TCMT1600 / TCMT4600
Document Number 83512
Rev. 1.5, 02-Feb-05
Vishay Semiconductors
www.vishay.com
1
Pb
Pb-free
e3
C
E
A
C
4 PIN
16 PIN
1
2
8
9
C
17224
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, AC Input, Single/Quad
Channel, Half Pitch Mini-Flat Package
Features
Low profile package (half pitch)
AC Isolation test voltage 3750 V
RMS
Low coupling capacitance of typical 0.3 pF
Low temperature coefficient of CTR
Wide ambient temperature range
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E76222 System Code M, Double
Protection
C-UL CSA 22.2 bulletin 5A, System Code U
Applications
Programmable logic controllers
Description
The low profile Miniflat package includes an Optocou-
pler with AC Input and Transistor Output. It is avail-
able in single channel (4 pin) TCMT1600 or quad
channel (16 pin)TCMT4600.
Order Information
NOTE: Available only on tape and reel.
* Product is rotated 180 in tape and reel cavity.
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
TCMT1600
CTR 80 - 300 %, Single Channel, SMD-4
TCMT4600
CTR 80 - 300 %, Quad Channel, SMD-16
TCMT4600T0*
CTR 80 - 300 %, Quad Channel, SMD-16
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
10 s
I
FSM
1.5
A
Power dissipation
P
diss
100
mW
Junction temperature
T
j
125
C
www.vishay.com
2
Document Number 83512
Rev. 1.5, 02-Feb-05
TCMT1600 / TCMT4600
Vishay Semiconductors
Output
Coupler
1)
Related to standard climate 23/50 DIN 50014
Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Collector peak current
t
p
/T = 0.5, t
p
10 ms
I
CM
100
mA
Power dissipation
P
diss
150
mW
Junction temperature
T
j
125
C
Parameter
Test condition
Symbol
Value
Unit
AC isolation test voltage (RMS)
V
ISO
1)
3750
V
RMS
Total power dissipation
P
tot
250
mW
Operating ambient temperature
range
T
amb
- 40 to + 100
C
Storage temperature range
T
stg
- 40 to + 100
C
Soldering temperature
T
sld
240
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Junction capacitance
V
R
= 0 V, f = 1 MHz
C
j
50
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector emitter voltage
I
C
= 100
A
V
CEO
70
V
Emitter collector voltage
I
E
= 100
A
V
ECO
7
V
Collector dark current
V
CE
= 20 V, I
F
= 0, E = 0
I
CEO
100
nA
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100
f
c
100
kHz
Capacitance (input-output)
f = 1 MHz
C
IO
0.3
pF
TCMT1600 / TCMT4600
Document Number 83512
Rev. 1.5, 02-Feb-05
Vishay Semiconductors
www.vishay.com
3
Current Transfer Ratio
Switching Characteristics
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCMT1600
CTR
80
300
%
TCMT4600
CTR
80
300
%
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
d
3.0
s
Rise time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
r
3.0
s
Fall time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
f
4.7
s
Storage time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
s
0.3
s
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
on
6.0
s
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
(see figure 1)
t
off
5.0
s
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
(see figure 1)
t
on
9.0
s
Turn-off time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k
(see figure 1)
t
off
18.0
s
Figure 1. Test circuit, non-saturated operation
Figure 2. Test circuit, saturated operation
100
50
Channel II
Channel I
I
C
= 2 mA;
adjusted throug
input amplitude
+5 V
I
F
I
F
0
R
G
= 50
t
p
t
p
= 50
ms
T
= 0.01
Oscilloscope
R
L
= 1 M
C
L
= 20 pF
15234
1 k
50
Channel II
Channel I
+5 V
I
F
0
R
G
= 50
t
p
t
p
= 50
ms
T
= 0.01
Oscilloscope
R
L
= 1 M
C
L
= 20 pF
15235
I
F
= 10 mA
Figure 3. Switching Times
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= t
d
+ t
r
)
turn-on time
t
s
storage time
t
f
fall time
t
off
(= t
s
+ t
f
)
turn-off time
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Document Number 83512
Rev. 1.5, 02-Feb-05
TCMT1600 / TCMT4600
Vishay Semiconductors
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 4. Total Power Dissipation vs. Ambient Temperature
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
0
50
100
150
200
250
300
0
40
80
120
P
T
otal
Power
Dissipation
(
m
W
)
T
amb
Ambient Temperature( C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
- Forward Voltage ( V )
96 11862
F
I
-
Forward
Current
(
m
A
)
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR
Relative
Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature ( C )
95 11025
75
V
CE
=5V
I
F
=5mA
Figure 7. Collector Dark Current vs. Ambient Temperature
Figure 8. Collector Current vs. Forward Current
Figure 9. Collector Current vs. Collector Emitter Voltage
0
25
50
75
1
10
100
1000
10000
I
-
Collector
Dark
Current,
CEO
T
amb
- Ambient Temperature (
C )
100
95 11026
with
open
Base
(
n
A
)
V
CE
= 20 V
I
F
= 0
0.1
1
10
0.01
0.1
1
100
I
Collector
Current
(
m
A
)
C
I
F
Forward Current ( mA )
100
95 11027
10
V
CE
=5V
0.1
1
10
0.1
1
10
100
V
CE
Collector Emitter Voltage ( V )
100
95 10985
I
Collector
Current
(
m
A)
C
I
F
=50mA
5mA
2mA
1mA
20mA
10mA
TCMT1600 / TCMT4600
Document Number 83512
Rev. 1.5, 02-Feb-05
Vishay Semiconductors
www.vishay.com
5
Figure 10. Collector Emitter Saturation Voltage vs. Collector
Current
Figure 11. Current Transfer Ratio vs. Forward Current
Figure 12. Turn on / off Time vs. Forward Current
1
10
0
0.2
0.4
0.6
0.8
1.0
V
Collector
Emitter
Saturation
V
o
ltage
(
V
)
CEsat
I
C
Collector Current ( mA )
100
CTR=50%
20%
10%
95 11028
0.1
1
10
1
10
100
1000
CTR
Current
T
ransfer
Ratio
(
%
)
I
F
Forward Current ( mA )
100
95 11029
V
CE
=5V
0
5
10
15
0
10
20
30
40
50
I
F
Forward Current ( mA )
20
95 11031
t
/
t
T
u
rn
on
/
T
urn
of
f
T
ime
(
s
)
off
on
Saturated Operation
V
S
=5V
R
L
=1k
t
off
t
on
Figure 13. Turn on / off Time vs. Collector Current
0
2
4
6
0
2
4
6
8
10
I
C
Collector Current ( mA )
10
95 11030
t
/
t
T
u
rn
on
/
T
urn
of
f
T
ime
(
s
)
off
on
Non Saturated
Operation
V
S
=5V
R
L
=100
t
off
t
on
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