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Электронный компонент: TLMO2000

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TLMO / S / Y2000
Document Number 83185
Rev. 1.3, 21-Jan-05
Vishay Semiconductors
www.vishay.com
1
e3 Pb
Pb-free
19226
Low Current MiniLED
Description
The new low current MiniLED Series have been
designed in a small white SMT package. The feature
of the device is the very small package 2.3 mm x 1.3
mm x 1.4 mm and the low forward current. The Min-
LED is an obvious solution for small-scale, high-
power products that are expected to work reliability in
an arduous environment. This is often the case in
automotive and industrial application.
Features
SMD LEDs with exceptional brightness
Luminous intensity categorized
Compatible with automatic placement equipment
IR reflow soldering
Available in 8 mm tape
Low profile package
Non-diffused lens: Excellent for coupling to light
pipes and backlighting
Low power consumption
Luminous intensity ratio in one packing unit
I
Vmax
/I
Vmin
2.0, optional 1.6
Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
TLMS200. ,TLMO200. ,TLMY200.
Part
Color, Luminous Intensity
Angle of Half Intensity (
)
Technology
TLMS2000
Red, I
V
= 4.5 mcd (typ.)
60
AlInGaP on GaAs
TLMO2000
Orange, I
V
= 9.0 mcd (typ.)
60
AlInGaP on GaAs
TLMY2000
Yellow, I
V
= 7.1 mcd (typ.)
60
AlInGaP on GaAs
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V
R
5
V
DC Forward current
T
amb
100 C
I
F
15
mA
Surge forward current
t
p
10 s
I
FSM
0.1
A
Power dissipation
T
amb
100 C
P
V
40
mW
Junction temperature
T
j
125
C
Operating temperature range
T
amb
- 40 to + 100
C
www.vishay.com
2
Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Optical and Electrical Characteristics
T
amb
= 25 C, unless otherwise specified
Red
TLMS200.
1)
in one Packing Unit I
Vmax
/I
Vmin
2.0
Orange
TLMO200.
1)
in one Packing Unit I
Vmax
/I
Vmin
2.0
Yellow
TLMY200.
1)
in one Packing Unit I
Vmax
/I
Vmin
2.0
Storage temperature range
T
stg
- 40 to + 100
C
Soldering temperature
according to IPC 9501
T
sd
245
C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 5 mm
2
)
R
thJA
580
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Luminous intensity
1)
I
F
= 2 mA
I
V
2
4.5
mcd
Dominant wavelength
I
F
= 2 mA
d
630
nm
Peak wavelength
I
F
= 2 mA
p
643
nm
Angle of half intensity
I
F
= 2 mA
60
deg
Forward voltage
I
F
= 2 mA
V
F
1.8
2.2
V
Reverse voltage
I
R
= 10
A
V
R
5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
15
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Luminous intensity
1)
I
F
= 2 mA
I
V
4
9
mcd
Dominant wavelength
I
F
= 2 mA
d
598
605
611
nm
Peak wavelength
I
F
= 2 mA
p
610
nm
Angle of half intensity
I
F
= 2 mA
60
deg
Forward voltage
I
F
= 2 mA
V
F
1.8
2.2
V
Reverse voltage
I
R
= 10
A
V
R
5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
15
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Luminous intensity
1)
I
F
= 2 mA
I
V
3.2
7.1
mcd
Dominant wavelength
I
F
= 2 mA
d
581
588
594
nm
Peak wavelength
I
F
= 2 mA
p
590
nm
Angle of half intensity
I
F
= 2 mA
60
deg
Forward voltage
I
F
= 2 mA
V
F
1.8
2.2
V
Reverse voltage
I
R
= 10
A
V
R
5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
15
pF
Parameter
Test condition
Symbol
Value
Unit
TLMO / S / Y2000
Document Number 83185
Rev. 1.3, 21-Jan-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
0
20
40
60
80
100
T
amb
- Ambient Temperature (
C )
18556
P
-
Power
Dissipation
(mW)
V
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
18557
I
-
Forward
Current
(
m
A
)
F
T
amb
- Ambient Temperature (
C )
0
20
40
60
80
100
120
0.4
0.2
0
0.2
0.4
0.6
95 10319
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
I
-
Relative
Luminous
Intensity
Vr
e
l
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Intensity vs. Wavelength
Figure 6. Forward Current vs. Pulse Length
1
10
100
1.0
1.5
2.0
2.5
3.0
V
F
- Forward V oltage ( V )
17509
F
I
-
Forward
Current
(
m
A
)
Red
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
540 560 580 600 620 640 660 680 700
Wavelength ( nm )
18266
I
Relative

Luminous

Intensity
V
rel
Orange
Red
Yellow
10
100
1000
0.01
0.10
1.00
10.00
100.00
t
p
Pulse Duration ( ms )
17557
I
Forward

Current

(

A

)
F
t
p
/T= 0.01
0.05
0.2
0.5
1
0.02
0.1
www.vishay.com
4
Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
Figure 8. Forward Voltage vs. Ambient Temperature
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (
C )
18251
I
-
Relative
Luminous
Intensity
Vrel
Yellow
Orange
Red
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (
C )
18252
V
-
Forward
Voltage
Frel
Yellow
Orange
Red
TLMO / S / Y2000
Document Number 83185
Rev. 1.3, 21-Jan-05
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm
16892