FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
APPLICATIONS
D Automotive Such As:
- High-Side Switch
- Motor Drives
- Valve Drives
SUD50N04-05L
Vishay Siliconix
New Product
Document Number: 72786
S-40444--Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(W)
I
D
(A)
c
40
0.0054 @ V
GS
= 10 V
115
40
0.0069 @ V
GS
= 4.5 V
102
D
G
S
TO-252
S
G
D
Top View
Drain Connected to Tab
N-Channel MOSFET
Ordering Information: SUD50N04-05L--E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 175_C)
T
C
= 25_C
I
D
115
c
Continuous Drain Current
(T
J
= 175_C)
T
C
= 100_C
I
D
81
c
A
Pulsed Drain Current
I
DM
100
A
Single Pulse Avalanche Current
L = 0 1 mH
I
AS
50
Single Pulse Repetitive Avalanche Energy
a
L = 0.1 mH
E
AS
125
mJ
Power Dissipation
T
C
= 25_C
P
D
136
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
J
ti
t A bi t
b
t v 10 sec
R
15
18
Junction-to-Ambient
b
Steady State
R
thJA
40
50
_C/W
Junction-to-Case
R
thJC
0.85
1.1
C/W
Notes:
a.
Duty cycle v 1%.
b.
Surface mounted on 1" FR4 board.
c.
Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
SUD50N04-05L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72786
S-40444--Rev. A, 15-Mar-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 mA
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= 40 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125_C
50
mA
g
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
150
m
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 20 A
0.0044
0.0054
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
0.0083
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
0.0130
W
V
GS
= 4.5 V, I
D
= 20 A
0.0055
0.0069
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
20
80
S
Dynamic
b
Input Capacitance
C
iss
5600
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
590
pF
Reversen Transfer Capacitance
C
rss
365
Total Gate Charge
c
Q
g
90
135
Gate-Source Charge
c
Q
gs
V
DS
= 20 V,
V
GS
= 10 V, I
D
= 50 A
19
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
19
Gate Resistance
R
g
1.6
W
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
DD
= 20 V, R
L
= 0.4 W
20
30
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
20 V, R
L
0.4 W
I
D
] 50 A, V
GEN
= 10 V, R
g
= 2.5 W
65
100
ns
Fall Time
c
t
f
g
11
20
Source-Drain Ciode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
I
s
50
A
Pulsed Current
I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
0.90
1.50
V
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ms
30
45
ns
Notes:
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUD50N04-05L
Vishay Siliconix
New Product
Document Number: 72786
S-40444--Rev. A, 15-Mar-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0
20
40
60
80
100
0
1000
2000
3000
4000
5000
6000
7000
8000
0
8
16
24
32
40
0
40
80
120
160
200
0
10
20
30
40
50
60
0.000
0.002
0.004
0.006
0.008
0.010
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
2
4
6
8
10
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r
DS(on)
)
V
GS
V
GS
- Gate-to-Source Voltage (V)
-
T
ransconductance
(S)
g
fs
25_C
-55_C
3 V
T
C
= 125_C
V
DS
= 20 V
I
D
= 50 A
V
GS
= 10 thru 5 V
V
GS
= 10 V
C
iss
C
oss
C
rss
T
C
= -55
_
C
25
_
C
125
_
C
4 V
V
GS
= 4.5 V
SUD50N04-05L
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72786
S-40444--Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
= 20 A
T
J
= 25
_
C
T
J
= 150
_
C
r
DS
(
on)
-
On-Resiistance
(Normalized)
THERMAL RATINGS
0
25
50
75
100
125
0
25
50
75
100
125
150
175
T
C
= 25_C
Single Pulse
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
200
10
0.1
1
10
50
Limited by r
DS(on)
0.1
100
Maximum Avalanche and Drain Current vs.
Case Temperature
T
C
- Case Temperature (_C)
-
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10 ms
100 ms
1
Limited By Package
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
Normalized Ef
fective
T
ransient
Thermal Impedance
1
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
Single Pulse
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