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Электронный компонент: TFDT4500

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TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pending--Rev. A, 03-Apr-98
1
Pre-Release Information
2.75.5V Serial Infrared Transceiver Module Family
(SIR, 115.2 kbit/s)
Features
Applications
D
Compliant to IrDA 1.2 (up to
115.2 kbit/s)
D
Wide Operating Voltage Range
(2.7 to 5.5 V )
D
Low Power Consumption
(1.3 mA Supply Current)
D
Power Sleep Mode Through
V
CC1
/SD Pin (5 nA Sleep
Current)
D
Long Range (up to 3.0 m at 115.2
kbit/s)
D
Three Surface Mount Package
Options
Universal (9.7 x 4.7 x 4.0 mm)
Side View (13.0
x
5.95
x
5.3
mm)
Top View (13.0
x
7.6
x
5.95
mm)
D
BabyFace (Universal) Package
Capable of Surface Mount
Solderability to Side- and
Top-View Orientation
D
Directly Interfaces with Various
Super I/O and Controller Devices
and TEMIC's TOIM3000 and
TOIM3232 I/Os
D
Few External Components
Required
D
Backward Compatible to All
TEMIC SIR Infrared
Transceivers
D
Builtin EMI Protection No
External Shielding Necessary
D
Notebook Computers, Desktop
PCs, Palmtop Computers (Win
CE, Palm PC), PDAs
D
Digital Still and Video Cameras
D
Printers, Fax Machines,
Photocopiers, Screen Projectors
D
Telecommunication Products
(Cellular Phones, Pagers)
D
Internet TV Boxes, Video
conferencing systems
D
External Infrared Adapters
(Dongles)
D
Medical and Industrial Data
Collection Devices
Description
The TFDU4100, TFDS4500, and TFDT4500 are a family
of low-power infrared transceiver modules compliant to
the IrDA 1.2 standard for serial infrared (SIR) data
communication, supporting IrDA speeds up to 115.2
kbit/s. Integrated within the transceiver modules are a
photo PIN diode, infrared emitter (IRED), and a
low-power analog control IC to provide a total frontend
solution in a single package. TEMIC's SIR transceivers
are available in three package options, including our
BabyFace package (TFDU4100), the smallest SIR
transceiver available on the market. This wide selection
provides flexibility for a variety of applications and space
constraints.
The transceivers are capable of directly interfacing with
a wide variety of I/O chips which perform the pulse-width
modulation/demodulation function, including TEMIC's
TOIM3000 and TOIM3232. At a minimum, a
current-limiting resistor in series with the infrared emitter
and a Vcc bypass capacitor are the only external
components required to implement a complete solution.
Package Options
TFDU4100
Baby Face (Universal)
TFDS4500
Side View
TFDT4500
Top View
This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pre-Release Information
2
Pending--Rev. A, 03-Apr-98
Functional Block Diagram
Amplifier
Comparator
AGC
Logic
SC
Txd
V
CC1
/SD
Driver
GND
Open Collector Driver
Rxd
IRED Anode
IRED Cathode
V
CC2
R
S
Pin Assignment and Description
Pin Number
" U ", " T "
Option
" S "
Option
Function
Description
I/O
Active
1
8
IRED Anode
IRED anode, should be externally connected to V
CC2
through a current
control resistor
2
1
IRED Cathode
IRED cathode, internally connected to driver transistor
3
7
Txd
Transmit Data Input
I
HIGH
4
2
Rxd
Received Data Output, pushpull CMOS driver output capable of driving a
standard CMOS or TTL load. No external pullup or pulldown resistor is
required (20 k
resistor internal to device). Pin is inactive during
transmission.
