FEATURES
D
TrenchFET
r
Power MOSFETS
D
175
_
C Junction Temperature
APPLICATIONS
D
Primary Side Switch
D
Automotive
- 42-V EPS and ABS
- DC/DC Conversion
- Motor Drives
SUP85N15-21
Vishay Siliconix
New Product
Document Number: 72003
S-21715--Rev. A, 07-Oct-02
www.vishay.com
1
N-Channel 150-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
150
0.021 @ V
GS
= 10 V
85
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
DRAIN connected to TAB
SUP85N15-21
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
150
Gate-Source Voltage
V
GS
"
20
V
_
T
C
= 25
_
C
85
Continuous Drain Current
(T
J
= 175
_
C)
T
C
= 125
_
C
I
D
50
Pulsed Drain Current
I
DM
180
A
Avalanche Current
I
AR
50
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
125
mJ
T
C
= 25
_
C
300
c
Maximum Power Dissipation
b
T
A
= 25
_
C
d
P
D
2.4
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient--Free Air
R
thJA
62.5
_
Junction-to-Case (Drain)
R
thJC
0.4
_
C/W
Notes
a.
Package limited.
b.
Duty cycle
v
1%.
c.
See SOA curve for voltage derating.
SUP85N15-21
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72003
S-21715--Rev. A, 07-Oct-02
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250
m
A
150
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
2
4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
V
DS
= 120 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 120 V, V
GS
= 0 V, T
J
= 125
_
C
50
m
A
DSS
V
DS
= 120 V, V
GS
= 0 V, T
J
= 175
_
C
250
m
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0175
0.021
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
_
C
0.042
W
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
_
C
0.055
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
S
Dynamic
b
Input Capacitance
C
iss
4750
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
530
pF
Reverse Transfer Capacitance
C
rss
220
Total Gate Charge
c
Q
g
76
110
Gate-Source Charge
c
Q
gs
V
DS
= 75 V,
V
GS
= 10 V, I
D
= 85 A
21
nC
Gate-Drain Charge
c
Q
gd
DS
GS
D
26
Turn-On Delay Time
c
t
d(on)
22
35
Rise Time
c
t
r
V
DD
= 75 V, R
L
= 0.9
W
170
250
Turn-Off Delay Time
c
t
d(off)
V
DD
= 75 V, R
L
= 0.9
W
I
D
^
85 A, V
GEN
= 10 V, R
G
= 2.5
W
40
60
ns
Fall Time
c
t
f
170
250
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
S
85
Pulsed Current
I
SM
180
A
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
130
200
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 50 A, di/dt = 100 A/
m
s
8
12
A
Reverse Recovery Charge
Q
rr
F
m
0.52
1.2
m
C
Notes
a.
Pulse test; pulse width
v
300
m
s, duty cycle
v
2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUP85N15-21
Vishay Siliconix
New Product
Document Number: 72003
S-21715--Rev. A, 07-Oct-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1000
2000
3000
4000
5000
6000
7000
0
25
50
75
100
125
150
0
4
8
12
16
20
0
25
50
75
100
125
150
0
30
60
90
120
150
180
0
20
40
60
80
100
120
0.00
0.01
0.02
0.03
0.04
0
20
40
60
80
100
120
0
30
60
90
120
150
180
0
1
2
3
4
5
6
7
0
30
60
90
120
150
180
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
- Gate-to-Source V
oltage
(V)
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
V
GS
- T
ransconductance
(S)
g
fs
25
_
C
-55
_
C
T
C
= 125
_
C
V
DS
= 75 V
I
D
= 85 A
V
GS
= 10 thru 7 V
V
GS
= 10 V
C
iss
C
oss
T
C
= -55
_
C
25
_
C
125
_
C
4 V
- On-Resistance (
r
DS(on)
W
)
- Drain Current (A)
I
D
I
D
- Drain Current (A)
6 V
C
rss
5 V
SUP85N15-21
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72003
S-21715--Rev. A, 07-Oct-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
-25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (
_
C)
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 30 A
T
J
= 25
_
C
T
J
= 150
_
C
(Normalized)
- On-Resistance (
r
DS(on)
W
)
0
140
150
160
170
180
190
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (
_
C)
t
in
(Sec)
1000
10
0.00001
0.001
0.1
1
0.1
(a)
I
Dav
0.01
I
AV
(A) @ T
A
= 150
_
C
(V)
V
(BR)DSS
I
D
= 1.0 mA
100
1
0.0001
I
AV
(A) @ T
A
= 25
_
C
SUP85N15-21
Vishay Siliconix
New Product
Document Number: 72003
S-21715--Rev. A, 07-Oct-02
www.vishay.com
5
THERMAL RATINGS
0
15
30
45
60
75
90
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
1000
10
0.1
1
10
1000
Limited
by r
DS(on)
0.1
100
T
C
= 25
_
C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
- Ambient Temperature (
_
C)
- Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
- Drain Current (A)
I
D
1 ms
10 ms
100 ms
dc
10
m
s
100
m
s
Single Pulse
0.05
0.02
1
100
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