FEATURES
D
TrenchFET
r
Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switches
- Notebook PCs
- Desktop PCs
Si4835BDY
Vishay Siliconix
New Product
Document Number: 72029
S-31062--Rev. C, 26-May-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
-30
0.018 @ V
GS
= -10 V
-9.6
-30
0.030 @ V
GS
= -4.5 V
-7.5
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information: Si4835BDY
Si4835BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
"
25
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
-9.6
-7.4
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
-7.7
-5.9
A
Pulsed Drain Current
I
DM
-50
A
continuous Source Current (Diode Conduction)
a
I
S
-2.1
-1.3
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.5
1.5
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.6
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
39
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
85
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
18
22
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4835BDY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72029
S-31062--Rev. C, 26-May-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
-1.0
-3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
25
V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V, T
J
= 55
_
C
-5
m
A
On-State Drain Current
a
I
D(on)
V
DS
v
-5 V, V
GS
= -10 V
-50
A
Drain Source On State Resistance
a
r
DS( )
V
GS
= -10 V, I
D
= -9.6 A
0.014
0.018
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -4.5 V, I
D
= -7.5 A
0.023
0.030
W
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -9.6 A
30
S
Diode Forward Voltage
a
V
SD
I
S
= -2.1 A, V
GS
= 0 V
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
25
37
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -5 V, I
D
= -9.6 A
6.5
nC
Gate-Drain Charge
Q
gd
12.5
Gate Resistance
R
g
1.0
2.9
4.9
W
Turn-On Delay Time
t
d(on)
15
25
Rise Time
t
r
V
DD
= -15 V, R
L
= 15
W
13
20
Turn-Off Delay Time
t
d(off)
V
DD
= -15 V, R
L
= 15
W
I
D
^
-1 A, V
GEN
= -10 V, R
G
= 6
W
60
100
ns
Fall Time
t
f
45
70
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.1 A, di/dt = 100 A/
m
s
45
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0
1
2
3
4
5
6
V
GS
= 10 thru 5 V
T
C
= -55
_
C
125
_
C
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
4 V
3 V
Si4835BDY
Vishay Siliconix
New Product
Document Number: 72029
S-31062--Rev. C, 26-May-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-
On-Resistance (
r
DS(on)
W
)
0
800
1600
2400
3200
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
10
20
30
40
50
0.00
0.01
0.02
0.03
0.04
0.05
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 9.6 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 9.6 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
0
2
4
6
8
10
T
J
= 25
_
C
I
D
= 9.6 A
60
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 4.5 V
T
J
= 150
_
C
Si4835BDY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72029
S-31062--Rev. C, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
80
20
60
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
600
100
10
-1
10
-2
10
40
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
A
= 25
_
C
Single Pulse
-
Drain Current (A)
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
D(on)
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Si4835BDY
Vishay Siliconix
New Product
Document Number: 72029
S-31062--Rev. C, 26-May-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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