TSOP98200
Document Number 84795
Rev. 1.1, 22-Jan-07
Vishay Semiconductors
www.vishay.com
1
19026
IR Sensor Module for Remote Control Systems
Description
The TSOP98200 is a miniaturized sensor for receiv-
ing the modulated signal of infrared remote control
systems. A PIN diode and preamplifier are assembled
on a lead frame, the epoxy package is designed as an
IR filter. The modulated output signal, Carrier Out,
can be used for code learning applications
.
This component has not been qualified according to
automotive specifications.
Features
Photo detector and preamplifier in one
package
AC coupled response from
20 kHz - 455 kHz, all data formats
Improved shielding against electrical
field disturbance
TTL and CMOS compatibility
Output active low
Supply voltage: 2.7 V to 5.5 V
Carrier Out signal for code learning functions
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Block Diagram
Mechanical Data
Pin Description:
1 = Carrier OUT, 2 = GND, 3 = V
S
Application Circuit
TIA
Amp
Signal Shaping
1 Carrier Out
19746
2 Gnd
3 Vs
C
1
=
4.7 F
TSOPxxx x
OUT
GND
Circ
u
it
C
R
1
= 100
+ V
S
GND
Transmitte r
with
TSALxxxx
V
S
R
1
+ C
1
recommended to suppress power supply
disturbances.
V
O
19750
e3
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2
Document Number 84795
Rev. 1.1, 22-Jan-07
TSOP98200
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Electrical and Optical Characteristics Carrier Out
T
amb
= 25 C, unless otherwise specified
V
S
= 3 V
* These irradiance values are guaranteed to 60 kHz. The TSOP98200 will continue to function up to frequencies higher than 600 kHz,
however the irradiance at frequencies above 60 kHz is dependent on the carrier frequency and the pulse pattern received.
Typical E
emin
= 2 W/m
2
at 455 kHz.
Parameter
Test condition
Symbol
Value
Unit
Supply Voltage
(Pin 3)
V
S
- 0.3 to + 5.5
V
Output Voltage
(Pin 1)
V
O
- 0.3 to
(V
S
+ 0.3)
V
Output Current
(Pin 1)
I
O
10
mA
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
- 25 to + 85
C
Operating Temperature Range
T
amb
- 25 to + 85
C
Soldering Temperature
t
10 s, 1 mm from case
T
sd
260
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Supply Current (Pin 3)
E
v
= 0
I
SD
0.6
0.8
mA
Supply Voltage
V
S
2.7
5.5
V
Output Voltage Low (Pin 1)
I
OSL
= 0.5 mA,
test signal see fig. 1
V
OSL
250
mV
Maximum Irradiance
test signal see fig. 1
(20 - 60* kHz)
E
e max
300
500
W/m
2
Directivity
Angle of half transmission
distance
1/2
45
deg
Transmission Distance
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 400 mA
d
1
m
Threshold Irradiance
V
S
= 3 V
(20 - 60* kHz)
E
e min
0.3
0.5
W/m
2
Carrier Out rise time
Vs = 3 V, C
L
= 10 pF
T
R
100
ns
Carrier Out fall time
Vs = 3 V, C
L
= 10 pF
T
F
10
ns
Output pulse width
T
PI
= 10 s, C
L
= 10 pF
T
PO
0.6
1.1
1.6
s
TSOP98200
Document Number 84795
Rev. 1.1, 22-Jan-07
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
T
amb
= 25 C, unless otherwise specified
Figure 1. Carrier Output Pulse Diagram
Figure 2. Carrier Output Function Diagram
Figure 3. Relative Spectral Sensitivity vs. Wavelength
Ee
VOC
Optical Test Signal
Output Signal
IR emitting diode TSAL6200, IF = 0.4 A, f = 38 kHz
tdC
tpoc
t
t
note: Output signal switches on
the falling edge of input signal
19703
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0.1
1
10
100
1000
Ee - Irradiance (W/m)
td
c
,
tp
o
c
-
O
u
tp
u
t P
u
ls
e Lengt
h (
s
)
optical test signal, fig. 1
Delay time - tdc
Output pulse width - tpoc
19704
750
850
950
1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) - Relati
v
e Spectral Sensiti
v
ity
rel
- Wavelength (nm)
1150
94 8408
1.0
Figure 4. Horizontal Directivity
x
Figure 5. Vertical Directivity
y
19258
0.4
0.2
0
0.2
0.4
0.6
0.6
0.9
0
30
10
20
40
50
60
70
80
1.0
0.8
0.7
d
rel
- Relative Transmission Distance
19259
0.4
0.2
0
0.2
0.4
0.6
0.6
0.9
0
30
10
20
40
50
60
70
80
1.0
0.8
0.7
d
rel
- Relative Transmission Distance
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4
Document Number 84795
Rev. 1.1, 22-Jan-07
TSOP98200
Vishay Semiconductors
Package Dimensions in mm
19009
TSOP98200
Document Number 84795
Rev. 1.1, 22-Jan-07
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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