SiP41109/41110
Vishay Siliconix
New Product
Document Number: 73023
S-51104--Rev. A, 13-Jun-05
www.vishay.com
1
Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion
FEATURES
APPLICATIONS
D PWM With Tri-State Enable
D 12-V Low-Side Gate Drive (SiP41109)
D 8-V Low-Side Gate Drive (SiP41110)
D Undervoltage Lockout
D Internal Bootstrap Diode
D Switching Frequency Up to 1 MHz
D 30-ns Max Propagation Delay
D Drive MOSFETs In 5- to 48-V Systems
D Adaptive Shoot-Through Protection
D Multi-Phase DC/DC Conversion
D High Current Low Voltage DC/DC Converters
D High Frequency DC/DC Converters
D Mobile and Desktop Computer DC/DC Converters
D Core Voltage Supplies for PC Micro-Processors
DESCRIPTION
The SiP41109 and SiP41110 are high-speed half-bridge
MOSFET drivers for use in high frequency, high current,
multiphase dc-to-dc synchronous rectifier buck power
supplies. They are designed to operate at switching
frequencies up to 1 MHz. The high-side driver is bootstrapped
to allow driving n-channel MOSFETs.
They feature adaptive shoot-through protection to prevent
simultaneous conduction of the external MOSFETs. There are
two options available for the voltage of the high-side and
low-side drivers. In the SiP41109, the regulator supplies gate
drive voltage to the high-side driver and V
CC
supplies the
low-side driver. in the SiP41110, the regulator supplies the
high- and low-side gate drive voltage.
The SiP41109 and SiP41110 are assembled in a
lead (Pb)-free 8-pin SOIC package for operation over the
industrial operating range (-40 _C to 85 _C).
TYPICAL APPLICATION CIRCUIT
Controller
PWM
(Tri-State)
GND
V
CC
V
OUT
GND
GND
+12 V
+5 to 48 V
BOOT
UGATE
PHASE
LGATE
SiP41109/41110
PVcc
SiP41109/41110
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73023
S-51104--Rev. A, 13-Jun-05
ABSOLUTE MAXIMUM RATINGS (ALL VOLTAGES REFERENCED TO GND = 0 V)
V
CC
, PV
CC
-0.3 to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT, PHASE
-0.3 to 55 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT to PHASE
-0.3 to 15 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
-40 to 150_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
125_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
SO-8
770 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Impedance (Q
JA
)
b
SO-8
130_C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Device mounted with all leads soldered or welded to PC board.
b.
Derate 7.7 mW/_C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE (ALL VOLTAGES REFERENCED TO GND = 0 V)
V
CC
10.8 to 13.2 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
LX
.48 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
BOOT
.100 nF to 1 mF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BOOT to PHASE
. 8 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
-40 to 85_C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
SPECIFICATIONS
a
Test Conditions Unless Specified
Limits
Parameter
Symbol
V
CC
= 12 V, V
BOOT
- V
PHASE
= 8 V
T
A
= -40 to 85_C
Min
a
Typ
b
Max
a
Unit
Power Supplies
Supply Voltage
V
CC
10.8
13.2
V
Quiescent Current
I
CCQ
PWM Non-Switching
5.6
9.5
Supply Current
I
DD
f
PWM
= 100 kHz C
LOAD
= 3 nF
SiP41109
12.5
mA
Supply Current
I
DD
f
PWM
= 100 kHz, C
