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Электронный компонент: SMBJ7.0A/2

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Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Document Number 88392
08-Sep-06
www.vishay.com
1
Surface Mount T
RANS
Z
ORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
600 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 C
Solder Dip 260 C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AA (SMB J-Bend)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional devices use C or CA suffix
(e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V
WM
5.0 V to 188 V
P
PPM
600 W
I
FSM
(Unidirectional only)
100 A
T
j
max.
150 C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform
(1,2)
(see Fig. 1)
P
PPM
Minimum
600 W
Peak pulse current with a 10/1000 s waveform
(1)
I
PPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
I
FSM
100 A
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150
C
www.vishay.com
2
Document Number 88392
08-Sep-06
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
DEVICE TYPE
MODIFIED
"J" BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
V
(BR)
AT I
T
(1)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
UNI
BI
MIN MAX
(+)
SMBJ5.0 KD
KD
6.40
7.82
10 5.0 800 62.5 9.6
(+)
SMBJ5.0A
(5)
KE KE 6.40
7.07 10
5.0
800
65.2
9.2
(+)
SMBJ6.0 KF
KF
6.67
8.15
10 6.0 800 52.6 11.4
(+)
SMBJ6.0A KG
KG
6.67
7.37
10
6.0
800
58.3 10.3
(+)
SMBJ6.5 KH
AH
7.22
8.82
10 6.5 500 48.8 12.3
(+)
SMBJ6.5A KK
AK
7.22
7.98
10 6.5
500
53.6 11.2
(+)
SMBJ7.0 KL
KL
7.78
9.51
10 7.0 200 45.1 13.3
(+)
SMBJ7.0A KM
KM
7.78
8.60
10
7.0
200
50.0
12.0
(+)
SMBJ7.5 KN
AN
8.33
10.2
1.0 7.5 100 42.0 14.3
(+)
SMBJ7.5A KP
AP
8.33
9.21
1.0 7.5
100
46.5 12.9
(+)
SMBJ8.0 KQ
AQ
8.89
10.9
1.0 8.0 50 40.0 15.0
(+)
SMBJ8.0A KR
AR
8.89
9.83
1.0 8.0
50
44.1 13.6
(+)
SMBJ8.5 KS
AS
9.44
11.5
1.0 8.5 20 37.7 15.9
(+)
SMBJ8.5A KT
AT
9.44
10.4
1.0 8.5
20
41.7 14.4
(+)
SMBJ9.0 KU
AU
10.0
12.2
1.0 9.0 10 35.5 16.9
(+)
SMBJ9.0A KV
AV
10.0
11.1
1.0 9.0
10
39.0 15.4
(+)
SMBJ10 KW
AW
11.1
13.6
1.0 10 5.0 31.9 18.8
(+)
SMBJ10A KX
AX
11.1
12.3
1.0 10
5.0 35.3 17.0
(+)
SMBJ11 KY
KY
12.2
14.9
1.0 11 5.0 29.9 20.1
(+)
SMBJ11A KZ
KZ
12.2
13.5
1.0 11
5.0 33.0 18.2
(+)
SMBJ12 LD
BD
13.3
16.3
1.0 12 5.0 27.3 22.0
(+)
SMBJ12A LE
BE
13.3
14.7
1.0 12
5.0 30.2 19.9
(+)
SMBJ13 LF
LF
14.4
17.6
1.0 13 1.0 25.2 23.8
(+)
SMBJ13A LG
LG
14.4
15.9
1.0 13
1.0 27.9 21.5
(+)
SMBJ14 LH
BH
15.6
19.1
1.0 14 1.0 23.3 25.8
(+)
SMBJ14A LK
BK
15.6
17.2
1.0 14
1.0 25.9 23.2
(+)
SMBJ15 LL
BL
16.7
20.4
1.0 15 1.0 22.3 26.9
(+)
SMBJ15A LM
BM
16.7
18.5
1.0 15
1.0 24.6 24.4
(+)
SMBJ16 LN
LN
17.8
21.8
1.0 16 1.0 20.8 28.8
(+)
SMBJ16A LP
