FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D DC/DC Primary Switch
D Automotive
- 12-V Boardnet
- High-Side Switches
- Motor Drives
SUP90P06-09L
Vishay Siliconix
New Product
Document Number: 73010
S-41203--Rev. A, 21-Jun-04
www.vishay.com
1
P-Channel 60-V (D-S) 175
_
C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
W
)
I
D
(A)
c
-60
0.0093 @ V
GS
= -10 V
-90
-60
0.0118 @ V
GS
= -4.5 V
-90
TO-220AB
Top View
G D S
Ordering Information: SUP90P06-09L--E3
DRAIN connected to TAB
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-60
Gate-Source Voltage
V
GS
"20
V
Continuous Drain Current
c
T
C
= 25_C
I
D
-90
Continuous Drain Current
c
(T
J
= 175_C)
T
C
= 125_C
I
D
-67
A
Pulsed Drain Current
I
DM
-200
A
Avalanche Current
L = 0 1 mH
I
AS
-65
Single Pulse Avalanche Energy
a
L = 0.1 mH
E
AS
211
mJ
Power Dissipation
T
C
= 25_C
P
D
250
b
W
Power Dissipation
T
A
= 25_C
P
D
2.4
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient Free Air
R
thJA
62
_C/W
Junction-to-Case
R
thJC
0.6
_C/W
Notes:
a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
Limited by package.
SUP90P06-09L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73010
S-41203--Rev. A, 21-Jun-04
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250 mA
-60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 mA
-1
-3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100
nA
V
DS
= -60 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -60 V, V
GS
= 0 V, T
J
= 125_C
-50
mA
g
DSS
V
DS
= -60 V, V
GS
= 0 V, T
J
= 175_C
-250
m
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-120
A
V
GS
= -10 V, I
D
= -30 A
0.0074
0.0093
Drain Source On State Resistance
a
r
DS( )
V
GS
= -10 V, I
D
= -30 A, T
J
= 125_C
0.0150
W
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -30 A, T
J
= 175_C
0.0190
W
V
GS
= -4.5 V, I
D
= -20 A
0.0094
0.0118
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -30 A
20
S
Dynamic
b
Input Capacitance
C
iss
9200
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
975
pF
Reversen Transfer Capacitance
C
rss
760
Total Gate Charge
c
Q
g
160
240
Gate-Source Charge
c
Q
gs
V
DS
= -30 V,
V
GS
= -10 V, I
D
= -90 A
40
nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
36
Gate Resistance
R
g
f = 1.0 MHz
3
W
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
V
DD
= -30 V, R
L
= 0.33 W
190
285
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
30 V, R
L
0.33 W
I
D
] -90 A, V
GEN
= -10 V, R
g
= 2.5 W
140
210
ns
Fall Time
c
t
f
g
300
450
Source-Drain Diode Ratings and Characteristics (T
C
= 25
_
C)
b
Continuous Current
I
s
-90
A
Pulsed Current
I
SM
-200
A
Forward Voltage
a
V
SD
I
F
= -50 A, V
GS
= 0 V
-1.0
-1.5
V
Reverse Recovery Time
t
rr
60
90
ns
Peak Reverse Recovery Current
I
RM(REC)
I
F
= -50 A, di/dt = 100 A/ms
-3
-4.5
A
Reverse Recovery Charge
Q
rr
F
,
m
0.09
0.2
mC
Notes:
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
SUP90P06-09L
Vishay Siliconix
New Product
Document Number: 73010
S-41203--Rev. A, 21-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
40
80
120
160
200
0
10
20
30
40
50
60
70
80
0
4
8
12
16
20
0
40
80
120
160
200
240
280
320
0.000
0.004
0.008
0.012
0.016
0.020
0
20
40
60
80
100
120
0
3000
6000
9000
12000
15000
0
10
20
30
40
50
60
0
40
80
120
160
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
40
80
120
160
200
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
-
Gate-to-Source V
oltage (V)
-
On-Resistance (
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
r
DS(on)
W
)
V
GS
I
D
- Drain Current (A)
-
T
ransconductance
(S)
g
fs
25_C
-55_C
T
C
= 125_C
V
DS
= 30 V
I
D
= 90 A
V
GS
= 10 thru 6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
iss
C
oss
C
rss
125_C
3 V
4 V
T
C
= -55_C
25_C
5 V
2 V
SUP90P06-09L
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73010
S-41203--Rev. A, 21-Jun-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.3
0.6
0.9
1.2
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25
0
25
50
75
100 125 150 175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
100
10
1
V
GS
= 10 V
I
D
= 30 A
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
56
60
64
68
72
76
-50 -25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (_C)
t
in
(Sec)
1000
10
0.0001
0.001
0.1
1
100
(a)
I
Dav
0.01
(V)
V
(BR)DSS
I
AV
(A) @ T
A
= 25_C
I
AV
(A) @ T
A
= 150_C
1
0.1
I
D
= 10 mA
T
J
= 25_C
T
J
= 150_C
r
DS
(
on)
-
On-Resiistance
(Normalized)
SUP90P06-09L
Vishay Siliconix
New Product
Document Number: 73010
S-41203--Rev. A, 21-Jun-04
www.vishay.com
5
THERMAL RATINGS
0
50
100
150
200
0
25
50
75
100
125
150
175
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
Normalized Ef
fective
T
ransient
Thermal Impedance
1
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
- Case Temperature (_C)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
1000
1
0.1
1
10
100
Limited by r
DS(on)
0.1
10
-
Drain Current (A)
I
D
1 ms
10 ms
100 ms
T
C
= 25_C
Single Pulse
100 ms, dc
10 ms
-
Drain Current (A)
I
D
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Limited
by Package
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