SUD40N03-18P
Vishay Siliconix
New Product
Document Number: 71086
S-63636--Rev. A, 08-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel 30-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
a
30
0.018 @ V
GS
= 10 V
"
40
30
0.027 @ V
GS
= 4.5 V
"
34
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD40N03-18P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 25
_
C
I
D
"
40
A
Continuous Drain Current (T
J
= 175
_
C)
b
T
C
= 100
_
C
I
D
"
28
A
Pulsed Drain Current
I
DM
"
100
A
Continuous Source Current (Diode Conduction)
a
I
S
40
Maximum Power Dissipation
T
C
= 25
_
C
P
D
62.5
c
W
Maximum Power Dissipation
T
A
= 25
_
C
P
D
7.5
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
b
t
v
10 sec
R
thJA
17
20
_
C/W
Junction-to-Ambient
b
Steady State
R
thJA
50
60
_
C/W
Junction-to-Case
R
thJC
2
2.4
Junction-to-Lead
R
thJL
4
4.8
_
C/W
Notes
a.
Package Limited.
b.
Surface Mounted on 1" x1" FR4 Board, t
v
10 sec.
c.
See SOA curve for voltage derating.
SUD40N03-18P
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71086
S-63636--Rev. A, 08-Nov-99
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
40
A
D i S
O S
R
i
b
V
GS
= 10 V, I
D
= 20 A
0.014
0.018
W
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
_
C
0.029
W
V
GS
= 4.5 V, I
D
= 10 A
0.021
0.027
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
10
S
Dynamic
a
Input Capacitance
C
iss
V
0 V V
25 V F
1 MH
1300
F
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
340
pF
Reverse Transfer Capacitance
C
rss
95
Total Gate Charge
c
Q
g
V
15 V V
10 V I
40 A
19
30
C
Gate-Source Charge
c
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 40 A
5
nC
Gate-Drain Charge
c
Q
gd
3
Turn-On Delay Time
c
t
d(on)
V
15 V R
0 37
W
8
12
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.37
W
I
40 A V
10 V R
2 5
W
8.5
13
ns
Turn-Off Delay Time
c
t
d(off)
DD
,
L
I
D
^
40 A, V
GEN
= 10 V, R
G
= 2.5
W
17
25
ns
Fall Time
c
t
f
6
9
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Continuous Current
I
S
40
A
Pulsed Current
I
SM
80
A
Diode Forward Voltage
b
V
SD
I
F
= 100 A, V
GS
= 0 V
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/
m
s
30
50
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
c.
Independent of operating temperature.
SUD40N03-18P
Vishay Siliconix
New Product
Document Number: 71086
S-63636--Rev. A, 08-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0
20
40
60
80
100
120
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
I
D
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
On-Resistance (
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
r DS(on)
W
)
V
GS
T
ransconductance
(S)
g
fs
0
40
80
120
160
0
2
4
6
8
10
0
4
8
12
16
20
0
10
20
30
40
0
0.01
0.02
0.03
0.04
0.05
0.06
0
20
40
60
80
100
120
0
40
80
120
160
0
2
4
6
8
10
25
_
C
125
_
C
5 V
T
C
= 55
_
C
V
DS
= 15 V
I
D
= 40 A
V
GS
= 10 thru 8 V
6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= 55
_
C
25
_
C
125
_
C
2, 3 V
4 V
C
oss
C
iss
I
D
Drain Current (A)
6 V
SUD40N03-18P
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71086
S-63636--Rev. A, 08-Nov-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(Normalized)
On-Resistance (
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
r DS(on)
W
)
Source Current (A)
I
S
0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
175
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 40 A
T
J
= 25
_
C
T
J
= 175
_
C
0
THERMAL RATINGS
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
Drain Current (A)
ID
500
10
0.1
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
C
= 25
_
C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
Maximum Avalanche Drain Current vs.
Case Temperature
T
C
Case Temperature (
_
C)
Drain Current (A)
ID
0
10
20
30
40
50
0
25
50
75
100
125
150
175
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10, 100
m
s
1 s
30
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