LM
17.8
19.7
1.0 16
1.0 23.1 26.0
(+)
SMBJ17 LQ
LQ
18.9
23.1
1.0 17 1.0 19.7 30.5
(+)
SMBJ17A LR
LR
18.9
20.9
1.0 17
1.0 21.7 27.6
(+)
SMBJ18 LS
BS
20.0
24.4
1.0 18 1.0 18.6 32.2
(+)
SMBJ18A LT
BT
20.0
22.1
1.0 18
1.0 20.5 29.2
(+)
SMBJ20 LU
LU
22.2
27.1
1.0 20 1.0 16.8 35.8
(+)
SMBJ20A LV
LV
22.2
24.5
1.0 20
1.0 18.5 32.4
(+)
SMBJ22 LW
BW
24.4
29.8
1.0 22 1.0 15.2 39.4
(+)
SMBJ22A LX
BX
24.4
26.9
1.0 22
1.0 16.9 35.5
(+)
SMBJ24 LY
BY
26.7
32.6
1.0 24 1.0 14.0 43.0
(+)
SMBJ24A LZ
BZ
26.7
29.5
1.0 24
1.0 15.4 38.9
(+)
SMBJ26 MD
CD
28.9
35.3
1.0 26 1.0 12.9 46.6
(+)
SMBJ26A ME
CE
28.9
31.9
1.0 26
1.0
14.3 42.1
(+)
SMBJ28 MF
MF
31.1
38.0
1.0 28 1.0 12.0 50.0
(+)
SMBJ28A MG
MG
31.1
34.4
1.0 28
1.0
13.2 45.4
(+)
SMBJ30 MH
CH
33.3
40.7
1.0 30 1.0 11.2 53.5
(+)
SMBJ30A MK
CK
33.3
36.8
1.0 30
1.0
12.4 48.4
(+)
SMBJ33 ML
CL
36.7
44.9
1.0 33 1.0 10.2 59.0
(+)
SMBJ33A MM
CM
36.7
40.6
1.0 33
1.0
11.3 53.3
(+)
SMBJ36 MN
CN
40.0
48.9
1.0 36 1.0 9.3 64.3
(+)
SMBJ36A MP
CP
40.0
44.2
1.0 36
1.0
10.3 58.1
(+)
SMBJ40 MQ
CQ
44.4
54.3
1.0 40 1.0 8.4 71.4
(+)
SMBJ40A MR
CR
44.4
49.1
1.0 40
1.0
9.3
64.5
Document Number 88392
08-Sep-06
www.vishay.com
3
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Note:
(1) Pulse test: t
p
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum V
(BR)
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 50 A (uni-directional only)
(+)
Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(+)
SMBJ43 MS
CS
47.8
58.4
1.0 43 1.0 7.8 76.7
(+)
SMBJ43A MT
CT
47.8
52.8
1.0 43
1.0
8.6 69.4
(+)
SMBJ45 MU
MU
50.0
61.1
1.0 45 1.0 7.5 80.3
(+)
SMBJ45A MV
MV
50.0
55.3
1.0 45
1.0
8.3
72.7
(+)
SMBJ48 MW
MW
53.3
65.1
1.0 48 1.0 7.0 85.5
(+)
SMBJ48A MX
MX
53.3
58.9
1.0 48
1.0
7.8
77.4
(+)
SMBJ51 MY
MY
56.7
69.3
1.0 51 1.0 6.6 91.1
(+)
SMBJ51A MZ
MZ
56.7
62.7
1.0 51
1.0
7.3 82.4
(+)
SMBJ54 ND
ND
60.0
73.3
1.0 54 1.0 6.2 96.3
(+)
SMBJ54A NE
NE
60.0
66.3
1.0 54
1.0
6.9 87.1
(+)
SMBJ58 NF
NF
64.4
78.7
1.0 58 1.0 5.8 103
(+)
SMBJ58A NG
NG
64.4
71.2
1.0 58
1.0
6.4
93.6
(+)
SMBJ60 NH
NH
66.7
81.5
1.0 60 1.0 5.6 107
(+)
SMBJ60A NK
NK
66.7
73.7
1.0 60
1.0
6.2 96.8
(+)
SMBJ64 NL
NL
71.1
86.9
1.0 64 1.0 5.3 114
(+)
SMBJ64A NM
NM
71.1
78.6
1.0 64
1.0
5.8
103
(+)
SMBJ70 NN
NN
77.8
95.1
1.0 70 1.0 4.8 125
(+)
SMBJ70A NP
NP
77.8
86.0
1.0 70
1.0
5.3
113
(+)
SMBJ75 NQ
NQ
83.3
102
1.0 75 1.0 4.5 134
(+)
SMBJ75A NR
NR
83.3
92.1
1.0 75
1.0
5.0
121
(+)
SMBJ78 NS
NS
86.7
106
1.0 78 1.0 4.3 139
(+)
SMBJ78A NT
NT
86.7
95.8
1.0 78
1.0
4.8
126
(+)
SMBJ85 NU
NU
94.4
115
1.0 85 1.0 4.0 151
(+)
SMBJ85A NV
NV
94.4
104
1.0 85
1.0
4.4
137
(+)
SMBJ90 NW
NW
100
122
1.0 90 1.0 3.8 160
(+)
SMBJ90A NX
NX
100
111
1.0 90
1.0
4.1
146
(+)
SMBJ100 NY
NY
111
136
1.0 100 1.0