O
LOW
5
6
NC
Do not connect
6
3
V
CC1
/ SD
Supply Voltage/Shutdown (see "Shutdown" on page 6)
7
5
SC
Sensitivity control
I
HIGH
8
4
GND
Ground
1
2
3
4
5
6
7
8
IRED
Detector
1
2
3
4
5
6
7
8
1 2 3 4 5 6 7 8
IRED
Detector
IRED
Detector
"U" Option
BabyFace (Universal)
"S" Option
Side View
"T" Option
Top View
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pending--Rev. A, 03-Apr-98
3
Pre-Release Information
Ordering Information
Part Number
Qty/ Reel
Description
TFDU4100TR3
1000 pcs
Oriented in carrier tape for side view surface mounting
TFDU4100TT3
1000 pcs
Oriented in carrier tape for top view surface mounting
TFDS4500TR3
750 pcs
TFDT4500TR3
750 pcs
Absolute Maximum Ratings
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Supply Voltage Range
V
CC1
0.5
6
V
Voltage Range of IRED Drive Output
V
CC2
IRED anode pin, T
xd
LOW
0.5
6
V
Input Currents
d
10
mA
Output Sink Current
25
mA
Power Dissipation
e
P
D
200
mW
Junction Temperature
T
J
125
Ambient Temperature Range (Operating)
T
amb
25
85
C
Storage Temperature Range
T
stg
25
85
C
Soldering Temperature
t = 20 s
215
240
Average IRED Current
I
IRED
(DC)
100
mA
Repetitive Pulsed IRED Current
I
IRED
(RP)
t < 90
s, t
on
<20%
500
mA
IRED Anode Voltage at Current Output
V
IREDA
0.5
6
Transmitter Data Input Voltage
V
Txd
0.5
V
cc
+ 0.5
V
Receiver Data Output Voltage
V
Rxd
0.5
V
cc
+ 0.5
Virtual Source Size
f
d
2.5
2.8
mm
Maximum Intensity for Class 1 Operation of
IEC 825 or EN60825
g
EN60825, 1997
400
mW/sr
Notes
a.
Reference point GND pin unless otherwise noted.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
All pins except IRED cathode pin and IRED anode pin.
e.
See Derating Curve
f.
Method: (1-1/e) encircled energy.
g.
Worst case IrDA SIR pulse pattern.
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pre-Release Information
4
Pending--Rev. A, 03-Apr-98
Electrical Characteristics
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Transceiver
Supply Voltage
V
CC1
Receive Mode
2.7
5.5
V
Supply Voltage
V
CC1
Transmit Mode, R
2
= 51
2.0
5.5
V
Supply Current, V
CC1
Pin
I
S
V
CC1
= 5.5V
1.3
2.5
pp y
,
CC1
(Receive Mode)
I
S
V
CC1
= 2.7V
1.0
1.5
mA
Supply Current, V
CC1
Pin (avg)
d
I
S
V
CC1
= 5.5V
5.0
5.5
mA
pp y
,
CC1
(
g)
(Transmit Mode)
d
I
S
V
CC1
= 2.7V
3.5
4.5
Leakage Current of IR Emitter, IRED
Anode Pin
I
S
V
CC1
= OFF, T
xd
= LOW, V
CC2
= 6V,
T = 25
85
C
0.005
0.5
A
Transceiver Power On Settling Time
I
S
50
s
Optoelectronic Characteristics
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Receiver
E
emin
=
15
_, SIR Mode, SC = LOW
20
35
2
Min Detection Threshold Irradiance
e
=
15
_, SIR Mode, SC = LOW,
V
CC1
= 2.7V
35
mW/m
2
Min Detection Threshold Irradiance
d
E
emin
=
15
_, SIR Mode, SC = HIGH
6
10
15
Max Detection Threshold Irradiance
d
E
emax
=
90
_, SIR Mode, V
CC1
= 5V
3.3
5
kW/m
2
Max Detection Threshold Irradiance
d
=
90
_, SIR Mode, V
CC1
= 3V
8
15
kW/m
2
Logic Low Receiver Input Irradiance
E
emax (low)
SC = HIGH or LOW
4
mW/m
2
Rxd Output Voltage
V
OL
Active, C = 15 pF, R = 2.2 k
0.5
0.8
V
Rxd Output Voltage
V
OH
Nonactive, C = 15 pF, R = 2.2 k
V
CC
0.5
Output Current
V
OL
< 0.8V
4
mA
Rise Time
t
r
C = 15 pF, R = 2.2 k
20
1400
ns
Fall Time
t
f
C = 15 pF, R = 2.2 k
20
200
ns
Rxd Pulse Width of Output Signal
P
w
115.2 kbit/s mode
1.41
8
s
Jitter
f
t
j
Over a period of 10 bit, 115.2 kbit/s
2
s
Latency
t
L
100
500
s
Notes
a.