LOAD
= 3 nF
SiP41110
11.0
mA
Tristate (Shutdown) Current
I
CCT
PWM = Open
850
1200
mA
Reference Voltage
Break-Before-Make
V
BBM
2.5
V
PWM Input
Input High
V
IH
4.0
V
CC
V
Input Low
V
IL
1.0
V
Bias Current
I
B
PWM 5 V or 0 V
"600
"1000
mA
Tristate Threshold
High
V
TSH
3.0
V
Tristate Threshold
Low
V
TSL
2.0
V
Tristate Holdoff Timeout
c
t
TST
240
ns
Bootstrap Diode
Forward Voltage
V
F
I
F
= 40 mA, T
A
= 25_C
0.70
0.85
1.0
V
MOSFET Drivers
High-Side Drive Current
c
I
PKH(source)
V
BOOT
- V
PHASE
= 8 V
0.8
High-Side Drive Current
c
I
PKH(sink)
V
BOOT
- V
PHASE
= 8 V
1.0
I
PKL(source)
V
PVCC
= 8 V
SiP41110
0.9
A
Low Side Drive Current
c
I
PKL(sink)
V
PVCC
= 8 V
SiP41110
1.2
A
Low-Side Drive Current
c
I
PKL(source)
V
PVCC
= 12 V
SiP41109
1.4
I
PKL(sink)
V
PVCC
= 12 V
SiP41109
1.8
SiP41109/41110
Vishay Siliconix
New Product
Document Number: 73023
S-51104--Rev. A, 13-Jun-05
www.vishay.com
3
SPECIFICATIONS
a
Limits
Test Conditions Unless Specified
V
CC
= 12 V, V
BOOT
- V
PHASE
= 8 V
T
A
= -40 to 85_C
Parameter
Unit
Max
a
Typ
b
Min
a
Test Conditions Unless Specified
V
CC
= 12 V, V
BOOT
- V
PHASE
= 8 V
T
A
= -40 to 85_C
Symbol
MOSFET Drivers
High Side Driver Impedance
R
DH(source)
V
BOOT
V
PHASE
= 8 V PHASE = GND
2.3
4.2
High-Side Driver Impedance
R
DH(sink)
V
BOOT
- V
PHASE
= 8 V, PHASE = GND
1.9
3.5
R
DL(source)
V
PVCC
= 8 V
SiP41110
2.9
5.2
W
Low Side Driver Impedance
R
DL(sink)
V
PVCC
= 8 V
SiP41110
1.3
2.4
W
Low-Side Driver Impedance
R
DL(source)
V
PVCC
= 12 V
SiP41109
2.4
4.3
R
DL(sink)
V
PVCC
= 12 V
SiP41109
1.2
2.2
High-Side Rise Time
t
rH
10% - 90% V
BOOT
- V
PHASE
= 8 V C
LOAD
= 3 nF
45
High-Side Fall Time
t
fH
10% - 90%, V
BOOT
- V
PHASE
= 8 V, C
LOAD
= 3 nF
35
High-Side Rise Time Bypass
10% - 90% V
BOOT
- V
PHASE
= 12 V C
LOAD
= 3 nF
45
High-Side Fall Time Bypass
10% - 90%, V
BOOT
- V
PHASE
= 12 V, C
LOAD
= 3 nF
35
High Side Propagation Delay
c
t
d(off)H
See Timing Waveforms
15
High-Side Propagation Delay
c
t
d(on)H
See Timing Waveforms
15
Low Side Rise Time
t
L
10% - 90%, V
BOOT
- V
PHASE
= 8 V
C
LOAD
= 3 nF
SiP41110
40
ns
Low-Side Rise Time
t
rL
10% - 90%, V
BOOT
- V
PHASE
= 12 V
C
LOAD
= 3 nF
SiP41109
40
ns
Low Side Fall Time
t
fL
10% - 90%, V
BOOT
- V
PHASE
= 8 V
C
LOAD
= 3 nF
SiP41110
30
Low-Side Fall Time
t
fL
10% - 90%, V
BOOT
- V
PHASE
= 12 V
C
LOAD
= 3 nF
SiP41109
30
Low Side Propagation Delay
t
d(off)L
See Timing Waveforms
15
Low-Side Propagation Delay
t
d(on)L
See Timing Waveforms
15
PHASE Timer
PHASE Falling Timeout
c
t
PHASE
380
ns
PV
CC
Regulator
Output Voltage
PV
CC
7.6
8
8.4
V
Output Current
I
PVCC
80
100
mA
Current Limit
I
LIM
V
DRV
= 0 V
120
200
280
mA
Line Regulation
LNR
V
CC
= 10.8 V to 13.2 V
0.05
0.5
%/V
Load Regulation
LDR
5 mA to 80 mA
0.1
1.0
%
PV
CC
Regulator UVLO
PV
CC
Rising
V
UVLO2
6.7
7.2
V
PV
CC
Falling
V
UVLO2
6.4
6.9
V
Hysteresis
Hyst
100
300
500
mV
High-Side Undervoltage Lockout
Threshold
V
UVHS
Rising or Falling
2.5
3.35
4.0
V
V
CC
Undervoltage Lockout
Threshold
V
UVLO1
5.0
5.3
5.6
V
Power on Reset Time
POR
2.5
ms
Thermal Shutdown
Temperature
T
SD
Temperature Rising
165
_C
Hysteresis
T
H
Temperature Falling
25
_C
Notes
a.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing and are measured at V
CC
= 12 V unless otherwise noted.
