FEATURES
D
TrenchFET
r
Power MOSFETS
D
175
_
C Junction Temperature
SUB45N03-13L
Vishay Siliconix
Document Number: 71740
S-05010--Rev. G, 05-Nov-01
www.vishay.com
1
N-Channel 30-V (D-S), 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
30
0.013 @ V
GS
= 10 V
45
a
30
0.02 @ V
GS
= 4.5 V
45
a
D
G
S
N-Channel MOSFET
SUB45N03-13L
TO-263
S
G
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 25
_
C
I
D
45
a
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 125
_
C
I
D
34
a
A
Pulsed Drain Current
I
DM
100
A
Avalanche Current
I
AR
45
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
100
mJ
Maximum Power Dissipation
b
T
C
= 25
_
C
P
D
88
c
W
Maximum Power Dissipation
b
T
A
= 25
_
C
d
P
D
3.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount
d
R
thJA
40
_
C/W
Junction-to-Case (Drain)
R
thJC
1.7
_
C/W
Notes
a.
Package limited.
b.
Duty cycle
v
1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
SUB45N03-13L
Vishay Siliconix
www.vishay.com
2
Document Number: 71740
S-05010--Rev. G, 05-Nov-01
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250
m
A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 30 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125
_
C
50
mA
g
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175
_
C
150
m
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
45
A
V
GS
= 10 V, I
D
= 45 A
0.009
0.013
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 45 A, T
J
= 125
_
C
0.013
0.02
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 45 A, T
J
= 175
_
C
0.02
0.026
W
V
GS
= 4.5 V, I
D
= 20 A
0.0145
0.02
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 45 A
20
S
Dynamic
b
Input Capacitance
C
iss
2000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
pF
Reversen Transfer Capacitance
C
rss
180
Total Gate Charge
c
Q
g
40
70
Gate-Source Charge
c
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 45 A
7.5
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
8
Turn-On Delay Time
c
t
d(on)
11
20
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.33
W
9
20
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 15 V, R
L
= 0.33
W
I
D
]
45 A, V
GEN
= 10 V, R
G
= 2.5
W
38
70
ns
Fall Time
c
t
f
D
GEN
G
11
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
s
45
A
Pulsed Current
I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V
1
1.3
V
Reverse Recovery Time
t
rr
35
70
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 45 A, di/dt = 100 A/
m
s
1.7
A
Reverse Recovery Charge
Q
rr
F
,
m
0.03
m
C
Notes:
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
e.
Guaranteed by design, not subject to production testing.
b.
Independent of operating temperature.
SUB45N03-13L
Vishay Siliconix
Document Number: 71740
S-05010--Rev. G, 05-Nov-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
0
6
12
18
24
30
0
2
4
6
8
10
0
10
20
30
40
0
20
40
60
80
0
20
40
60
80
0.00
0.01
0.02
0.03
0.04
0.05
0
20
40
60
80
0
20
40
60
80
100
0
1
2
3
4
5
0
30
60
90
120
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
V
GS
- Gate-to-Source Voltage (V)
-
T
ransconductance
(S)
g
fs
25
_
C
-55
_
C
3 V
T
C
= 125
_
C
V
DS
= 15 V
I
D
= 45 A
V
GS
= 10 thru 6 V
5 V
V
GS
= 10 V
C
iss
C
oss
C
rss
T
C
= -55
_
C
25
_
C
125
_
C
4 V
V
GS
= 4.5 V
-
On-Resistance (
r
DS(on)
W
)
-
Drain Current (A)
I
D
2 V
SUB45N03-13L
Vishay Siliconix
www.vishay.com
4
Document Number: 71740
S-05010--Rev. G, 05-Nov-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.9
1.3
1.7
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (
_
C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 45 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
THERMAL RATINGS
0
10
20
30
40
50
60
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
200
10
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
C
= 25
_
C
Single Pulse
Maximum Drain Current vs.
Case Temperature
T
C
- Case Temperature (
_
C)
-
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
3
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
-
Drain Current (A)
I
D
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