T
amb
= 25
_C, V
CC
= 2.7 5.5 V unless otherwise noted.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
I
IRED
(peak) = 210 mA (At IRED Anode pin)
e.
BER = 10
8
(IrDA specification).
f.
Leading edge of output signal.
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pending--Rev. A, 03-Apr-98
5
Pre-Release Information
Optoelectronic Characteristics (Cont'd)
Parameter
Symbol
Test Conditions
a
Min
b
Typ
c
Max
b
Unit
Transmitter
IRED Operating Current
d
I
D
Current limiting resistor is series to
IRED: R
1
= 8.2
, V
CC2
= 5V
0.3
0.4
A
Logic Low Transmitter Input Voltage
V
IL
(T
xd
)
0
0.8
V
Logic High Transmitter Input Voltage
V
IH
(T
xd
)
2.4
V
CC1
+0.5
V
Output Radiant Intensity
e
I
eH
Current limiting resistor in series to
IRED: R
1
= 8.2
@ V
CC2
= 5V,
=
15
_
45
140
200
mW/sr
Output Radiant Intensity
I
eL
Logic Low Level
0.04
mW/sr
Angle of Half Intensity
24
_
Peak Wavelength of Emission
P
880
900
nm
Halfwidth of Emission Spectrum
60
nm
Optical Rise Time, Fall Time
t
R
, t
F
115.2 kHz square wave signal, duty
cycle 1:1
200
600
ns
Optical Overshoot
25
%
Rising Edge PeaktoPeak Jitter
t
j
Over a period of 10 bits, independent
of information content
0.2
s
Notes
a.
T
amb
= 25
_C, V
CC
= 2.7 5.5 V unless otherwise noted.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
IRED Operating Current can be adjusted by variation of R
1
e.
In agreement with IEC 825 eye safety limit
Recommended Circuit Diagram
The only required components for designing an IrDA 1.2
compatible design using TEMIC SIR transceivers are a
current limiting resistor to the IRED. However,
depending on the entire system design and board layout,
additional components may be required (see Figure 1).
It is recommended that the capacitors C1 and C2 are
positioned as near as possible to the transceiver power
supply pins, as in the proposed layout in Figure 1. A
tantalum capacitor should be used for C1, while a ceramic
capacitor should be used for C2 to suppress RF noise.
Also, when connecting the described circuit to the power
supply, low impedance wiring should be used.
R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED, the
value of the resistor should be reduced. Similarly, to
reduce the output power of the IRED, the value of the
resistor should be increased. For typical values of R1 see
Fig 2. For IrDA compliant operation, a current control
resistor of 812
is recommended. The upper drive
current limitation is dependent on the duty cycle and is
given by the absolute maximum ratings on the data sheet
and the eye safety limitations given by IEC8251.
IRED
Cathode
Rxd
V
CC1/
SD
GND
IRED
Anode
Txd
SC
NC
TFDx4x00
R1
C1
C2
R2
V
CC2
V
CC1/
SD
Rxd
Txd
GND
SC
Note: Outlined components are optional depending on quality of
power supply.
Figure 1. Recommended Application Circuit
R2, C1 and C2 are optional and dependent on the quality
of the supply voltage V
CC1
and injected noise. An