3.4 179
(+)
SMBJ100A NZ
NZ
111
123 1.0 100
1.0
3.7
162
(+)
SMBJ110 PD
PD
122
149
1.0 110 1.0
3.1 196
(+)
SMBJ110A PE
PE
122
135 1.0 110
1.0
3.4
177
(+)
SMBJ120 PF
PF
133
163
1.0 120 1.0
2.8 214
(+)
SMBJ120A PG
PG
133
147 1.0
120
1.0
3.1
193
(+)
SMBJ130 PH
PH
144
176
1.0 130 1.0
2.6 231
(+)
SMBJ130A PK
PK
144
159 1.0 130
1.0
2.9
209
(+)
SMBJ150 PL
PL
167
204
1.0 150 1.0
2.2 268
(+)
SMBJ150A PM
PM
167
185 1.0
150
1.0
2.5
243
(+)
SMBJ160 PN
PN
178
218
1.0 160 1.0
2.1 287
(+)
SMBJ160A PP
PP
178
197 1.0 160
1.0
2.3
259
(+)
SMBJ170 PQ
PQ
189
231
1.0 170 1.0
2.0
304
(+)
SMBJ170A PR
PR
189
209 1.0 170
1.0
2.2
275
SMBJ188 PT
PT
209
255
1.0
188 1.0 1.7 344
SMBJ188A PS
PS
209
231
1.0 188 1.0 2.0 328
ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
DEVICE TYPE
MODIFIED
"J" BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
V
(BR)
AT I
T
(1)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
UNI
BI
MIN MAX
www.vishay.com
4
Document Number 88392
08-Sep-06
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C unless otherwise noted)
THERMAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
(1)
R
JA
100 C/W
Typical thermal resistance, junction to lead
R
JL
20 C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
SMBJ5.0A-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
0.1
1
10
100
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
P
PPM
, P
e
ak P
u
lse P
o
w
er (k
W
)
td - Pulse Width (s)
0
25
50
75
100
100
75
50
25
0
125
150
175
200
T
J
- Initial Temperature (C)
Pe
a
k
P
u
lse P
o
w
er (P
PP
) or C
u
rrent (I
PP
)
Der
ating in P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0 4.0
I
PPM
- P
e
ak P
u
lse C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 sec Waveform
as defined by R.E.A.
T
j
= 25 C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of I
PPM
10
100
1000
6000
10
1
100
200
Uni-Directional
Bi-Directional
C
J
, J
u
nction Capacitance (pF)
V
WM
- Reverse Stand-off Voltage (V)
T
j
= 25 C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
V
R
, Measured at Stand-off
Voltage V
WM
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Document Number 88392
08-Sep-06
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance
0.1
1.0
10
100
0.001
0.01
0.1
100
1.0
10
1000
tp - Pulse Duration (s)
T
r
ansient Ther
mal Impedance (C/
W
)
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
10
200
100
100
10
1
8.3 ms Single Half Sine-Wave
Unidirectional Only
Number of Cycles at 60 Hz
P
eak F
o
r
w
ard S
u
rge C
u
rrent (A)
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
DO-214AA (SMB-J-Bend)
0.085 MAX.
(2.159 MAX.)
0.220 REF
0.086 MIN.
(2.18 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout