FEATURES
D
TrenchFET
r
Power MOSFET
D
175
_
C Junction Temperature
D
PWM Optimized for High Efficiency
APPLICATIONS
D
Synchronous Buck DC/DC Conversion
- Desktop
- Server
SUD50N024-06P
Vishay Siliconix
New Product
Document Number: 72289
S-31398--Rev. A, 30-Jun-03
www.vishay.com
1
N-Channel 22-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
d
24
C
0.006 @ V
GS
= 10 V
80
24
C
0.0095 @ V
GS
= 4.5 V
64
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD50N024-06P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Pulse Voltage
V
DS(pulse)
24
C
Drain-Source Voltage
V
DS
22
V
Gate-Source Voltage
V
GS
"
20
Continuous Drain Current
a
T
C
= 25
_
C
I
D
80
d
Continuous Drain Current
a
T
C
= 100
_
C
I
D
56
d
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
26
Avalanche Current, Single Pulse
L = 0.1 mH
I
AS
45
Avalanche Energy, Single Pulse
E
AS
101
mJ
Maximum Power Dissipation
T
A
= 25
_
C
P
D
6.8
a
W
Maximum Power Dissipation
T
C
= 25
_
C
P
D
65
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
a
t
v
10 sec
R
18
22
Maximum Junction-to-Ambient
a
Steady State
R
thJA
40
50
_
C/W
Maximum Junction-to-Case
R
thJC
1.9
2.3
C/W
Notes
a.
Surface Mounted on FR4 Board, t
v
10 sec.
b.
Limited by package
c.
Pulse condition: T
A
= 105
_
C, 50 ns, 300 kHz operation
d.
Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
SUD50N024-06P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72289
S-31398--Rev. A, 30-Jun-03
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
22
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.8
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
m
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 20 A
0.0046
0.006
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
_
C
0.0084
W
Drain Source On State Resistance
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0073
0.0095
W
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
15
S
Dynamic
a
Input Capacitance
C
iss
2550
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
900
pF
Reverse Transfer Capacitance
C
rss
415
p
Gate Resistance
R
G
1.5
W
Total Gate Charge
c
Q
g
19
30
Gate-Source Charge
c
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 50 A
7.5
nC
Gate-Drain Charge
c
Q
gd
V
DS
10 V,
V
GS
4.5 V, I
D
50 A
6.0
nC
Turn-On Delay Time
c
t
d(on)
11
20
Rise Time
c
t
r
V
DD
= 10 V, R
L
= 0.2
W
10
15
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 10 V, R
G
= 2.5
W
24
35
ns
Fall Time
c
t
f
9
15
Source-Drain Diode Ratings and Characteristic (T
C
= 25
_
C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
b
V
SD
I
F
= 50 A, V
GS
= 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/
m
s
35
70
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
c.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
25
_
C
-55
_
C
2 V
T
C
= 125
_
C
V
GS
= 10 thru 5 V
3 V
4 V
SUD50N024-06P
Vishay Siliconix
New Product
Document Number: 72289
S-31398--Rev. A, 30-Jun-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000
0.002
0.004
0.006
0.008
0.010
0
20
40
60
80
100
0
2
4
6
8
10
0
8
16
24
32
40
0
20
40
60
80
100
0
10
20
30
40
50
0
500
1000
1500
2000
2500
3000
3500
0
4
8
12
16
20
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
-
Gate-to-Source V
oltage
(V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r DS(on)
W
)
V
GS
-
T
ransconductance
(S)
g
fs
V
DS
= 10 V
I
D
= 50 A
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= -55
_
C
25
_
C
125
_
C
C
iss
I
D
- Drain Current (A)
C
oss
(Normalized)
-
On-Resistance (
r DS(on)
W
)
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (
_
C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I S
100
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 30 A
T
J
= 25
_
C
T
J
= 150
_
C
0
10
V
GS
= 6.3 V
SUD50N024-06P
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72289
S-31398--Rev. A, 30-Jun-03
THERMAL RATINGS
0
8
16
24
32
40
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
ID
1000
10
0.01
0.1
1
10
100
1
100
T
A
= 25
_
C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
Maximum Drain Current vs.
Ambiemt Temperature
T
A
- Ambient Temperature (
_
C)
-
Drain Current (A)
ID
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10, 100
m
s
1 s
1000
100
0.1
10 s
100 s
Limited
by r
DS(on)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
0.2
0.1
Duty Cycle = 0.5
100
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
0.05
0.02
Single Pulse
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