ch
l
N Ch
P-Ch
20
40
Rise Time
t
N-Channel
V
DD
= 15 V, R
L
= 15
W
N-Ch
9
18
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
W
I
D
^
1
A, V
GEN
= 10 V, R
G
= 6
W
N Ch
P-Ch
50
100
Turn Off Delay Time
t
d( ff)
P-Channel
V 4 V R 4
W
N-Ch
35
50
ns
Turn-Off Delay Time
t
d(off)
V
DD
= -4 V, R
L
= 4
W
I
D
^
-
1
A, V
GEN
= -4.5 V, R
G
= 6
W
N Ch
P-Ch
110
220
ns
Fall Time
t
f
I
D
^
-
1
A, V
GEN
= -4.5 V, R
G
= 6
W
N-Ch
17
30
Fall Time
t
f
N Ch
P-Ch
60
120
Source Drain Reverse Recovery Time
t
I
F
= 1 7 A di/dt = 100 A/
m
s
N-Ch
35
70
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
m
s
N Ch
P-Ch
60
100
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
Si4501DY
Vishay Siliconix
New Product
Document Number: 70934
S-61812--Rev. B, 19-Jul-99
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
0.00
0.01
0.02
0.03
0.04
0.05
0
6
12
18
24
30
On-Resistance vs. Drain Current
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
300
600
900
1200
1500
1800
0
6
12
18
24
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
0
2
4
6
8
10
0
2
4
6
8
10
0
5
10
15
20
25
V
GS
= 10 thru 4 V
T
C
= 125
_
C
-55
_
C
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 11 A
V
GS
= 10 V
I
D
= 11 A
3 V
25
_
C
Output Characteristics
Transfer Characteristics
Gate Charge
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
Si4501DY
Vishay Siliconix
New Product
www.vishay.com
2-4
Document Number: 70934
S-61812--Rev. B, 19-Jul-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
On-Resistance vs. Gate-to-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
I
D
= 4.5 A
-
On-Resistance (
r
DS(on)
W
)
0.01
0
1
50
20
30
10
30
0.1
Single Pulse Power
Time (sec)
10
40
Power (W)
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
= 150
_
C
T
J
= 25
_
C
I
D
= 250
m
A
50
10
1
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Source-Drain Diode Forward Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 73
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
100
Si4501DY
Vishay Siliconix
New Product
Document Number: 70934
S-61812--Rev. B, 19-Jul-99
www.vishay.com
2-5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.00
0.04
0.08
0.12
0.16
0.20
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
0
500
1000
1500
2000
2500
0
2
4
6
8
V
GS
= 5 thru 3 V
25
_
C
T
C
= -55
_
C
C
rss
C
oss
C
iss
V
GS
= 4.5 V
V
GS
= 2.5 V
2.5 V
2 V
125
_
C
1.5 V
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
-
On-Resistance (
r
DS(on)
W
)
I
D
- Drain Current (A)
Capacitance
V
GS
= 1.8 V
1 V
1.8 V
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