SUP/SUB85N03-07P
Vishay Siliconix
New Product
Document Number: 71147
S-00757--Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
2-1
N-Channel 30-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
a
30
0.007 @ V
GS
= 10 V
85
a
30
0.01 @ V
GS
= 4.5 V
75
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
DRAIN connected to TAB
TO-263
S
D
G
Top View
SUP85N03-07P
SUB85N03-07P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
"
20
V
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 25
_
C
I
D
85
a
A
Continuous Drain Current
(T
J
= 175 C)
T
C
= 100
_
C
I
D
64
A
Pulsed Drain Current
I
DM
240
A
Avalanche Current
I
AR
75
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
280
mJ
Maximum Power Dissipation
b
T
C
= 25
_
C (TO-220AB and TO-263)
P
D
107
c
W
Maximum Power Dissipation
b
T
A
= 25
_
C (TO-263)
d
P
D
3.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)
d
R
thJA
40
_
C/W
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
_
C/W
Junction-to-Case
R
thJC
1.4
Notes
a.
Package limited.
b.
Duty cycle
v
1%.
c.
See SOA curve for voltage derating.
d.
When mounted on 1" square PCB (FR-4 material).
SUP/SUB85N03-07P
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71147
S-00757--Rev. B, 10-Apr-00
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250
m
A
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
1
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
Z
G
V l
D i C
I
V
DS
= 30 V, V
GS
= 0 V
1
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175
_
C
250
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
120
A
D i S
O S
R
i
a
V
GS
= 10 V, I
D
= 30 A
0.006
0.007
W
Drain Source On State Resistance
a
r
DS(
)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
_
C
0.011
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
_
C
0.015
W
V
GS
= 4.5 V, I
D
=
20 A
0.01
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
S
Dynamic
b
Input Capacitance
C
iss
f
3720
F
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
715
pF
Reverse Transfer Capacitance
C
rss
370
Total Gate Charge
b
Q
g
V
15 V V
10 V I
85 A
60
120
C
Gate-Source Charge
b
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 85 A
13
nC
Gate-Drain Charge
b
Q
gd
10
Turn-On Delay Time
b
t
d(on)
V
15 V R
0 18
W
11
25
Rise Time
b
t
r
V
DD
= 15 V, R
L
= 0.18
W
I
85 A V
10 V R
2 5
W
70
140
ns
Turn-Off Delay Time
b
t
d(off)
DD
,
L
I
D
^
85 A, V
GEN
= 10 V, R
G
= 2.5
W
50
100
ns
Fall Time
b
t
f
105
200
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
c
Continuous Current
I
S
85
A
Pulsed Current
I
SM
200
A
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/
m
s
55
100
ns
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Independent of operating temperature.
c.
Guaranteed by design, not subject to production testing.
SUP/SUB85N03-07P
Vishay Siliconix
New Product
Document Number: 71147
S-00757--Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1000
2000
3000
4000
5000
0
6
12
18
24
30
0
2
4
6
8
10
0
12
24
36
48
60
0
20
40
60
80
100
120
0
20
40
60
80
100
0
0.005
0.010
0.015
0.020
0
20
40
60
80
100
0
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
50
100
150
200
250
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Drain Current (A)
I
D
Gate-to-Source V
oltage
(V)
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C Capacitance (pF)
V
GS
T
ransconductance
(S)
g
fs
25
_
C
55
_
C
3 V
T
C
= 125
_
C
V
DS
= 50 V
I
D
= 85 A
V
GS
= 10 thru 6 V
V
GS
= 10 V
C
iss
C
oss
T
C
= 55
_
C
25
_
C
125
_
C
4 V
V
GS
= 4.5 V
On-Resistance (
r
DS(on)
W
)
Drain Current (A)
I
D
I
D
Drain Current (A)
5 V
C
rss
2 V
SUP/SUB85N03-07P
Vishay Siliconix
New Product
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71147
S-00757--Rev. B, 10-Apr-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0
0.4
0.8
1.2
1.6
2.0
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature (
_
C)
V
SD
Source-to-Drain Voltage (V)
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 30 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
On-Resistance (
r
DS(on)
W
)
0
30
32
34
36
38
40
50
25
0
25
50
75
100
125
150
175
T
J
Junction Temperature (
_
C)
t
in
(Sec)
1000
10
0.00001
0.001
0.1
1
0.1
(a)
I
Dav
0.01
I
AV
(A) @ T
A
= 150
_
C
(V)
V
(BR)DSS
I
D
= 250
m
A
100
1
0.0001
I
AV
(A) @ T
A
= 25
_
C
SUP/SUB85N03-07P
Vishay Siliconix
New Product
Document Number: 71147
S-00757--Rev. B, 10-Apr-00
www.vishay.com
S
FaxBack 408-970-5600
2-5
THERMAL RATINGS
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
Limited
by r
DS(on)
0.1
100
T
C
= 25
_
C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
Ambient Temperature (
_
C)
Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
10
0.2
0.1
Duty Cycle = 0.5
Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
Single Pulse
0.05
0.02
1
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