SUP/SUB85N06-05
Vishay Siliconix
New Product
Document Number: 71113
S-20556--Rev. C, 22-Apr-02
www.vishay.com
2-1
N-Channel 60-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
0.0052 @ V
GS
= 10 V
"
60
0.0072 @ V
GS
= 4.5 V
"
85
a
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
DRAIN connected to TAB
TO-263
S
D
G
Top View
SUP85N06-05
SUB85N06-05
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
"
20
V
_
T
C
= 25
_
C
"
85
a
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 125
_
C
I
D
"
85
a
Pulsed Drain Current
I
DM
"
240
A
Avalanche Current
I
AR
"
75
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
280
mJ
T
C
= 25
_
C (TO-220AB and TO-263)
250
c
Maximum Power Dissipation
b
T
A
= 25
_
C (TO-263)
d
P
D
3.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
PCB Mount (TO-263)
d
40
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
_
C/W
Junction-to-Case
R
thJC
0.6
C/W
Notes
a.
Package limited.
b.
Duty cycle
v
1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1" square PCB (FR-4 material).
SUP/SUB85N06-05
Vishay Siliconix
New Product
www.vishay.com
2-2
Document Number: 71113
S-20556--Rev. C, 22-Apr-02
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250
m
A
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 48 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 175
_
C
250
m
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0044
0.0052
a
V
GS
= 4.5 V, I
D
=
20 A
0.0059
0.0072
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
_
C
0.0085
W
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
_
C
0.010
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
7560
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1050
pF
Reverse Transfer Capacitance
C
rss
570
Total Gate Charge
c
Q
g
155
220
Gate-Source Charge
c
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 85 A
28
nC
Gate-Drain Charge
c
Q
gd
DS
GS
D
44
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
DD
= 30 V, R
L
= 0.4
W
90
130
Turn-Off Delay Time
c
t
d(off)
V
DD
= 30 V, R
L
= 0.4
W
I
D
^
85 A, V
GEN
= 10 V, R
G
= 2.5
W
95
140
ns
Fall Time
c
t
f
105
150
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
S
75
Pulsed Current
I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.1
1.4
V
Reverse Recovery Time
t
rr
50
85
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 85 A, di/dt = 100 A/
m
s
2.7
5
A
Reverse Recovery Charge
Q
rr
0.067
0.21
m
C
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUP/SUB85N06-05
Vishay Siliconix
New Product
Document Number: 71113
S-20556--Rev. C, 22-Apr-02
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2000
4000
6000
8000
10000
12000
0
6
12
18
24
30
0
4
8
12
16
20
0
60
120
180
240
300
0
50
100
150
200
250
0
20
40
60
80
100
0.000
0.002
0.004
0.006
0.008
0
20
40
60
80
100
120
0
40
80
120
160
200
0
1
2
3
4
5
0
50
100
150
200
250
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage (V)
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
V
GS
T
ransconductance
(S)
g
fs
25
_
C
55
_
C
3 V
T
C
= 125
_
C
V
GS
= 30 V
I
D
= 85 A
V
GS
= 10 thru 5 V
V
GS
= 10 V
C
iss
C
oss
T
C
= 55
_
C
25
_
C
125
_
C
4 V
V
GS
= 4.5 V
On-Resistance (
r
DS(on)
W
)
Drain Current (A)
I
D
C
rss
I
D
Drain Current (A)
SUP/SUB85N06-05
Vishay Siliconix
New Product
www.vishay.com
2-4
Document Number: 71113
S-20556--Rev. C, 22-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 85 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
On-Resistance (
r
DS(on)
W
)
0
40
50
60
70
80
50
25
0
25
50
75
100
125
150
175
T
J
Junction Temperature (
_
C)
t
in
(Sec)
1000
10
0.0001
0.001
0.1
1
0.1
(a)
I
Dav
0.01
I
AV
(A) @ T
A
= 150
_
C
(V)
V
(BR)DSS
I
D
= 250
m
A
100
1
I
AV
(A) @ T
A
= 25
_
C
SUP/SUB85N06-05
Vishay Siliconix
New Product
Document Number: 71113
S-20556--Rev. C, 22-Apr-02
www.vishay.com
2-5
THERMAL RATINGS
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
Limited
by r
DS(on)
0.1
100
T
C
= 25
_
C
Single Pulse
Maximum Drain Current vs.
Case Temperature
T
C
Ambient Temperature (
_
C)
Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
10
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
1
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