Si9945AEY
Vishay Siliconix
Document Number: 70758
S-57253--Rev. C, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-1
Dual N-Channel 60-V (D-S), 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
60
0.080 @ V
GS
= 10 V
"
3.7
60
0.100 @ V
GS
= 4.5 V
"
3.4
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
D
2
G
2
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 175
_
C)
a
T
A
= 25
_
C
I
D
"
3.7
A
Continuous Drain Current
(T
J
= 175
_
C)
a
T
A
= 70
_
C
I
D
"
3.2
A
Pulsed Drain Current
I
DM
25
A
Continuous Source Current (Diode Conduction)
a
I
S
2
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.4
W
Maximum Power Dissipation
a
T
A
= 70
_
C
P
D
1.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ
Max
Unit
Junction-to-Ambienta
t
v
10 sec
R
thJA
62.5
_
C/W
Junction-to-Ambienta
Steady State
R
thJA
93
_
C/W
Notes
a.
Surface Mounted on 1" x 1" FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si9945AEY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70758
S-57253--Rev. C, 24-Feb-98
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55
_
C
10
m
A
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
20
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 3.7 A
0.06
0.080
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 3.4 A
0.075
0.100
W
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.7 A
11
S
Diode Forward Voltage
a
V
SD
I
S
= 2.0 A, V
GS
= 0 V
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
30 V V
10 V I
3 7 A
11
20
C
Gate-Source Charge
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 3.7 A
2
nC
Gate-Drain Charge
Q
gd
2
Turn-On Delay Time
t
d(on)
V
30 V R
30
W
9
20
Rise Time
t
r
V
DD
= 30 V, R
L
= 30
W
I
1 A V
10 V R
6
W
10
20
Turn-Off Delay Time
t
d(off)
DD
,
L
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
21
40
ns
Fall Time
t
f
8
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.0 A, di/dt = 100 A/
m
s
45
80
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
Si9945AEY
Vishay Siliconix
Document Number: 70758
S-57253--Rev. C, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
0
1
2
3
4
5
6
0
5
10
15
20
25
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
On-Resistance (
r
DS(on)
W
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature (
_
C)
(Normalized)
On-Resistance (
r
DS(on)
W
)
0
2
4
6
8
10
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
2.4
50
25
0
25
50
75
100
125
150
175
0
0.04
0.08
0.12
0.16
0.20
0
5
10
15
20
25
25
_
C
150
_
C
V
GS
= 10 V
C
rss
C
oss
3 V
V
GS
= 4.5 V
T
C
= 55
_
C
V
DS
= 30 V
I
D
= 3.7 A
V
GS
= 10 V
I
D
= 3.7 A
V
GS
= 10 through 5 V
4 V
0
200
400
600
800
0
10
20
30
40
50
60
C
iss
Si9945AEY
Vishay Siliconix
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70758
S-57253--Rev. C, 24-Feb-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
0.3
0.6
0.9
1.2
1.5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
On-Resistance (
r
DS(on)
W
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Source Current (A)
I
S
T
J
Temperature (
_
C)
Time (sec)
Power (W)
0
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
0.9
0.6
0.3
0.0
0.3
0.6
50
25
0
25
50
75
100
125
150
175
T
J
= 175
_
C
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
10
+3
I
D
= 3.7 A
I
D
= 250
m
A
0
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
V
ariance (V)
V
GS(th)
T
J
= 25
_
C
30
60
90
120
0.001
0.01
0.1
1
10
100
1000
10
+2
1
10
30
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