FEATURES
D
TrenchFET
r
Power MOSFETS
D
175
_
C Junction Temperature
D
New Low Thermal Resistance Package
APPLICATIONS
D
Primary Side Switch
D
Plasma Display Panel Sustainer Function
SUM45N25-58
Vishay Siliconix
New Product
Document Number: 72314
S-31515--Rev. A, 14-Jul-03
www.vishay.com
1
N-Channel 250-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
250
0.058 @ V
GS
= 10 V
45
250
0.062 @ V
GS
= 6 V
43
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
Ordering Information: SUM45N25-58-
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
250
Gate-Source Voltage
V
GS
"
30
V
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 25
_
C
I
D
45
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 125
_
C
I
D
25
A
Pulsed Drain Current
I
DM
70
A
Avalanche Current
I
AR
35
Repetitive Avalanche Energy
a
L = 0.1 mH
E
AR
61
mJ
Maximum Power Dissipation
a
T
C
= 25
_
C
P
D
375
b
W
Maximum Power Dissipation
a
T
A
= 25
_
C
c
P
D
3.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
_
C/W
Junction-to-Case (Drain)
R
thJC
0.4
_
C/W
Notes
a.
Duty cycle
v
1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1" square PCB (FR-4 material).
SUM45N25-58
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72314
S-31515--Rev. A, 14-Jul-03
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250
m
A
250
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
2
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
30 V
"
250
nA
V
DS
= 200 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
g
DSS
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175
_
C
250
m
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
70
A
V
GS
= 10 V, I
D
= 20 A
0.047
0.058
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
_
C
0.121
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 175
_
C
0.163
W
V
GS
= 6 V, I
D
= 15 A,
0.049
0.062
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
70
S
Dynamic
b
Input Capacitance
C
iss
5000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
pF
Reverse Transfer Capacitance
C
rss
170
Total Gate Charge
c
Q
g
95
140
Gate-Source Charge
c
Q
gs
V
DS
= 125 V,
V
GS
= 10 V, I
D
= 45 A
28
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
34
Gate Resistance
R
g
f = 1 MHz
1.6
W
Turn-On Delay Time
c
t
d(on)
22
35
Rise Time
c
t
r
V
DD
= 100 V, R
L
= 2.78
W
220
330
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 100 V, R
L
= 2.78
W
I
D
^
45 A, V
GEN
= 10 V, R
G
= 2.5
W
40
60
ns
Fall Time
c
t
f
145
220
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
S
45
A
Pulsed Current
I
SM
70
A
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
150
225
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 45 A, di/dt = 100 A/
m
s
12
18
A
Reverse Recovery Charge
Q
rr
F
,
m
0.9
2
m
C
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUM45N25-58
Vishay Siliconix
New Product
Document Number: 72314
S-31515--Rev. A, 14-Jul-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1000
2000
3000
4000
5000
6000
7000
0
40
80
120
160
200
0
4
8
12
16
20
0
30
60
90
120
150
180
0
30
60
90
120
150
0
10
20
30
40
50
60
0.00
0.02
0.04
0.06
0.08
0.10
0
20
40
60
80
100
0
20
40
60
80
100
0
1
2
3
4
5
6
0
20
40
60
80
100
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
T
ransconductance
(S)
g
fs
25
_
C
-55
_
C
T
C
= 125
_
C
V
DS
= 125 V
I
D
= 45 A
V
GS
= 10 thru 7 V
V
GS
= 6 V
C
iss
C
oss
T
C
= -55
_
C
25
_
C
125
_
C
4 V
-
On-Resistance (
r
DS(on)
W
)
-
Drain Current (A)
I
D
I
D
- Drain Current (A)
6 V
C
rss
5 V
V
GS
= 10 V
SUM45N25-58
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72314
S-31515--Rev. A, 14-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (
_
C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 20 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
-
On-Resistance (
r
DS(on)
W
)
0
230
240
250
260
270
280
290
300
-50 -25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (
_
C)
t
in
(Sec)
100
10
0.00001
0.001
0.1
1
0.1
(a)
I
Dav
0.01
I
AV
(A) @ T
A
= 150
_
C
(V)
V
(BR)DSS
I
D
= 1.0 mA
1
0.0001
I
AV
(A) @ T
A
= 25
_
C
SUM45N25-58
Vishay Siliconix
New Product
Document Number: 72314
S-31515--Rev. A, 14-Jul-03
www.vishay.com
5
THERMAL RATINGS
0
10
20
30
40
50
0
25
50
75
100
125
150
175
Safe Operating Area, Case Temperature
V
DS
- Drain-to-Source Voltage (V)
100
10
0.1
1
10
1000
Limited
by r
DS(on)
0.1
T
C
= 25
_
C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
- Ambient Temperature (
_
C)
-
Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
-
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
Single Pulse
0.05
0.02
1
100
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