FEATURES
D
TrenchFET
r
Power MOSFETS
D
175
_
C Rated Maximum Junction Temperature
D
Low Input Capacitance
APPLICATIONS
D
Automotive Fuel Injection Systems
D
Automotive Wipers
D
Automotive Door Modules
SUD35N05-26L
Vishay Siliconix
New Product
Document Number: 71443
S-03485--Rev. A,16-Apr-01
www.vishay.com
1
N-Channel 55-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
a
0.020 @ V
GS
= 10 V
35
55
0.026 @ V
GS
= 4.5 V
30
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD35N05-26L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
55
Gate-Source Voltage
V
GS
"
20
V
_
T
C
= 25
_
C
35
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 100
_
C
I
D
25
Pulsed Drain Current
I
DM
80
A
Continuous Source Current (Diode Conduction)
a
I
S
35
T
C
= 25
_
C
50
c
Maximum Power Dissipation
T
A
= 25
_
C
P
D
7.5
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
v
10 sec
17
20
Junction-to-Ambient
b
Steady State
R
thJA
50
60
_
Junction-to-Case
R
thJC
2.5
3.0
_
C/W
Junction-to-Lead
R
thJL
5.0
6.0
Notes
a.
Package Limited.
b.
Surface Mounted on 1" x1" FR4 Board, t
v
10 sec.
c.
See SOA curve for voltage derating.
SUD35N05-26L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71443
S-03485--Rev. A,16-Apr-01
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
55
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 44 V, V
GS
= 0 V
1
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 44 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 5 V
35
A
V
GS
= 10 V, I
D
= 20 A
0.0165
0.020
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
_
C
0.035
W
DS(on)
V
GS
= 4.5 V, I
D
= 15 A
0.0215
0.026
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
25
S
Dynamic
a
Input Capacitance
C
iss
885
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
185
pF
Reverse Transfer Capacitance
C
rss
80
Total Gate Charge
c
Q
g
10.5
13
Gate-Source Charge
c
Q
gs
V
DS
= 25 V,
V
GS
= 5 V, I
D
= 35 A
4
nC
Gate-Drain Charge
c
Q
gd
DS
GS
D
4.8
Turn-On Delay Time
c
t
d(on)
5
8
Rise Time
c
t
r
V
DD
= 25 V, R
L
= 0.3
W
18
30
Turn-Off Delay Time
c
t
d(off)
V
DD
= 25 V, R
L
= 0.3
W
I
D
^
35 A, V
GEN
= 10 V, R
G
= 2.5
W
20
30
ns
Fall Time
c
t
f
100
150
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Continuous Current
I
S
35
Pulsed Current
I
SM
80
A
Diode Forward Voltage
b
V
SD
I
F
= 80 A, V
GS
= 0 V
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 35 A, di/dt = 100 A/
m
s
25
40
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
c.
Independent of operating temperature.
SUD35N05-26L
Vishay Siliconix
New Product
Document Number: 71443
S-03485--Rev. A,16-Apr-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.00
0.01
0.02
0.03
0.04
0
20
40
60
80
100
0
4
8
12
16
20
0
10
20
30
40
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
0
2
4
6
8
10
0
10
20
30
40
50
60
0
20
40
60
80
100
0
300
600
900
1200
1500
0
11
22
33
44
55
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage (V)
On-Resistance (
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C
Capacitance (pF)
r DS(on)
W
)
V
GS
T
ransconductance
(S)
g
fs
25
_
C
125
_
C
5 V
T
C
= 55
_
C
V
DS
= 25 V
I
D
= 35 A
V
GS
= 10 thru 6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= 55
_
C
25
_
C
125
_
C
4 V
C
oss
C
iss
I
D
Drain Current (A)
3 V
2 V
SUD35N05-26L
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71443
S-03485--Rev. A,16-Apr-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
(Normalized)
On-Resistance (
r DS(on)
W
)
0.0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
Source Current (A)
I
S
100
10
1
0.2
0.4
0.6
0.8
1.2
V
GS
= 10 V
I
D
= 20 A
T
J
= 25
_
C
T
J
= 175
_
C
0
1.0
THERMAL RATINGS
0
10
20
30
40
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I D
500
10
0.1
0.1
1
10
100
1
100
T
C
= 25
_
C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
Maximum Avalanche Drain Current vs.
Case Temperature
T
C
Case Temperature (
_
C)
Drain Current (A)
ID
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
10
m
s
10 ms
100 ms
dc
1 s
30
Limited
by r
DS(on)
100
m
s
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