BOOT
SO-8
5
6
7
8
Top View
2
3
4
1
UGATE
PHASE
PWM
PV
CC
V
CC
GND
LGATE
SiP41109
SiP41110
SiP41109/41110
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73023
S-51104--Rev. A, 13-Jun-05
TIMING WAVEFORMS
t
d(on)L
t
d(off)H
t
d(off)L
PWM
UGate
LGate
t
d(on)H
10%
90%
50%
90%
10%
10%
10%
50%
90%
90%
t
fL
t
rH
t
rL
t
fH
2.5 V
Phase
PIN CONFIGURATION AND TRUTH TABLE
TRUTH TABLE
PWM
UGATE
LGATE
L
L
H
H
H
L
Tri-State
L
L
ORDERING INFORMATION
Part Number
Temperature Range
Marking
SiP41109DY-T1--E3
-40 to 85_C
41109
SiP41110DY-T1--E3
-40 to 85_C
41110
Eval Kit
Temperature Range
SiP41109DB
-40 to 85_C
SiP41110DB
-40 to 85_C
PIN DESCRIPTION
Pin Number
Name
Function
1
UGATE
8-V high-side MOSFET gate drive
2
BOOT
Bootstrap supply for high-side driver. The bootstap capacitor is connected between BOOT and PHASE.
3
PWM
Input signal for the MOSFET drivers and tri-state enable
4
GND
Ground
5
LGATE
Synchronous or low-side MOSFET gate drive
6
V
CC
12-V supply. Connect a bypass capacitor w1 mF from here to ground
7
PV
CC
8-V Voltage Regulator Output. Connect a bypass capacitor w1 mF from here to ground
8
PHASE
Connection to source of high-side MOSFET, drain of the low-side MOSFET, and the inductor
SiP41109/41110
Vishay Siliconix
New Product
Document Number: 73023
S-51104--Rev. A, 13-Jun-05
www.vishay.com
5
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
PWM
GND
V
CC
UGATE
PHASE
LGATE
V
DRL
BOOT
V
BBM
(2.5 V)
-
+
UVLO
OTP
Tri-State
Detect
PV
CC
+8-V Linear
Regulator
Linear
Regulator
+5 V
SiP41109 - V
DRL
= V
CC
(12 V)
SiP41110 - V
DRL
= PV
CC
(8 V)
UVLO
DETAILED OPERATION
PWM/Tri-State Enable
The PWM pin controls the switching of the external MOSFETs.
The driver logic operates in a noninverting configuration. The
PWM input stage should be driven by a signal with fast
transition times, like those provided by a PWM controller or
logic gate, (<200 ns). The PWM input functions as a logic input
and is not intended for applications where a slow changing
input voltage is used to generate a switching output when the
input switching threshold voltage is reached.
Shutdown
The SiP41109/41110 enters shutdown mode when the signal
driving PWM enters the tri-state window for more than 240 ns.
The shutdown state is removed when the PWM signal moves
outside the tri-state window. If the PWM is left open, the pin is
held to 2.5 V by an internal voltage divider, thus forcing the
tri-state condition.
Low-Side Driver
In the SiP41109, the low-side driver voltage is supplied by V
CC
.
In the SiP41110, the low-side driver voltage is supplied by
PV
CC
. During shutdown, LGATE is held low.
High-Side Driver
The high-side driver is isolated from the substrate to create a
floating high-side driver so that an n-channel MOSFET can be
used for the high-side switch. The high-side driver voltage is
supplied by PV
CC
. The voltage is maintained by a floating
bootstrap capacitor, which is continually recharged by the
switching action of the output. During shutdown UGATE is
held low.
Gate Drive Voltage (PV
CC
) Regulator
An integrated 80-mA, 8-V regulator supplies voltage to the
PV
CC
pin and it current limits at 200 mA typical when the
output is shorted to ground. A capacitor (1 mF minimum) must
be connected to the PV
CC
pin to stabilize the regulator output.
The voltage on PV
CC
is supplied to the integrated bootstrap
diode. PV
CC
is used to recharge the bootstrap capacitor and
powers the SiP41110 low-side driver. PV
CC
pin can be
externally connected to V
CC
to bypass the 8-V regulator and
increase high-side gate drive to 12 V. If the PV
CC
pin is
connected to V
CC
the system voltage should not exceed 43V.
Bootstrap Circuit
The internal bootstrap diode and an external bootstrap
capacitor supply voltage to the BOOT pin. An integrated
bootstrap diode replaces the external diode normally needed
for the bootstrap circuit; only a capacitor is necessary to
complete the bootstrap circuit. The bootstrap capacitor is
sized according to,
C
BOOT
= (Q
GATE
/(DV
BOOT
- V
PHASE
)) x 10
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