FEATURES
D
TrenchFET
r
Power MOSFET
APPLICATIONS
D
Load Switch
Si4493DY
Vishay Siliconix
New Product
Document Number: 72256
S-31420--Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
-20
0.00775 @ V
GS
= -4.5 V
-14
-20
0.01225 @ V
GS
= -2.5 V
-11
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
Ordering Information: Si4493DY
Si4493DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
"
12
V
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
-14
-10
Continuous Drain Current
(T
J
= 150
_
C)
a
T
A
= 70
_
C
I
D
-11
-8
A
Pulsed Drain Current
I
DM
-50
A
continuous Source Current (Diode Conduction)
a
I
S
-2.7
-1.36
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
3.0
1.5
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.9
0.95
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
M i
J
ti
t A bi t
a
t
v
10 sec
R
33
42
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
84
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
16
21
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board.
Si4493DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72256
S-31420--Rev. A, 07-Jul-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
m
A
-0.6
-1.4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
12
V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
-1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V, T
J
= 70
_
C
-10
m
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-30
A
Drain Source On State Resistance
a
r
DS( )
V
GS
= -4.5 V, I
D
= -14 A
0.0065
0.00775
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -11 A
0.010
0.01225
W
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -14 A
60
S
Diode Forward Voltage
a
V
SD
I
S
= -2.7 A, V
GS
= 0 V
-0.68
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
65
110
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -4.5 V, I
D
= -14 A
14.5
nC
Gate-Drain Charge
Q
gd
21
Turn-On Delay Time
t
d(on)
110
165
Rise Time
t
r
V
DD
= -10 V, R
L
= 10
W
150
225
ns
Turn-Off Delay Time
t
d(off)
V
DD
= -10 V, R
L
= 10
W
I
D
^
-1 A, V
GEN
= -4.5 V, R
G
= 6
W
220
330
ns
Fall Time
t
f
140
210
Gate Resistance
R
g
3.8
W
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.7 A, di/dt = 100 A/
m
s
85
130
ns
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
= 125
_
C
-55
_
C
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
2 V
Si4493DY
Vishay Siliconix
New Product
Document Number: 72256
S-31420--Rev. A, 07-Jul-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-
On-Resistance (
r
DS(on)
W
)
0
1800
3600
5400
7200
9000
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
14
28
42
56
70
0.000
0.003
0.006
0.009
0.012
0.015
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 14 A
I
D
- Drain Current (A)
V
GS
= 4.5 V
I
D
= 14 A
Gate Charge
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
C
-
Capacitance (pF)
V
GS
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (
_
C)
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0.006
0.012
0.018
0.024
0.030
0
1
2
3
4
5
6
7
8
T
J
= 25
_
C
I
D
= 14 A
100
10
0.1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
On-Resistance (
r
DS(on)
W
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
V
GS
= 2.5 V
T
J
= 150
_
C
1
V
GS
= 4.5 V
Si4493DY
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72256
S-31420--Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
60
100
20
40
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
80
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-0.4
-0.2
0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250
m
A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
ariance (V)
V
GS(th)
T
J
- Temperature (
_
C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.1
10
1
0.01
0.001
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.1
10
100 ms
-
Drain Current (A)
I
D
0.1
Limited by r
DS(on)
T
C
= 25
_
C
Single Pulse
1 s
10 s
dc
10 ms
1 ms
Si4493DY
Vishay Siliconix
New Product
Document Number: 72256
S-31420--Rev. A, 07-Jul-03
www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
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