FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R
g
Tested
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272--Rev. E, 23-Feb-04
www.vishay.com
1
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
30
0.007 @ V
GS
= 10 V
20
30
0.010 @ V
GS
= 4.5 V
16
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-07
SUD50N03-07--E3 ( Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
a
T
A
= 25_C
I
D
20
Continuous Drain Current
a
T
A
= 100_C
I
D
14
A
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
20
Maximum Power Dissipation
T
C
= 25_C
P
D
136
W
Maximum Power Dissipation
T
A
= 25_C
P
D
5
a
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
R
thJA
30
_C/W
Maximum Junction-to-Case
R
thJC
0.85
1.1
_C/W
Notes
a.
Surface Mounted on FR4 Board, t v 10 sec.
SUD50N03-07
Vishay Siliconix
www.vishay.com
2
Document Number: 70767
S-40272--Rev. E, 23-Feb-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1.0
2.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
mA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
50
mA
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
=20 A
0.007
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
=20 A, T
J
= 125_C
0.011
W
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.010
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
20
S
Dynamic
a
Input Capacitance
C
iss
5600
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1100
pF
Reverse Transfer Capacitance
C
rss
450
Total Gate Charge
c
Q
g
70
130
Gate-Source Charge
c
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 50 A
16
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
10
Gate Resistance
R
g
0.5
3.1
W
Turn-On Delay Time
c
t
d(on)
14
30
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.3 W
11
20
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 15 V, R
L
= 0.3 W
I
D
^ 50 A, V
GEN
= 10 V, R
g
= 2.5 W
60
120
ns
Fall Time
c
t
f
15
40
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
b
V
SD
I
F
= 100 A, V
GS
= 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
55
100
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v
300 ms, duty cycle v
2%.
c.
Independent of operating temperature.
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272--Rev. E, 23-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
50
100
150
200
250
0
2
4
6
8
10
0
4
8
12
16
20
0
30
60
90
120
0.0000
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0
20
40
60
80
100
0
20
40
60
80
100
0
1
2
3
4
5
0
30
60
90
120
0
10
20
30
40
50
0
2000
4000
6000
8000
0
5
10
15
20
25
30
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I D
-
Gate-to-Source V
oltage (V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r DS(on)
W
)
V
GS
-
T
ransconductance
(S)
g
fs
25_C
-55_C
5 V
T
C
= 125_C
V
DS
= 15 V
I
D
= 45 A
V
GS
= 10, 9, 8, 7, 6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= -55_C
25_C
125_C
3 V
C
iss
I
D
- Drain Current (A)
4 V
SUD50N03-07
Vishay Siliconix
www.vishay.com
4
Document Number: 70767
S-40272--Rev. E, 23-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I S
100
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 45 A
T
J
= 25_C
T
J
= 150_C
0
r
DS
(
on)
-
On-Resiistance
(Normalized)
THERMAL RATINGS
0
4
8
12
16
20
24
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
ID
500
10
0.1
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
A
= 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Normalized Ef
fective
T
ransient
Thermal Impedance
Maximum Drain Current vs.
Ambiemt Temperature
T
A
- Ambient Temperature (_C)
-
Drain Current (A)
ID
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
dc
10, 100 ms
1 s
500
100
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