TCMD10.. Series
Vishay
Semiconductors
1 (12)
www.vishay.com
Document Number 83513
Rev. A2, 15Dec00
Optocoupler with Photodarlington Output
Description
The TCMD10.. Series consist of a photodarlington
optically coupled to a gallium arsenide infrared-
emitting diodes in an 4- lead up to 16- lead plastic
Miniflat package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Programmable logic controllers, modems, answering
machines, general applications
Features
D
Low profile package (half pitch)
D
AC Isolation test voltage V
io
= 3.75 kV
RMS
D
Low coupling capacitance of typical 0.3 pF
D
Low temperature coefficient of CTR
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
Coupling System M
16467
Coll. Emitter
Anode Cath.
4 PIN
16 PIN
15238
1
2
8
9
C
Order Instruction
Ordering Code
CTR Ranking
Remarks
TCMD1000
>600%
4 Pin = Single channel
TCMD4000
>600%
16 Pin = Quad channel
TCMD10.. Series
Vishay
Semiconductors
www.vishay.com
2 (12)
Rev. A2, 15Dec00
Document Number 83513
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10
m
s
I
FSM
1.5
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
125
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
35
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
80
mA
Peak collector current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
T
amb
25
C
P
V
150
mW
Junction temperature
T
j
125
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
V
IO
1)
3.75
kV
Total power dissipation
T
amb
25
C
P
tot
250
mW
Operating ambient temperature
range
T
amb
40 to +100
C
Storage temperature range
T
stg
40 to +100
C
Soldering temperature
T
sd
235
C
1)
Related to standard climate 23/50 DIN 50014
TCMD10.. Series
Vishay
Semiconductors
3 (12)
www.vishay.com
Document Number 83513
Rev. A2, 15Dec00
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 100
m
A
V
CEO
35
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
7
V
Collector dark current
V
CE
= 10 V, I
F
= 0, E = 0
I
CEO
100
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100
W
f
c
10
kHz
Coupling capacitance
f = 1 MHz
C
k
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I
C
/I
F
V
CE
= 2 V, I
F
= 1 mA
TCMD1000
CTR
6.0
8.0
C F
V
CE
= 2 V, I
F
= 1 mA
TCMD4000
CTR
6.0
8.0
TCMD10.. Series
Vishay
Semiconductors
www.vishay.com
4 (12)
Rev. A2, 15Dec00
Document Number 83513
Switching Characteristics
Parameter
Test Conditions
Symbol
Typ.
Unit
Rise time
V
CE
= 2 V, I
C
=10 mA, R
L
= 100
W
(see figure 1)
t
r
300
m
s
Turn-off time
CE
C
L
(
g
)
t
off
250
m
s
R
L
50
Channel II
Channel I
I
C
= 10 mA;
+V
CC
I
F
I
F
0
R
G
= 50
t
p
t
p
= 50
m
s
T
= 0.01
Oscilloscope
R
I
= 1 M
C
I
= 20 pF
14779
Figure 1. Test circuit, non-saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
Figure 2. Switching times
TCMD10.. Series
Vishay
Semiconductors
5 (12)
www.vishay.com
Document Number 83513
Rev. A2, 15Dec00
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0.8
0.9
1.0
1.1
1.2
1.3
0
20
40
60
80
100
T
amb
Ambient Temperature (
C )
14389
V
Forward
V
oltage (
V
)
F
I
F
=10mA
Figure 3. Forward Voltage vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
14390
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
302010 0 10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature (
C )
14391
CTR Relative Current
T
ransfer
Ratio
rel
V
CE
=5V
I
F
=1mA
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
100000
20
30
40
50
60
70
80
90
100
T
amb
Ambient Temperature (
C )
14392
I Collector Dark Current,
CEO
with open Base ( nA
)
V
CE
=10V
I
F
=0
Figure 6. Collector Dark Current vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0.1
1.0
10.0
100.0
I
F
Forward Current ( mA )
14393
V
CE
=2V
I Collector Current ( mA
)
C
Figure 7. Collector Current vs. Forward Current
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
V
CE
Collector Emitter Voltage ( V )
14394
I Collector Current ( mA
)
C
1mA
0.5mA
0.2mA
0.1mA
I
F
=2mA
Figure 8. Collector Current vs. Collector Emitter Voltage
PDF 
ZIP