TCET110.(G) up to TCET4100
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Document Number 83503
Rev. A6, 08Sep99
1 (11)
Optocoupler with Phototransistor Output
Description
The TCET110./ TCET2100/ TCET4100 consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead up to 16-lead plastic
dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance be-
tween input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced
isolation):
D
For appl. class I IV at mains voltage
300 V
D
For appl. class I III at mains voltage
600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, com-
puter peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
13929
C
TCET110.(G) up to TCET4100
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Document Number 83503
Rev. A6, 08Sep99
Order Instruction
Ordering Code
CTR Ranking
Remarks
TCET1100/ TCET1100G
1)
50 to 600%
4 Pin = Single channel
TCET1101/ TCET1101G
1)
40 to 80%
4 Pin = Single channel
TCET1102/ TCET1102G
1)
63 to 125%
4 Pin = Single channel
TCET1103/ TCET1103G
1)
100 to 200%
4 Pin = Single channel
TCET1104/ TCET1104G
1)
160 to 320%
4 Pin = Single channel
TCET1105/ TCET1105G
1)
50 to 150%
4 Pin = Single channel
TCET1106/ TCET1106G
1)
100 to 300%
4 Pin = Single channel
TCET1107/ TCET1107G
1)
80 to 160%
4 Pin = Single channel
TCET1108/ TCET1108G
1)
130 to 260%
4 Pin = Single channel
TCET1109/ TCET1109G
1)
200 to 400%
4 Pin = Single channel
TCET2100
50 to 600%
8 Pin = Dual channel
TCET4100
50 to 600%
16 Pin = Quad channel
1)
G = Leadform 10.16 mm; G is not marked on the body
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 11027
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 Double Protection
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
VDE 0884, Certificate number 115667
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according
to VDE 0303/IEC 112
Comparative Tracking Index: CTI
175
D
Thickness through insulation
0.75 mm
D
Internal creepage distance > 4 mm
General features:
D
CTR offered in 9 groups
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2100/ TCET4100 optional;
suffix letter `G' is not marked on the optocoupler
D
Coupling System U
TCET110.(G) up to TCET4100
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Document Number 83503
Rev. A6, 08Sep99
3 (11)
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
1.5
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
V
IO
5
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operating ambient temperature
range
T
amb
40 to +100
C
Storage temperature range
T
stg
55 to +125
C
Soldering temperature
2 mm from case t
10 s
T
sd
260
C
TCET110.(G) up to TCET4100
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Document Number 83503
Rev. A6, 08Sep99
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
=
50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
70
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector emitter cut-off
current
V
CE
= 20 V, I
f
= 0, E = 0
I
CEO
10
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter
saturation voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
W
f
c
110
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCET1100(G)/
TCET2100/
TCET4100
CTR
0.50
6.0
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
TCET1101(G)
CTR
0.40
0.8
C F
CE
F
TCET1102(G)
CTR
0.63
1.25
TCET1103(G)
CTR
1.0
2.0
TCET1104(G)
CTR
1.6
3.2
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
TCET1101(G)
CTR
0.13
0.30
C F
CE
F
TCET1102(G)
CTR
0.22
0.45
TCET1103(G)
CTR
0.34
0.70
TCET1104(G)
CTR
0.56
0.90
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCET1105(G)
CTR
0.5
1.5
C F
CE
F
TCET1106(G)
CTR
1.0
3.0
TCET1107(G)
CTR
0.8
1.6
TCET1108(G)
CTR
1.3
2.6
TCET1109(G)
CTR
2.0
4.0
TCET110.(G) up to TCET4100
Vishay Telefunken
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FaxBack +1-408-970-5600
Document Number 83503
Rev. A6, 08Sep99
5 (11)
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I
si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T
amb
25
C
P
si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V
IOTM
8
kV
Safety temperature
T
si
150
C
Insulation Rated Parameters
(according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage
Routine test
100%, t
test
= 1 s
V
pd
1.6
kV
Partial discharge test voltage
t
Tr
= 60 s, t
test
= 10 s,
V
IOTM
8
kV
g
g
Lot test (sample test)
Tr
test
(see figure 2)
V
pd
1.3
kV
Insulation resistance
V
IO
= 500 V
R
IO
10
12
W
V
IO
= 500 V,
T
amb
= 100
C
R
IO
10
11
W
V
IO
= 500 V,
T
amb
= 150
C
(construction test only)
R
IO
10
9
W
0
25
50
75
125
0
50
100
150
200
300
P
T
otal
Power
Dissipation
(
mW
)
tot
T
si
Safety Temperature (
C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
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