FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
APPLICATIONS
D Automotive Such As
- High-Side Switch
- Motor Drives
- 12-V Battery
D Synchronous Rectification
SUP90N06-05L
Vishay Siliconix
New Product
Document Number: 73037
S-41504--Rev. A, 09-Aug-04
www.vishay.com
1
N-Channel 60-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
(
W
)
I
D
(A)
60
0.0049 @ V
GS
= 10 V
90
a
60
0.0055 @ V
GS
= 4.5 V
90
a
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
DRAIN connected to TAB
Ordering Information: SUP90N06-05L--E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
(T
J
= 175_C)
T
C
= 25_C
I
D
90
a
Continuous Drain Current
(T
J
= 175_C)
T
C
= 125_C
I
D
90
a
A
Pulsed Drain Current
I
DM
240
A
Avalanche Current, Single Pulse
I
AS
75
Repetitive Avalanche Energy, Single Pulse
L = 0.1 mH
E
AS
280
mJ
Maximum Power Dissipation
T
C
= 25_C
P
D
300
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (Free Air)
R
thJA
62.5
_C/W
Junction-to-Case
R
thJC
0.5
_C/W
Notes
a.
Package limited.
b.
See SOA curve for voltage derating.
SUP90N06-05L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73037
S-41504--Rev. A, 09-Aug-04
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 mA
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
50
mA
g
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
250
m
On-State Drain Current
a
I
D(on)
V
DS
w 5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0039
0.0049
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
20 A
0.0044
0.0055
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
0.0083
W
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
0.0103
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
12900
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1060
pF
Reverse Transfer Capacitance
C
rss
700
Gate Resistance
R
g
f = 1.0 MHz
1.3
W
Total Gate Charge
c
Q
g
200
300
Gate-Source Charge
c
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 90 A
50
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
33
Turn-On Delay Time
c
t
d(on)
22
35
Rise Time
c
t
r
V
DD
= 30 V, R
L
= 0.33 W
130
200
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 30 V, R
L
= 0.33 W
I
D
^ 90 A, V
GEN
= 10 V, R
g
= 2.5 W
110
165
ns
Fall Time
c
t
f
280
420
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
S
90
A
Pulsed Current
I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 90 A, V
GS
= 0 V
1.1
1.5
V
Reverse Recovery Time
t
rr
I
90 A di/dt 100 A/
55
82
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= 90 A, di/dt = 100 A/ms
3.6
5.4
A
Reverse Recovery Charge
Q
rr
0.1
0.22
mC
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUP90N06-05L
Vishay Siliconix
New Product
Document Number: 73037
S-41504--Rev. A, 09-Aug-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3000
6000
9000
12000
15000
18000
0
5
10
15
20
25
30
35
40
0
4
8
12
16
20
0
50
100
150
200
250
300
350
400
0
80
160
240
320
400
480
0
20
40
60
80
100
0.000
0.002
0.004
0.006
0.008
0
20
40
60
80
100
120
0
50
100
150
200
250
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
50
100
150
200
250
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
-
T
ransconductance
(S)
g
fs
25_C
-55_C
3 V
T
C
= 125_C
V
GS
= 30 V
I
D
= 90 A
V
GS
= 10 thru 5 V
V
GS
= 10 V
C
iss
C
oss
T
C
= -55_C
25_C
125_C
4 V
V
GS
= 4.5 V
-
On-Resistance (
r
DS(on)
W
)
-
Drain Current (A)
I
D
C
rss
I
D
- Drain Current (A)
SUP90N06-05L
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73037
S-41504--Rev. A, 09-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
= 30 A
T
J
= 25_C
T
J
= 150_C
0
60
62
64
66
68
70
72
74
-50 -25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (_C)
t
in
(Sec)
1000
10
0.00001
0.0001
0.1
1
0.1
(a)
I
Dav
0.001
I
AV
(A) @ T
A
= 150_C
(V)
V
(BR)DSS
I
D
= 10 mA
100
1
I
AV
(A) @ T
A
= 25_C
r
DS
(
on)
-
On-Resiistance
(Normalized)
0.01
SUP90N06-05L
Vishay Siliconix
New Product
Document Number: 73037
S-41504--Rev. A, 09-Aug-04
www.vishay.com
5
THERMAL RATINGS
0
40
80
120
160
200
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
Limited
by r
DS(on)
0.1
100
T
C
= 25_C
Single Pulse
Maximum Drain Current vs. Case Temperature
T
C
- Case Temperature (_C)
-
Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
Normalized Ef
fective
T
ransient
Thermal Impedance
1
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
-
Drain Current (A)
I
D
1 ms
10 ms, 100 ms,
dc
10 ms
100 ms
1
Limited
by Package
0.02
PDF 
ZIP