TCRT1000/ TCRT1010
Vishay Telefunken
1 (7)
www.vishay.com
Document Number 83752
Rev. A3, 27May99
Reflective Optical Sensor with Transistor Output
Description
The TCRT1000/ TCRT1010 have a compact
construction where the emitting-light source and the
detector are arranged in the same direction to sense
the presence of an object by using the reflective
IR-beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
Applications
D
Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic encoder assemblies for
transmissive sensing).
Features
D
Compact construction in spacing of 0.1
D
No setting efforts
D
High signal outputs
D
Low temperature coefficient
D
Detector provided with optical filter
D
Current Transfer Ratio (CTR) of typical 2.5%
14867
A)
B)
A
C
E
C
96 11971
Top view
Order Instruction
Ordering Code
Sensing Distance
Remarks
TCRT1000
A)
1 mm
TCRT1010
B)
1 mm
TCRT1000/ TCRT1010
Vishay Telefunken
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2 (7)
Rev. A3, 27May99
Document Number 83752
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
Forward current
I
F
50
mA
Forward surge current
t
p
10
m
s
I
FSM
3
A
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
100
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
32
V
Emitter collector voltage
V
ECO
5
V
Collector current
I
C
50
mA
Power dissipation
T
amb
25
C
P
V
100
mW
Junction temperature
T
j
100
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Total power dissipation
T
amb
25
C
P
tot
200
mW
Ambient temperature range
T
amb
55 to +85
C
Storage temperature range
T
stg
55 to +100
C
Soldering temperature
2 mm from case, t
5 s
T
sd
260
C
TCRT1000/ TCRT1010
Vishay Telefunken
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Document Number 83752
Rev. A3, 27May99
Electrical Characteristics
(T
amb
= 25
C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage
I
C
= 1 mA
V
CEO
32
V
Emitter collector voltage
I
E
= 100
m
A
V
ECO
5
V
Collector dark current
V
CE
= 20 V, I
F
= 0, E = 0
I
CEO
200
nA
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector current
V
CE
= 5 V, I
F
= 20 mA,
d = 1 mm (figure 1)
I
C
1)
0.3
0.5
mA
Cross talk current
V
CE
= 5 V, I
F
= 20 mA
(figure 1)
I
CX
2)
1
m
A
Collector emitter satu-
ration voltage
I
F
= 20 mA, I
C
= 0.1 mA,
d = 1 mm (figure 1)
V
CEsat
1)
0.3
V
1)
Measured with the `Kodak neutral test card', white side with 90% diffuse reflectance
2)
Measured without reflecting medium
~~
~
~ ~
~
A
C
E
C
Detector
Emitter
d
Reflecting medium
(Kodak neutral test card)
95 10893
Figure 1. Test circuit
TCRT1000/ TCRT1010
Vishay Telefunken
www.vishay.com
4 (7)
Rev. A3, 27May99
Document Number 83752
Typical Characteristics
(T
amb
= 25
_
C, unless otherwise specified)
0
100
200
300
0
25
50
75
100
95 11071
P
T
otal Power Dissipation ( mW
)
tot
T
amb
Ambient Temperature (
C )
Coupled device
Phototransistor
IR-diode
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )
96 11862
F
I Forward Current ( mA
)
Figure 3. Forward Current vs. Forward Voltage
25
0
25
50
0
0.5
1.0
1.5
2.0
CTR Relative Current
T
ransfer
Ratio
rel
T
amb
Ambient Temperature (
C )
100
95 11074
75
V
CE
=5V
I
F
=20mA
d=1mm
Figure 4. Relative Current Transfer Ratio vs.
Ambient Temperature
0.1
1
10
0.01
0.1
1.0
10.0
V
CE
Collector Emitter Voltage ( V )
100
95 11075
I Collector Current ( mA
)
C
Kodak Neutral Card
(White Side)
d = 1.0 mm
I
F
= 50 mA
20 mA
10 mA
5 mA
2 mA
Figure 5. Collector Current vs. Collector Emitter Voltage
0.1
1
10
0.1
1
10
100
CTR Current
T
ransfer Ratio ( % )
I
F
Forward Current ( mA )
100
95 11076
d=1mm
V
CE
=5V
Figure 6. Current Transfer Ratio vs. Forward Current
0
2
4
6
8
0.1
1
10
I Collector Current ( mA
)
C
d Distance ( mm )
10
95 11077
V
CE
=5V
I
F
=20mA
0.01
Figure 7. Collector Current vs. Distance
TCRT1000/ TCRT1010
Vishay Telefunken
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Document Number 83752
Rev. A3, 27May99
1
2
3
4
5
0
20
40
60
80
120
I
Relative Collector Current
Crel
s Displacement ( mm )
6
95 11078
100
Sensing Object
d
s
d=1mm
V
CE
=5V
I
F
=20mA
Figure 8. Relative Collector Current vs. Displacement
Dimensions of TCRT1000 in mm
14768
TCRT1000/ TCRT1010
Vishay Telefunken
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Rev. A3, 27May99
Document Number 83752
Dimensions of TCRT1010 in mm
14769
TCRT1000/ TCRT1010
Vishay Telefunken
7 (7)
www.vishay.com
Document Number 83752
Rev. A3, 27May99
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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